EN 60747-15:2004

SLOVENSKI SIST EN 60747-15:2004

STANDARD
november 2004
Diskretni polprevodniki - 15. del: Izolirani močnostni polprevodniki (IEC 60747-
15:2003)
Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
(IEC 60747-15:2003)
ICS 31.080.01 Referenčna številka
©  Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno

EUROPEAN STANDARD EN 60747-15
NORME EUROPÉENNE
EUROPÄISCHE NORM January 2004

ICS 31.080.99
English version
Discrete semiconductor devices
Part 15: Isolated power semiconductor devices
(IEC 60747-15:2003)
Dispositifs à semiconducteurs Einzel-Halbleiterbauelemente
Partie 15: Dispositifs à semiconducteurs Teil 15: Isolierte Leistungshalbleiter
de puissance isolés (IEC 60747-15:2003)
(CEI 60747-15:2003)
This European Standard was approved by CENELEC on 2003-11-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania,
Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden, Switzerland
and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2004 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.

Ref. No. EN 60747-15:2004 E
Foreword
The text of the International Standard CEI 60747-15:2003, prepared by SC 47E, Discrete
semiconductor devices, of CEI TC 47, Semiconductor devices, was submitted to the Unique
Acceptance Procedure and was approved by CENELEC as EN 60747-15 on 2003-11-01 without any
modification.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2004-11-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2006-11-01
__________
Endorsement notice
The text of the International Standard CEI 60747-15:2003 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 60068-1 NOTE Harmonized as EN 60068-1:1994 (not modified).
IEC 60068-2-1 NOTE Harmonized as EN 60068-2-1:1993 (not modified).
IEC 60068-2-2 NOTE Harmonized as EN 60068-2-2:1993 (not modified).
IEC 60068-2-58 NOTE Harmonized as EN 60068-2-58:1999 (not modified).
IEC 60068-2-78 NOTE Harmonized as EN 60068-2-78:2001 (not modified).
IEC 60112 NOTE Harmonized as EN 60112:2003 (not modified).
IEC 60146-1-1 NOTE Harmonized as EN 60146-1-1:1993 (not modified).
IEC 60146-2 NOTE Harmonized as EN 60146-2:2000 (not modified).
IEC 60664-3 NOTE Harmonized as HD 625.3 S1:1997 (not modified).
IEC 60747-5-1 NOTE Harmonized as EN 60747-5-1:2001 (not modified).
IEC 60747-5-2 NOTE Harmonized as EN 60747-5-2:2001 (not modified).
IEC 60747-5-3 NOTE Harmonized as EN 60747-5-3:2001 (not modified).
IEC 60749-1 NOTE Harmonized as EN 60749-1:2003 (not modified).
IEC 60749-2 NOTE Harmonized as EN 60749-2:2002 (not modified).
IEC 60749-3 NOTE Harmonized as EN 60749-3:2002 (not modified).
IEC 60749-4 NOTE Harmonized as EN 60749-4:2002 (not modified).
IEC 60749-7 NOTE Harmonized as EN 60749-7:2002 (not modified).
IEC 60749-9 NOTE Harmonized as EN 60749-9:2002 (not modified).
IEC 60749-11 NOTE Harmonized as EN 60749-11:2002 (not modified).

- 3 - EN 60747-15:2004
IEC 60749-13 NOTE Harmonized as EN 60749-13:2002 (not modified).
IEC 60749-16 NOTE Harmonized as EN 60749-16:2003 (not modified).
IEC 60749-17 NOTE Harmonized as EN 60749-17:2003 (not modified).
IEC 60749-18 NOTE Harmonized as EN 60749-18:2003 (not modified).
IEC 60749-19 NOTE Harmonized as EN 60749-19:2003 (not modified).
IEC 60749-29 NOTE Harmonized as EN 60749-29:2003 (not modified).
IEC 60947-4-2 NOTE Harmonized as EN 60947-4-2:2000 (not modified).
IEC 60947-4-3 NOTE Harmonized as EN 60947-4-3:2000 (not modified).
IEC 60950-1 NOTE Harmonized as EN 60950-1:2001 (modified).
IEC 61000 NOTE Harmonized in EN 61000 series (not modified).
IEC 61340-5-1 NOTE Harmonized as EN 61340-5-1:2001 (not modified).
IEC 61800-1 NOTE Harmonized as EN 61800-1:1998 (not modified).
IEC 61800-2 NOTE Harmonized as EN 61800-2:1998 (not modified).
_____
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
This European Standard incorporates by dated or undated reference, provisions from other
publications. These normative references are cited at the appropriate places in the text and the
publications are listed hereafter. For dated references, subsequent amendments to or revisions of any
of these publications apply to this European Standard only when incorporated in it by amendment or
revision. For undated references the latest edition of the publication referred to applies (including
amendments).
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
1) 2)
IEC 60068-2-6 - Environmental testing EN 60068-2-6 1995
Part 2-6: Tests - Test Fc: Vibration
(sinusoidal)
1) 2)
IEC 60068-2-7 - Part 2-7: Tests - Test Ga and guidance: EN 60068-2-7 1993
Acceleration, steady state
1) 2)
IEC 60068-2-14 - Part 2-14: Tests - Test N: Change of EN 60068-2-14 1999
temperature
1) 2)
IEC 60068-2-20 - Part 2-20: Tests - Test T: Soldering HD 323.2.20 S3 1988

