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ASTM E1855-05

(Test Method)

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

SCOPE
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.
1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 10 12 n/cm2 and 1 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.
1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

General Information

Status
Historical
Publication Date
30-Jun-2005
ICS
31.200 - Integrated circuits. Microelectronics
Technical Committee
E10 - Nuclear Technology and Applications
Drafting Committee
E10.07 - Radiation Dosimetry for Radiation Effects on Materials and Devices
Current Stage
Ref Project

Relations

Replaces
ASTM E1855-04e1 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Effective Date
01-Jul-2005
Replaced By
ASTM E1855-05e1 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Effective Date
01-Jul-2005
Referred By
ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
Effective Date
01-Jul-2005
Referred By
ASTM F980-16 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
Effective Date
01-Jul-2005
Referred By
ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
Effective Date
01-Jul-2005
Referred By
ASTM E721-22 - Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
Effective Date
01-Jul-2005

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ASTM E1855-05 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage MonitorsASTM E1855-05 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
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ASTM E1855-05 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
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Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:E1855–05
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope E170 Terminology Relating to Radiation Measurements
and Dosimetry
1.1 This test method covers the use of 2N2222A silicon
E265 Test Method for Measuring Reaction Rates and
bipolartransistorsasdosimetrysensorsinthedeterminationof
Fast-Neutron Fluences by Radioactivation of Sulfur-32
neutron energy spectra, and as silicon 1-MeV equivalent
E720 Guide for Selection and Use of Neutron-Activation
displacement damage fluence monitors.
Foils for Determining Neutron Spectra Employed in
1.2 Theneutrondisplacementdamageisespeciallyvaluable
Radiation-Hardness Testing of Electronics
as a spectrum sensor in the range 0.1 to 2.0 MeV when fission
E721 Guide for Determining Neutron Energy Spectra from
foils are not available. It has been applied in the fluence range
2 14 2
Neutron Sensors for Radiation-Hardness Testing of Elec-
between 2 3 10 12 n/cm and 1 3 10 n/cm and should be
2
tronics
useful up to 1015 n/cm . This test method details the steps for
E722 Practice for Characterizing Neutron Energy Fluence
the acquisition and use of silicon 1-MeV equivalent fluence
Spectra inTerms of an Equivalent Monoenergetic Neutron
information (in a manner similar to the use of activation foil
Fluence for Radiation-Hardness Testing of Electronics
data) for the determination of neutron spectra.
E844 Guide for Sensor Set Design and Irradiation for
1.3 In addition, this sensor can provide important confirma-
Reactor Surveillance, E706 (IIC)
tion of neutron spectra determined with other sensors, and
E944 PracticeforApplicationofNeutronSpectrumAdjust-
yields a direct measurement of the silicon 1-MeV fluence by
ment Methods in Reactor Surveillance, (IIA)
the transfer technique.
E1854 Practice for Ensuring Test Consistency in Neutron-
1.4 This standard does not purport to address all of the
Induced Displacement Damage of Electronic Parts
safety concerns, if any, associated with its use. It is the
E2005 Guide for the Benchmark Testing of Reactor Do-
responsibility of the user of this standard to establish appro-
simetry in Standard and Reference Neutron Fields
priate safety and health practices and determine the applica-
bility of regulatory requirements prior to use.
3. Terminology
2. Referenced Documents 3.1 Symbols:
F =the silicon 1-MeV equivalent fluence (see Practice
1
2.1 The ASTM standards listed in 2.2 from Terminology
E722).
E170 through Test Method E265 provide a background for
h =i /i where i is the collector current and i is the base
FE c b c b
understandinghowsensorsareusedinradiationmeasurements
current, in a common emitter circuit.
and general dosimetry. The rest of the standards referenced in
the list discuss the choice of sensors, spectrum determinations
4. Summary of Test Method
with sensor data, and the prediction of neutron displacement
4.1 Gaindegradationof2N2222Asiliconbipolartransistors
damage in some semiconductor devices, particularly silicon.
2
measured in a test (simulation) environment is compared with
2.2 ASTM Standards:
that measured in a reference neutron environment. The F in
1r
thereferenceenvironmentisderivedfromtheknownreference
1
ThistestmethodisunderthejurisdictionofASTMCommitteeE10onNuclear spectrum and is used to determine a measured F in the test
1t
3
Technology and Applications and is the direct responsibility of Subcommittee
environment (1,2) by the transfer technique. The and refer
r t
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices.
to the reference and test environments respectively.
Current edition approved July 1, 2005. Published August 2005. Originally
e1
approved in 1996. Last previous edition approved in 2004 as E1855–04 .
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
3
Standards volume information, refer to the standard’s Document Summary page on The boldface numbers in parentheses refer to a list of references at the end of
the ASTM website. this test method.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
E1855–05
4.2 The measured F may be used as a sensor response in silicon.Ascanbeseenfromthefigure,themajorportionofthe
1t
a spectrum adjustment code in a manner similar to th
...

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5.1 The neutron test spectrum must be known in order to use a measured device response to predict the device performance in an operational environment (Practice E1854). Typically, neutron spectra are determined using a set of sensors with response functions sensitive over the neutron energy region to which the device under test (DUT) responds (Guide E721). For silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 235U, 237Np, or 239Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range making its determination of critical importance.  
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