ASTM E1855-20
(Test Method)Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
SIGNIFICANCE AND USE
5.1 The neutron test spectrum must be known in order to use a measured device response to predict the device performance in an operational environment (Practice E1854). Typically, neutron spectra are determined using a set of sensors with response functions sensitive over the neutron energy region to which the device under test (DUT) responds (Guide E721). For silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 235U, 237Np, or 239Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range making its determination of critical importance.
5.2 When dosimeters with a significant response in the 0.01 to 2 MeV energy region, such as fission foils, are unavailable, silicon transistors can provide a dosimeter with the needed response to define the spectrum in this critical energy range. When fission foils are part of the sensor set, the silicon sensor provides confirmation of the spectral shape in this energy region.
5.3 Silicon bipolar transistors, such as type 2N2222A, are inexpensive, smaller than fission foils contained in a boron ball, and sensitive to a part of the neutron spectrum important to the damage of modern silicon electronics. They also can be used directly in arrays to spatially map 1-MeV(Si) equivalent displacement damage fluence. The proper set of steps to take in reading the transistor-gain degradation is described in this test method.
5.4 The energy-dependence of the displacement damage function for silicon is found in Practice E722. The major portion of the response for the silicon transistors will generally be above 100 keV.
SCOPE
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra and as 1-MeV(Si) equivalent displacement damage fluence monitors.
1.2 The neutron displacement in silicon can serve as a neutron spectrum sensor in the range 0.1 to 2.0 MeV and can serve as a substitute when fission foils are not available. It has been applied in the fluence range between 2 × 1012 n/cm 2 to 1 × 1014 n/cm2 and should be useful up to 1 × 1015 n/cm2. This test method details the acquisition and use of 1-MeV(Si) equivalent fluence information for the partial determination of the neutron spectra by using 2N2222A transistors.
1.3 This sensor yields a direct measurement of the silicon 1-MeV equivalent fluence by the transfer technique.
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.
1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
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This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the
Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
Designation: E1855 − 20
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope standards referenced in the list discuss relevant terminology,
the choice of sensors, spectrum determinations with sensor
1.1 This test method covers the use of 2N2222A silicon
data, and the prediction of neutron displacement damage in
bipolar transistors as dosimetry sensors in the determination of
some semiconductor devices, particularly silicon.
neutron energy spectra and as 1-MeV(Si) equivalent displace-
2
ment damage fluence monitors. 2.2 ASTM Standards:
E170Terminology Relating to Radiation Measurements and
1.2 The neutron displacement in silicon can serve as a
Dosimetry
neutron spectrum sensor in the range 0.1 to 2.0 MeV and can
E261Practice for Determining Neutron Fluence, Fluence
serve as a substitute when fission foils are not available. It has
12 2 Rate, and Spectra by Radioactivation Techniques
been applied in the fluence range between2×10 n/cm to 1
14 2 15 2 E265Test Method for Measuring Reaction Rates and Fast-
×10 n/cm and should be useful up to1×10 n/cm . This
Neutron Fluences by Radioactivation of Sulfur-32
test method details the acquisition and use of 1-MeV(Si)
E720Guide for Selection and Use of Neutron Sensors for
equivalent fluence information for the partial determination of
Determining Neutron Spectra Employed in Radiation-
the neutron spectra by using 2N2222A transistors.
Hardness Testing of Electronics
1.3 This sensor yields a direct measurement of the silicon
E721Guide for Determining Neutron Energy Spectra from
1-MeV equivalent fluence by the transfer technique.
Neutron Sensors for Radiation-Hardness Testing of Elec-
1.4 The values stated in SI units are to be regarded as tronics
E722PracticeforCharacterizingNeutronFluenceSpectrain
standard. No other units of measurement are included in this
standard. Terms of an Equivalent Monoenergetic Neutron Fluence
for Radiation-Hardness Testing of Electronics
1.5 This standard does not purport to address all of the
E844Guide for Sensor Set Design and Irradiation for
safety concerns, if any, associated with its use. It is the
Reactor Surveillance
responsibility of the user of this standard to establish appro-
E944Guide for Application of Neutron Spectrum Adjust-
priate safety, health, and environmental practices and deter-
ment Methods in Reactor Surveillance
mine the applicability of regulatory limitations prior to use.