1) 2)
IEC 60068-2-27 - Part 2-27: Tests - Test Ea and EN 60068-2-27 1993
guidance: Shock
1) 2)
IEC 60068-2-47 - Part 2-47: Test methods - Mounting of EN 60068-2-47 1999
components, equipment and other
articles for vibration, impact and similar
dynamic tests
1) 2)
IEC 60068-2-48 - Part 2-48: Tests - Guidance on the EN 60068-2-48 1999
application of the tests of IEC 60068 to
simulate the effects of storage

1) 2)
IEC 60068-3-4 - Part 3-4: Supporting documentation and EN 60068-3-4 2002
guidance - Damp heat tests
IEC 60191-4 1999 Mechanical standardization of EN 60191-4 1999
semiconductor devices
Part 4: Coding system and classification
into forms of package outlines for
semiconductor device packages
IEC 60270 2000 High-voltage test techniques - Partial EN 60270 2001
discharge measurements
1)
Undated reference.
2)
Valid edition at date of issue.

- 5 - EN 60747-15:2004
Publication Year Title EN/HD Year
1)
IEC 60319 - Presentation and specification of - -
reliability data for electronic components

3)
IEC 60664-1 1992 Insulation coordination for equipment EN 60664-1 2003
within low-voltage systems
Part 1: Principles, requirements and
tests
IEC 60721-3-3 1994 Classification of environmental EN 60721-3-3 1995
conditions
Part 3-3: Classification of groups of
environmental parameters and their
severities - Stationary use at
weatherprotected locations
IEC 60747-1 1983 Semiconductor devices - Discrete - -
devices and integrated circuits –
Part 1: General
A1 1991 - -
A3 1996 - -
IEC 60747-2 2000 Part 2: Rectifier diodes - -

IEC 60747-6 2000 Part 6: Thyristors - -

IEC 60747-7 2000 Part 7: Bipolar transistors - -

IEC 60747-8 2000 Part 8: Field-effect transistors - -

IEC 60747-9 1998 Part 9: Insulated-gate bipolar transistors - -
(IGBTs)
1) 2)
IEC 60749-5 - Semiconductor devices - Mechanical EN 60749-5 2003
and climatic test methods
Part 5: Steady-state temperature
humidity bias life test
1) 2)
IEC 60749-6 - Part 6: Storage at high temperature EN 60749-6 2002

1) 2)
IEC 60749-10 - Part 10: Mechanical shock EN 60749-10 2002

1) 2)
IEC 60749-12 - Part 12: Vibration, variable frequency EN 60749-12 2002

1) 2)
IEC 60749-14 - Part 14: Robustness of terminations EN 60749-14 2003
(lead integrity)
1) 2)
IEC 60749-15 - Part 15: Resistance to soldering EN 60749-15 2003
temperature for through-hole mounted
devices
4)
IEC 60749-21 - Part 21: Solderability - -

1) 2)
IEC 60749-25 - Part 25: Temperature cycling EN 60749-25 2003

3)
EN 60664-1 includes A1:2000 + A2:2002 to IEC 60664-1.
4)
At draft stage.
Publication Year Title EN/HD Year
1)
IEC 60749-26 - Part 26: Electrostatic discharge (ESD) - -
sensitivity testing - Human body model
(HBM)
1) 2)
IEC 60749-36 - Part 36: Acceleration, steady state EN 60749-36 2003

IEC 61287-1 1995 Power convertors installed on board - -
rolling stock
Part 1: Characteristics and test methods

