ASTM F1892-98

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Designation: F 1892 – 98
Standard Guide for
Ionizing Radiation (Total Dose) Effects Testing of
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Semiconductor Devices
This standard is issued under the fixed designation F 1892; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
INTRODUCTION
This guide is designed to assist investigators in performing ionizing radiation effects testing of
semiconductor devices, commonly termed total dose testing. When actual use conditions, which
includes dose, dose rate, temperature, and bias conditions and the time sequence of application of
these conditions, are the same as those used in the test procedure, the results obtained using these test
methods apply without qualification. For some part types, results obtained when following this guide
are much more broadly applicable. There are many part types, however, where care must be used in
extrapolating test results to situations that do not duplicate all aspects of the test conditions in which
the response data were obtained. For example, some linear bipolar devices and devices containing
metal oxide semiconductor (MOS) structures require special treatment. This guide provides direction
for appropriate testing of such devices.
1. Scope 1.5.1 Determination of the Need to Perform Device
Characterization—For some cases it may be more appropriate
1.1 This guide presents background and guidelines for
to adopt some kind of worst case testing scheme that does not
establishing an appropriate sequence of tests and data analysis
require device characterization. For other cases it may be most
procedures for determining the ionizing radiation (total dose)
effective to determine the effect of dose-rate on the radiation
hardness of microelectronic devices for dose rates below 300
sensitivity of a device. As necessary, the appropriate level of
rd(SiO )/s. These tests and analysis will be appropriate to assist
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detail of such a characterization also must be determined.
in the determination of the ability of the devices under test to
1.5.2 Determination of an Effective Strategy for Minimizing
meet specific hardness requirements or to evaluate the parts for
the Effects of Irradiation Dose Rate on the Test Result—The
use in a range of radiation environments.
results of radiation testing on some types of devices are
1.2 The methods and guidelines presented will be applicable
relatively insensitive to the dose rate of the radiation applied in
to characterization, qualification, and lot acceptance of silicon-
the test. In contrast, many MOS devices and some bipolar
based MOS and bipolar discrete devices and integrated cir-
devices have a significant sensitivity to dose rate. Several
cuits. They will be appropriate for treatment of the effects of
different strategies for managing the dose rate sensitivity of test
electron and photon irradiation.
results will be discussed.
1.3 This guide provides a framework for choosing a test
1.5.3 Choice of an Effective Test Methodology—The selec-
sequence based on general characteristics of the parts to be
tion of effective test methodologies will be discussed.
tested and the radiation hardness requirements or goals for
1.6 Low Dose Requirements—Hardness testing of MOS and
these parts.
bipolar microelectronic devices for the purpose of qualification
1.4 This guide provides for tradeoffs between minimizing
or lot acceptance is not necessary when the required hardness
the conservative nature of the testing method and minimizing
is 100 rd(SiO ) or lower.
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the required testing effort.
1.7 Sources—This guide will cover effects due to device
1.5 Determination of an effective and economical hardness
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testing using irradiation from photon sources, such as Co g
test typically will require several kinds of decisions. A partial
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irradiators, Cs g irradiators, and low energy (approximately
enumeration of the decisions that typically must be made is as
10 keV) X-ray sources. Other sources of test radiation such as
follows:
linacs, Van de Graaff sources, Dymnamitrons, SEM’s, and
flash X-ray sources occasionally are used but are outside the
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This guide is under the jurisdiction of ASTM Committee F-01 on Electronics
scope of this guide.
and is the direct responsibility of Subcommittee F01.11 on Quality Hardness
1.8 Displacement damage effects are outside the scope of
Assurance.
this guide, as well.
Current edition approved May 10, 1998. Published November 1998.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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F 1892
1.9 The values stated
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