E1854Practice for Ensuring Test Consistency in Neutron-
1.6 This international standard was developed in accor-
Induced Displacement Damage of Electronic Parts
dance with internationally recognized principles on standard-
E2005Guide for Benchmark Testing of Reactor Dosimetry
ization established in the Decision on Principles for the
in Standard and Reference Neutron Fields
Development of International Standards, Guides and Recom-
E2450Practice for Application of CaF (Mn) Thermolumi-
2
mendations issued by the World Trade Organization Technical
nescence Dosimeters in Mixed Neutron-Photon Environ-
Barriers to Trade (TBT) Committee.
ments
2. Referenced Documents
3. Terminology
2.1 The ASTM standards E170, E261, and E265 provide a
3.1 Symbols:
background for understanding how sensors are used in radia-
Φ =thesilicon1-MeVequivalentfluence(seePracticeE722).
1
tion measurements and general dosimetry. The rest of the
h = i /i where i is the collector current and i is the base
FE c b c b
current, in a common-emitter circuit.
1
ThistestmethodisunderthejurisdictionofASTMCommitteeE10onNuclear
Technology and Applications and is the direct responsibility of Subcommittee
2
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved Feb. 1, 2020. Published February 2020. Originally contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
approved in 1996. Last previous edition approved in 2015 as E1855–15. DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/E1855-20. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
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This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation: E1855 − 15 E1855 − 20
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron
energy spectra and as 1 Mev(Si) 1-MeV(Si) equivalent displacement damage fluence monitors.
1.2 The neutron displacement in silicon can serve as a neutron spectrum sensor in the range 0.1 to 2.0 MeV and can serve as
12 2 14 2
a substitute when fission foils are not available. It has been applied in the fluence range between 2 × 10 n/cm to 1 × 10 n/cm
15 2
and should be useful up to 1 × 10 n/cm . This test method details the acquisition and use of 1 Mev(Si) 1-MeV(Si) equivalent
fluence information for the partial determination of the neutron spectra by using 2N2222A transistors.
1.3 This sensor yields a direct measurement of the silicon 1 Mev 1-MeV equivalent fluence by the transfer technique.
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety safety, health, and healthenvironmental practices and determine the
applicability of regulatory requirementslimitations prior to use.
1.6 This international standard was developed in accordance with internationally recognized principles on standardization
established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued
by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
2. Referenced Documents
2.1 The ASTM standards E170, E261, and E265 provide a background for understanding how sensors are used in radiation
measurements and general dosimetry. The rest of the standards referenced in the list discuss relevant terminology, the choice of
sensors, spectrum determinations with sensor data, and the prediction of neutron displacement damage in some semiconductor
devices, particularly silicon.
2
2.2 ASTM Standards:
E170 Terminology Relating to Radiation Measurements and Dosimetry
E261 Practice for Determining Neutron Fluence, Fluence Rate, and Spectra by Radioactivation Techniques
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E844 Guide for Sensor Set Design and Irradiation for Reactor Surveillance
E944 Guide for Application of Neutron Spectrum Adjustment Methods in Reactor Surveillance
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
E2005 Guide for Benchmark Testing of Reactor Dosimetry in Standard and Reference Neutron Fields
E2450 Practice for Application of CaF (Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
2
1
This test method is under the jurisdiction of ASTM Committee E10 on Nuclear Technology and Applications and is the direct responsibility of Subcommittee E10.07
on Radiation Dosimetry for Radiation Effects on Materials and Devices.
Current edition approved Oct. 1, 2015Feb. 1, 2020. Published November 2015February 2020. Originally approved in 1996. Last previous edition approved in 20102015
as E1855 – 10.E1855 – 15. DOI: 10.1520/E1855-15.10.1520/E1855-20.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. Unit
...
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