ISO 1302 2002 Geometrical Product Specifications EN ISO 1302 2002
(GPS) - Indication of surface texture in
technical product documentation

ISO 2768-2 1989 General tolerances EN 22768-2 1993
Part 2: Geometrical tolerances for
features without individual tolerance
indications
INTERNATIONAL IEC
STANDARD
60747-15
First edition
2003-06
Discrete semiconductor devices –
Part 15:
Isolated power semiconductor devices
Dispositifs à semiconducteurs –
Partie 15:
Dispositifs à semiconducteurs de puissance isolés
 IEC 2003  Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch  Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale
X
International Electrotechnical Commission
Международная Электротехническая Комиссия
For price, see current catalogue

– 2 – 60747-15  IEC:2003(E)
CONTENTS
FOREWORD . 4
1 Scope . 5
2 Normative references. 5
3 Terms and definitions . 7
4 Letter symbols .12
4.1 General .12
4.2 Additional subscripts/symbols .12
4.3 List letter symbols.12
5 Essential ratings (limiting values) and characteristics .13
5.1 General .13
5.2 Ratings (limiting values) .13
5.3 Characteristics.16
6 Verification of ratings (limiting values) .24
6.1 Isolation voltage between terminals and base plate (V ) .24
isol
6.2 Peak case non-rupture current.26
6.3 Maximum terminal current (I ) .26
tRMS
6.4 Surge (non-repetitive) current test (I ; I ).26
FSM TSM
7 Methods of measurement of characteristics .26
7.1 Rated partial discharge inception and extinction voltages (V ) (V ) .26
i e
7.2 Parasitic stray inductance between main terminals (L ) .27
P
7.3 Parasitic stray capacitance of functional circuit elements to case (C ) .30
P
7.4 Measuring methods for thermal characteristics .31
7.5 Measuring methods of mechanical characteristics .32
8 Acceptance and reliability .33
8.1 General requirements .33
8.2 List of endurance tests .33
8.3 Type tests and routine tests of isolated power devices .36
Annex A (informative) Test method for peak case non-rupture current.38
Annex B (informative) Measuring method of the thickness of thermal compound paste.41
Annex C (informative) Climatic parameters and characteristics .42
Annex D (informative) Internal circuit configurations.43
Bibliography.44
Figure 1 – Explanation of parasitic inductance L .18
P
Figure 2 – Examples for distributed parasitic stray inductances L .18
P
Figure 3a – Example of a cross-section of an isolated power device mounted on a heat
sink, with the temperatures T ,… T .20
vj a
Figure 3b – Model of thermal resistances of circuit elements R , R , R ,
th(j-c) th(c-s) th(s-a)
resp. Z , Z and Z , schematically .20
th(j-c) th(j-s) th(j-a)
Figure 4 – Reference points for measuring the temperatures T , T , T , T T to be
vj c cI cD s
specified for an isolated power device, seen from above .22

60747-15  IEC:2003(E) – 3 –
Figure 5 – Transient thermal impedance Z = f(t ) of an isolated power
th(j-c) p
semiconductor device as a function of the pulse duration time t , elapsed after a step
p
change of applied power dissipation.23
Figure 6 – Basic circuit diagram for isolation breakdown withstand voltage test (“high
pot test”) with V .24
isol
Figure 7 – Isolation levels of an isolated power device with integrated driver and
protection functions.25
Figure 8a – Circuit diagram for measurement of parasitic stray inductances (L ).28
P
Figure 8b – Wave forms .29
Figure 9 – Circuit for the measurement of parasitic stray capacitance C of
p
the functional circuit elements to base plate (ground).30
Figure 10 – Example for reference points for the measurement of T and T for the
cref sref
thermal resistance of an isolated power semiconductor devices (dual-switch, 62 mm wide).32
Figure 11 – Power cycling (load) capability N versus temperature rise of the junction
f;p
temperature T per load pulse .34
vj
Figure A.1 – Circuit diagram for test of peak case non-rupture current I .38
CNR
Figure B.1– Example of a measuring gauge for a layer of thermal compound paste of a
thickness between 5 µm and 150 µm.41
Figure D.1 – Converter circuits containing diodes and/or thyristors .43
Figure D.2 – Inverter circuits containing diodes and/or transistors shown as IGBT .44
Table 1 – Environmental testing .35
Table 2 – Minimum type and routine tests for isolated power semiconductor devices .36
Table C.1 – Classification of climatic environmental conditions, e.g. Class 3K3 and 3K4
(extract, not complete) .42

