EN 60749-18:2003

SLOVENSKI SIST EN 60749-18:2004

STANDARD
julij 2004
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing
radiation (total dose) (IEC 60749-18:2002)
ICS 31.080.01 Referenčna številka
©  Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno

EUROPEAN STANDARD EN 60749-18
NORME EUROPÉENNE
EUROPÄISCHE NORM February 2003

ICS 31.080.01
English version
Semiconductor devices –
Mechanical and climatic test methods
Part 18: Ionizing radiation (total dose)
(IEC 60749-18:2002)
Dispositifs à semiconducteurs –  Halbleiterbauelemente –
Méthodes d'essais mécaniques Mechanische und klimatische
et climatiques Prüfverfahren
Partie 18: Rayonnements ionisants Teil 18: Ionisierende Strahlung
(dose totale) (Gesamtdosis)
(CEI 60749-18:2002) (IEC 60749-18:2002)

This European Standard was approved by CENELEC on 2003-02-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta,
Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.

Ref. No. EN 60749-18:2003 E
Foreword
The text of document 47/1657/FDIS, future edition 1 of IEC 60749-18, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 60749-18 on 2003-02-01.

The following dates were fixed:

– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2003-11-01

– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2006-02-01
__________
Endorsement notice
The text of the International Standard IEC60749-18:2002 was approved by CENELEC as a European
Standard without any modification.
__________
NORME CEI
INTERNATIONALE IEC
60749-18
INTERNATIONAL
Première édition
STANDARD
First edition
2002-12
Dispositifs à semiconducteurs –
Méthodes d'essais mécaniques et climatiques –
Partie 18:
Rayonnements ionisants (dose totale)
Semiconductor devices –
Mechanical and climatic test methods –
Part 18:
Ionizing radiation (total dose)
© IEC 2002 Droits de reproduction réservés ⎯ Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
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Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch  Web: www.iec.ch
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Commission Electrotechnique Internationale PRICE CODE
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Pour prix, voir catalogue en vigueur
For price, see current catalogue

60749-18 © IEC:2002 – 3 –
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Terms and definitions . 7
3 Test apparatus.9
3.1 Radiation source. 9
3.2 Dosimetry system . 9
3.3 Electrical test instruments. 9
3.4 Test circuit board(s). 9
3.5 Cabling.11
3.6 Interconnect or switching system .11
3.7 Environmental chamber .11
4 Procedure.11
4.1 Sample selection and handling .11
4.2 Burn-in .13
4.3 Dosimetry measurements .13
4.4 Lead/aluminium (Pb/Al) container .13
4.5 Radiation level(s).13
4.6 Radiation dose rate .15
4.6.1 Condition A.15
4.6.2 Condition B.15
4.6.3 Condition C.15
4.7 Temperature requirements.15
4.8 Electrical performance measurements .15
4.9 Test conditions .17
4.9.1 In-flux testing.17
4.9.2 Remote testing.17
4.9.3 Bias and loading conditions .17
4.10 Post-irradiation procedure .17
4.11 Extended room temperature anneal test .19
4.11.1 Need to perform an extended room temperature anneal test .19
4.11.2 Extended room temperature anneal test procedure .19
4.12 MOS accelerated annealing test .21
4.12.1 Need to perform accelerated annealing test .21
4.12.2 Accelerated annealing test procedure .23
4.13 Test report.23
5 Summary .25

60749-18 © IEC:2002 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 18: Ionizing radiation (total dose)
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-18 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1657/FDIS 47/1666/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until
2007. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
60749-18 © IEC:2002 – 7 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 18: Ionizing radiation (total dose)
1 Scope
This part of IEC 60749 provides a test procedure for defining requirements for testing
packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing
radiation (total dose) effects from a cobalt-60 ( Co) gamma ray source.
This standard provides an accelerated annealing test for estimating low dose rate ionizing
radiation effects on devices. This annealing test is important for low dose rate or certain other
applications in which devices may exhibit significant time-dependent effects.
This standard addresses only steady-state irradiations, and is not applicable to pulse type
irradiations.
It is intended for military- and space-related applications.
This standard may produce severe degradation of the electrical properties of irradiated
devices and thus should be considered a destructive test.
2 Terms and definitions
For the purposes of this part of IEC 60749, the following terms and definitions apply.
2.1
ionizing radiation effects
changes in the electrical parameters of a device or integrated circuit resulting from radiation-
induced charge
NOTE These are also referred to as total dose effects.
2.2
in-flux test
electrical measurements made on devices during irradiation exposure
2.3
non in-flux test
electrical measurements made on devices at any time other than during irradiation
2.4
remote tests
electrical measurements made on devices that are physically removed from the radiation
location
60749-18 © IEC:2002 – 9 –
2.5
time-dependent effects
significant degradation in electrical parameters caused by the growth or annealing or both of
radiation-induced trapped charge after irradiation
NOTE Similar effects also take place during irradiation.
2.6
accelerated annealing test
procedure utilizing elevated temperature to accelerate time-dependent effects
3 Test apparatus
The apparatus shall consist of the radiation source, electrical test instrumentation, test circuit
board(s), cabling, interconnect board or switching system, an appropriate dosimetry
measurement system, and an environmental chamber (if required for time-dependent effects
measurements). Adequate precautions shall be observed to obtain an electrical measurement
system with sufficient insulation, ample shielding, satisfactory grounding, and suitable low
noise characteristics.
3.1 Radiation source
The radiation source used in the test shall be the uniform field of a Co gamma ray source.
Uniformity of the radiation field in the volume where devices are irradiated shall be within
±10 % as measured by the dosimetry system, unless otherwise specified. The intensity of the
gamma ray field of the Co source shall be known with an uncertainty of no more than ±5 %.
Field uniformity and intensity can be affected by changes in the location of the device with
respect to the radiation source and
...