– 4 – 60747-15  IEC:2003(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
DISCRETE SEMICONDUCTOR DEVICES –
Part 15: Isolated power semiconductor devices
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-15 has been prepared by subcommittee 47E, Discrete
semiconductor devices of IEC technical committee 47: Semiconductor devices
The text of this standard is based on the following documents:
FDIS Report on voting
47E/236/FDIS 47E/238/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until 2006.
At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
60747-15  IEC:2003(E) – 5 –
DISCRETE SEMICONDUCTOR DEVICES –
Part 15: Isolated power semiconductor devices
1 Scope
This part of IEC 60747 gives the product specific standards, requirements and test methods
for isolated power semiconductor devices. These requirements are added to those given in
other parts of IEC 60747, IEC 60748 and IEC 60749 for the corresponding non-isolated power
devices.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60068-2-6, Environmental testing – Part 2-6: Tests – Test Fc: Vibration (sinusoidal)
IEC 60068-2-7, Environmental testing – Part 2-7: Tests – Test Ga and guidance: Acceleration,
steady state
IEC 60068-2-14, Environmental testing – Part 2-14: Tests – Test N: Change of temperature
IEC 60068-2-20, Environmental testing – Part 2-20: Tests – Test T: Soldering
IEC 60068-2-27, Environmental testing – Part 2-27: Tests – Test Ea and guidance: Shock
IEC 60068-2-47, Environmental testing – Part 2-47: Test methods – Mounting of components,
equipment and other articles for vibration, impact and other similar dynamic tests
IEC 60068-2-48, Environmental testing – Part 2-48: Test methods – Guidance on the appli-
cation of the tests of IEC 60068 to simulate the effects of storage
IEC 60068-3-4: Environmental testing – Part 3-4: Supporting documentation and guidance –
Damp heat tests
IEC 60191-4:1999, Mechanical standardization of semiconductor devices – Part 4: Coding
system and classification into forms of package outlines for semiconductor device packages
IEC 60270:2000, High voltage test techniques – Partial discharge measurements
IEC 60319, Presentation and specification of reliability data for electronic components
IEC 60664-1:1992, Insulation coordination for equipment within low-voltage systems –
Principles, requirements and tests
IEC 60721-3-3:1994, Classification of environmental conditions – Part 3-3: Classification
of groups of environmental parameters and their severities – Stationary use at weather-
protected locations
– 6 – 60747-15  IEC:2003(E)
IEC 60747-1:1983, Semiconductor devices – Discrete devices and integrated circuits –
Part 1: General
Amendment 1 (1991)
Amendment 3 (1996)
IEC 60747-2:2000, Semiconductor devices – Discrete devices and integrated circuits – Part 2:
Rectifier diodes
IEC 60747-6:2000, Semiconductor devices – Part 6: Thyristors
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-8:2000, Semiconductor devices – Part 8: Field effect transistors
IEC 60747-9:1998, Semiconductor devices – Discrete devices – Part 9: Insulated-gate bipolar
transistors (IGBTs)
IEC 60749-5: Semiconductor devices – Mechanical and climatic test methods – Part 5:
Steady-state temperature humidity bias life test
IEC 60749-6: Semiconductor devices – Mechanical and climatic test methods – Part 6:
Storage at high temperature
IEC 60749-10: Semiconductor devices – Mechanical and climatic test methods – Part 10:
Mechanical shock
IEC 60749-12: Semiconductor devices – Mechanical and climatic test methods – Part 12:
Vibration, variable frequency
IEC 60749-14: Semiconductor devices – Mechanical and climatic test methods – Part 14:
Robustness of terminations (lead integrity)
IEC 60749-15: Semiconductor devices – Mechanical and climatic test methods – Part 15:
Resistance to soldering temperature for through-hole mounted devices
IEC 60749-21: Semiconductor devices – Mechanical and climatic test methods – Part 21:
Solderability
IEC 60749-25: Semiconductor devices – Mechanical and climatic test methods – Part 25:
Rapid change of temperature (air, air)
IEC 60749-26: Semiconductor devices – Mechanical and climatic test methods – Part 26:
Rapid change of temperature (air, air)
IEC 60749-36: Semiconductor devices – Mechanical and climatic test methods – Part 36:
Acceleration, steady-state
IEC 61287-1:1995, Power convertors installed on board rolling stock – Part 1: Characteristics
and test methods
ISO 1302:2002, Geometrical Product Specifications (GPS) – Indication of surface texture
in technical product documentation
ISO 2768-2:1989, General tolerances – Part 2: Geometrical tolerances for features without
individual tolerance indications
———————
In preparation.
A new edition is being prepared.

60747-15  IEC:2003(E) – 7 –
3 Terms and definitions
For the purposes of this part of IEC 60747, the following definitions apply.
3.1
isolated power semiconductor device
semiconductor device that contains an integral electrical insulator between cooling surface or
base plate (envelope) and any isolated circuit elements
NOTE 1 Included are solid-state relays (SSRs) incorporating opto-isolated driving units (see IEC 60747-5-1,
IEC 60745-5-2 and IEC 60745-5-3), monolithically integrated ICs with power stages and isolated cooling surface,
i.e. intelligent power devices and isolated discrete plastic encapsulated packages that have an isolated cooling
surface.
NOTE 2 The surface of the package transferring the heat to a heat sink or ambient is referred to as “base plate”.
The surface of the package not transferring the heat is referred to as “envelope”.
3.2
constituent parts of the isolated power semiconductor device
3.2.1
circuit element
any constituent part of a circuit that contributes directly to its operation and performs a
definable function
NOTE Examples include rectifier diodes, thyristors, bipolar transistors, MOSFETs, IGBTs affixed on metallized
isolator substrates and integrated driver and protection circuits.
3.2.2
interconnection
internal connection between circuit elements and between circuit elements and terminals (see
subclause 3.7.2 of IEC 60747-1)
NOTE They are considered to be parts of their associated circuit elements.
3.2.3
base plate
metallic or metallized cooling surface part of the package that transfers the heat from inside to
a heat sink outside
3.2.4
terminals
externally available points of connection, isolated from base plate
3.2.4.1
main terminals
terminals having the high potential of the power circuit and carrying the main current
3.2.4.2
control terminals
terminals having only low current capability for the purpose of control function to which the
external control signals are applied or from which sensing parameters are taken
3.2.4.3
high-voltage control terminals
terminals having the high potential of the power circuit, but carrying only low current for
control function
NOTE Examples include current shunts and collector sense terminals having the high potential of the main
terminals.
– 8 – 60747-15  IEC:2003(E)
3.2.4.4
low-voltage control terminals
terminals at a low potential against base plate having a control function, and isolated from the
“main terminals” as well as from high voltage control terminals
NOTE Examples include the terminals of isolated temperature sensors and isolated gate driver inputs, etc.
3.3
classification of categories of isolated power devices
isolated power semiconductor devices are classified as follows:
3.3.1
chip content: types according to their main functional circuit elements
3.3.1.1
thyristor module
isolated power semiconductor device containing thyristor chips
3.3.1.2
diode module
isolated power semiconductor device containing diode chips
3.3.1.3
bipolar transistor module
isolated power semiconductor device containing bipolar transistor chips and their inverse
diode chips
3.3.1.4
IGBT module
isolated power semiconductor device containing isolated gate bipolar transistor (IGBT) chips
and their inverse diode chips
3.3.1.5
MOSFET module
isolated power semiconductor device containing MOSFET chips
3.3.2
circuit configuration: types according to their main functional circuit
3.3.2.1
single switch
one functional circuit element, the “semiconductor switch”, in one case (as the most simple
functional device) (see Annex D, Figure D.2a)
NOTE 1 Examples include epoxy isolated discrete semiconductors with metallic cooling surface.
NOTE 2 “Switch” is here a commonly used synonym for “functional circuit elements”.
3.3.2.2
dual switch
two switches in one case, series connected, forming a “half bridge” circuit, a phase leg
of a single-phase bridge or three-phase bridge circuit arrangement (see Annex D,
Figure D.2b)
NOTE Examples include “brake chopper” circuit with a high side switch or a low side switch and the freewheeling
diode on the other position, see Annex D, Figure D.2c and D.2d.
3.3.2.3
H – bridge
four switches in one case, two half bridges forming a “full bridge”, a single-phase bridge (see
Annex D, Figure D.2e)
60747-15  IEC:2003(E) – 9 –
3.3.2.4
sixpack
six switches in one case, three half bridges forming a “three-phase bridge” (see Annex D,
Figure D.2f)
3.3.2.5
sevenpack
seven switches in one case, three half bridges forming a three-phase bridge circuit and in
addition a brake chopper circuit (see Annex D, Figures D.2g and D.2h)
NOTE Above circuit configurations are mainly used for transistor inverter circuits producing a.c. output of fixed or
variable frequency from d.c. input voltage, using pulse width modulation (PWM), see Annex D, Figure D.2i (CIB-
converter-inverter-brake chopper devices).
3.3.2.6
bridge rectifier
single-phase bridge converter circuit of 4 diodes in one case (see Annex D, Figure D.1: circuit
B2U, two pulse bridge uncontrolled)
3.3.2.7
half controlled bridge rectifier
single-phase bridge converter circuit of 2 diodes and 2 thyristors in one case (see Annex D,
Figure D.1: B2HK)
3.3.2.8
fully controlled bridge rectifier
single-phase bridge converter circuit of 4 thyristors in one case (see Annex D, Figure D.1:
B2C, two pulse bridge controlled)
3.3.2.9
three phase bridge rectifier
three-phase bridge converter circuit of 6 diodes in one case (see Annex D, Figure D.1: B6U,
six pulse bridge uncontrolled)
3.3.2.10
half controlled three phase bridge rectifier
three-phase bridge converter circuit of 3 diodes and 3 thyristors in one case (see Annex D,
Figure D.1: B6HK)
3.3.2.11
fully controlled three phase rectifier
three-phase bridge converter circuit of 6 thyristors in one case (see Annex D, Figure D.1:
B6C, six pulse bridge controlled)
3.3.2.12
a.c. controller
single-phase (or three-phase) proportional controller of two (or six) inverse-parallel connected
thyristors producing a proportional a.c. output voltage from a.c. input voltage using phase
angle control (see Annex D, Figure D.1: W1C or W3C)
NOTE 1 Above rectifier (or respectively controller) circuits are mainly used as input converters producing a fixed
or – if thyristor controlled – proportional d.c. (or respectively a.c.) output voltage from a.c. input voltage, using
phase-angle control. (See also JESD 14.)
NOTE 2 IEC 60971 provides details. Examples include circuits designated “B2U”,…. “B6C”,…… “W1C”, “W3C”.
3.3.3
other circuit configurations and combinations
for other circuit configurations and combinations for the above circuits, see Annex D.

– 10 – 60747-15  IEC:2003(E)
3.4
functionality: types according to additional functions
such as for measurement, protection and control, including SSRs:
circuits as in 3.2.3, but with enhanced functionality by:
• current shunts or sensors
• temperature sensors
• overcurrent or overvoltage protection
• driver with or without integrated power supply
• further control circuitry
• opto-coupler and auxiliary circuits
• other functions
NOTE Such devices are called intelligent power modules (IPM) on the market. IPM and SMART power devices
are specific names of such specific products.
3.5
solid-state relays
SSRs
isolated power semiconductor devices that incorporate an opto-isolated electronic driving unit
using an input section, fully isolated from the power output side and the metallic or metallized
isolated cooling surface or base plate, performing a switch-on/switch-off function as an
electronic relay producing a non-proportional output
NOTE For SSRs, IEC 60747-5-1, IEC 60747-5-2 and IEC 60747-5-3 also apply.
3.6
isolation voltage
V
isol
isolation breakdown withstand voltage between terminals and base plate (or external heat
sink) over a specified time
NOTE Subclause 1.3.9.1 of IEC 60664-1 defines ‘rated insulation voltage’ as r.m.s. withstand voltage value
assigned by the manufacturer to the equipment or to a part of it, characterizing the specified isolation voltage
withstand capability of its insulation.
3.7
partial discharge inception voltage
V
i
voltage between main terminals and base plate at which partial discharges occur when
the applied voltage is gradually increased from a lower value
NOTE 1 IEC 60270 defines inception voltage as greater than the extinction voltage.
NOTE 2 Subclause 1.3.18.4 of IEC 60664-1 defines ‘partial discharge inception voltage’, U , as the lowest peak
i
value of the test voltage at which the apparent charge becomes greater than the specified discharge magnitude
when the test voltage is increased above a low value for which no discharge occurs.
3.8
partial discharge extinction voltage
V
e
voltage between main terminals and base plate at which partial discharges disappear when
the applied voltage is gradually decreased from a higher value
NOTE 1 IEC 60270 defines the extinction voltage as lower than the inception voltage.
NOTE 2 Subclause 1.3.18.5 of IEC 60664-1 defines ‘partial discharge extinction voltage’, U , as the lowest peak
e
value of the test voltage at which the apparent charge becomes less than the specified discharge magnitude when
the test voltage is reduced below a high level where such discharges have occurred.

60747-15  IEC:2003(E) – 11 –
3.9
creepage distance along surface
d
s
shortest distance along the surface of the insulating material between two conductive parts at
different potentials
NOTE See subclause 1.3.3 of IEC 60664-1 (IEV 151-15-50).
3.10
clearance distance in air
d
a
shortest distance in air between two conductive parts at different potentials
NOTE See 1.3.2 of IEC 60664-1.
3.11
peak case non-rupture current
peak current that will not lead to a rupture of the package, ejecting plasma and massive
particles under specified conditions
NOTE The value indicated depends on the type of the device, e.g. thyristor, diode, IGBT, and the packaging
technology, e.g. whether wire bonded.
3.11.1
peak case non-rupture current for diodes and thyristors
I
RSMC
peak reverse current of a half sine wave, when the device has lost its reverse blocking
capability, that should not be exceeded in order to avoid bursting of the case or emission of
a plasma beam or massive particles under specified conditions
NOTE Specified in IEC 60747-2 for diode devices, respectively IEC 60747-6 for thyristor devices.
3.11.2
peak case non-rupture current for bipolar transistors, IGBT and MOSFETs
I
CNR
peak collector current that should not be exceeded in order to avoid bursting of the case or
emission of a plasma beam or ejection of massive particles under specified conditions
3.12
parasitic stray inductance between main terminals
L
P
inner wiring stray inductance, effective in the main current path between the main terminals
NOTE 1 L of a half-bridge module (dual switch) is the effective parasitic stray inductance L between the power
P CE
terminal (+) (top collector) and power terminal (–) (bottom emitter).
NOTE 2 Parasitic stray inductance L will cause a voltage spike at switch-off (above the continuous d.c. voltage
P
V ) on chip level, higher than the voltage, measured between the terminals.
CC
3.13
parasitic stray capacitance between switching circuit elements and case
C
P
coupling capacitance between all terminals connected together and the base plate (or heat-
sink surface)
NOTE This capacitance can serve as a bypass for parasitic high frequency currents that can cause electro-
magnetic interference (EMI).
3.14
power cycling (load) capability
N
f;p
number of power cycles N until failure of the cumulative percentage p (=percentile) of
f;p
a device population
NOTE Subclause 7.4.6 of IEC 60747-2 (diodes) and 9.4.6 of IEC 60747-6 (thyristors) define “power cycling load
test”. Subclause 10.1.3.3 of Amendment 1 to IEC 60747-9 (IGBT) defines “intermittent operating life tests”.

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4 Letter symbols
4.1 General
IEC 60747-1 applies.
4.2 Additional subscripts/symbols
p = parasitic
ref = reference point (for measuring temperatures)
s = heat sink (subscript of heat-sink temperature T )
s
t = time (parameter) used for currents, voltages as function of time: in brackets: (t)
t = terminal (subscript of mounting torque to terminal M )
t
1 = primary side (of a transformer or control input)
2 = secondary side (power output side)
4.3 List letter symbols
4.3.1 Voltages and currents (see also IEC 60747-1)
I
Terminal current
tRMS
V
Isolation voltage
isol
V
Partial discharge inception voltage
i
V
Partial discharge extinction voltage
e
I
Isolation leakage current
isol
I
Peak case non-rupture current (for diode and thyristor devices)
RSMC
I
Peak case non-rupture current (for IGBT and MOSFET devices)
CNR
4.3.2 Mechanical terms
M
Mounting torque for screws to heat sink s see Note 1
M
t
Mounting torque for terminal screws see Note 1
F
Mounting force for pressure mounted devices
a
Maximum acceleration in all 3 axis (x, y, z)
m
Mass
e
c
Flatness of the case (base-plate, cooling surface) see Note 2
e
Flatness of the cooling surface (heat sink) s
R
Zc
Roughness of the case (base plate) see Note 3
R
Roughness of the cooling surface (heat sink) Zs see Note 3
D
(c-s)
Thickness of thermal compound grease (case – sink) see Annex B
NOTE 1 Under given mounting instructions. In respect of thermal compound properties see mounting instructions.
NOTE 2 See for instance IEC 60191-2:1995, outline 191-IEC-080B (34 mm wide module) and 191-IEC-081B
(62 mm wide module) deviation from flatness 100 µm – see Note 4.
NOTE 3 In USA: “R ” is used instead, (R = about 3*R ). There is no fixed factor between those two.
a z a
NOTE 4 Example: Seating plane. Deviation from flatness shall be <20 µm concave and <100 µm convex, the
roughness <10 µm. Flatness and roughness are to be specified as, for instance, defined in the related publication
IEC 60191-2.
60747-15  IEC:2003(E) – 13 –
4.3.3 Other terms
P
Total max. power dissipation per functional circuit element at T = 25 °C tot
c
L
Parasitic inductance, effective between terminals x and y or between terminals and Pxy
chips (to be specified)
C
Parasitic capacitance between all terminals connected together and cooling P
surface (case, base plate, ground)
R
Ohmic lead resistance between terminal x and related functional circuit element x’ xx’
T
Terminal temperature t
T
Sensor temperature sen
T
Significant temperature of the temperature sensor No.1 (to be specified) sen1
T
Significant case temperature at the reference point (to be specified) cref
N
Number of power load cycles until failure of a percentage p of a population of f;p
devices
5 Essential ratings (limiting values) and characteristics
5.1 General
Isolated power semiconductor devices should be specified as case rated or heat-sink rated
devices.
NOTE Actual values regarding isolation voltage, partial discharge voltage, creepage and clearance distance are
not described in this standard. The values shall be based on each standard, which will be applied to any equipment
using the isolated power semiconductor devices.
5.1.1 Temperatures
The ratings and characteristics should be quoted at a temperature of 25 °C or another
specified elevated temperature chosen from Amendment 3 (1996) to IEC 60747-1.
NOTE T = –40 °C is specified in IEC 60749-25.
stg
5.1.2 Climatic characteristics
Limiting values of environmental parameters for the final application are as follows:
• ambient temperature;
• humidity;
• speed and pressure of air;
• irradiation by sun and other heat sources;
• mechanical active substances;
• chemically active substances;
• biological issues.
These shall be described by class, as specified in Table 1 and Annex C of IEC 60721-3-3.
5.2 Ratings (limiting values)
Unless otherwise stated, all limiting ratings apply at a temperature of 25 °C or another
elevated temperature specified from the list in IEC 60747-1. The following ratings shall be
valid for the whole range of operating conditions as stated for the particular device.

– 14 – 60747-15  IEC:2003(E)
5.2.1 Isolation voltage, V
isol
Maximum r.m.s. or d.c. value between the isolated terminals and the base plate, applied
between the high potential terminals, all connected with each other, and the ground potential
of the base plate (or heat sink underneath) for a specified time at the final test procedure of
the device and of the final equipment to assure the capability to isolate the electrical system
from ground potential.
NOTE 1 Details for the dielectric isolation voltage test for solid insulation shall be secured following 2.2.2.2,
4.1.2, 4.1.2.1 and 4.1.2.3.1 of IEC 60664-1 (for low voltage equipment), respectively IEC 61287 (for rolling stock)
depending on the overvoltage category (application), the applied maximum working voltage, etc.
NOTE 2 Specified values are under discussion. The future IEC 62103 (=EN 50178) proposes reduced isolation
voltages in comparison to before.
5.2.2 Peak case non-rupture current (where appropriate)
Maximum surge current that does not cause the bursting of the case or emission of plasma
and particles.
5.2.2.1 Peak case non-rupture current (I ) of isolated diode and thyristor modules
RSMC
Maximum peak reverse current of a half sine wave (e.g. 10 ms), when the device has lost its
reverse blocking capability, that should not be exceeded in order to avoid bursting of the case
or emission of a plasma beam or massive particles.
NOTE Specified in IEC 60747-2 for diode devices and in IEC 60747-6 for thyristors devices.
5.2.2.2 Peak case non-rupture current (I ) of bipolar transistors, IGBTs and
CNR
MOSFETs modules
Maximum peak collector current during a short-circuit that should not be exceeded in order to
avoid bursting of the case or emission of a plasma beam or ejection of massive particles
under specified conditions, i.e. of specified duration t and wave shape, at a driving d.c.
p(SC)
voltage V (e.g. two-thirds V ), driving conditions and a maximum stored energy E of the
CC CES C
feeding d.c. line capacitor, C, and specified short-circuit inductance L (see Note 4 below
SC
and Annex A).
NOTE 1 If an isolated device suffers a short-circuit, then most of the energy stored in the system is discharged
into the d
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