ASTM F1892-12(2018)

This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the
Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
Designation: F1892 − 12 (Reapproved 2018)
Standard Guide for
Ionizing Radiation (Total Dose) Effects Testing of
Semiconductor Devices
This standard is issued under the fixed designation F1892; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
INTRODUCTION
This guide is designed to assist investigators in performing ionizing radiation effects testing of
semiconductor devices, commonly termed total dose testing. When actual use conditions, which
include dose, dose rate, temperature, and bias conditions and the time sequence of application of these
conditions, are the same as those used in the test procedure, the results obtained using this guide
applies without qualification. For some part types, results obtained when following this guide are
much more broadly applicable. There are many part types, however, where care must be used in
extrapolating test results to situations that do not duplicate all aspects of the test conditions in which
the response data were obtained. For example, some linear bipolar devices and devices containing
metal oxide semiconductor (MOS) structures require special treatment. This guide provides direction
for appropriate testing of such devices.
1. Scope 1.5 Determination of an effective and economical hardness
test typically will require several kinds of decisions. A partial
1.1 This guide presents background and guidelines for
enumeration of the decisions that typically must be made is as
establishing an appropriate sequence of tests and data analysis
follows:
procedures for determining the ionizing radiation (total dose)
1.5.1 Determination of the Need to Perform Device
hardness of microelectronic devices for dose rates below 300
Characterization—For some cases it may be more appropriate
rd(SiO )/s. These tests and analysis will be appropriate to assist
to adopt some kind of worst case testing scheme that does not
in the determination of the ability of the devices under test to
require device characterization. For other cases it may be most
meet specific hardness requirements or to evaluate the parts for
effective to determine the effect of dose-rate on the radiation
use in a range of radiation environments.
sensitivity of a device. As necessary, the appropriate level of
1.2 The methods and guidelines presented will be applicable
detail of such a characterization also must be determined.
to characterization, qualification, and lot acceptance of silicon-
1.5.2 Determination of an Effective Strategy for Minimizing
based MOS and bipolar discrete devices and integrated cir-
the Effects of Irradiation Dose Rate on the Test Result—The
cuits. They will be appropriate for treatment of the effects of
results of radiation testing on some types of devices are
electron and photon irradiation.
relatively insensitive to the dose rate of the radiation applied in
the test. In contrast, many MOS devices and some bipolar
1.3 This guide provides a framework for choosing a test
devices have a significant sensitivity to dose rate. Several
sequence based on general characteristics of the parts to be
different strategies for managing the dose rate sensitivity of test
tested and the radiation hardness requirements or goals for
results will be discussed.
these parts.
1.5.3 Choice of an Effective Test Methodology—The selec-
1.4 This guide provides for tradeoffs between minimizing
tion of effective test methodologies will be discussed.
the conservative nature of the testing method and minimizing
1.6 Low Dose Requirements—Hardness testing of MOS and
the required testing effort.
bipolar microelectronic devices for the purpose of qualification
or lot acceptance is not necessary when the required hardness
is 100 rd(SiO ) or lower.
This guide is under the jurisdiction of ASTM Committee E10 on Nuclear
Technology and Applications and is the direct responsibility of Subcommittee
1.7 Sources—This guide will cover effects due to device
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices. 60
testing using irradiation from photon sources, such as Co γ
Current edition approved March 1, 2018. Published April 2018. Originally
irradiators, Cs γ irradiators, and low energy (approximately
approved in 1998. Last previous edition approved in 2012 as F1892 – 12. DOI:
10.1520/F1892-12R18. 10 keV) X-ray sources. Other sources of test radiation such as
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
F1892 − 12 (2018)
linacs, Van de Graaff sources, Dymnamitrons, SEMs, and flash 3.2 Definitions of Terms Specific to This Standard:
X-ray sources occasionally are used but are outside the scope 3.2.1 accelerated annealing test, n—procedure utilizing el-
of this guide.
evated temperature to accelerate time-dependent growth and
annealing of trapped charge.
1.8 Displacement damage effects are outside the scope of
this guide, as well. 3.2.2 category A, n—used to refer to a part containing
bipolar structures that is not low dose rate sensitive.
1.9 The values stated in SI units are to be regarded as the
standard. 3.2.3 category B, n—used to refer to a part containing
bipolar structures that is low dose rate sensitive.
1.10 This international standard was developed in accor-
dance with internationally recognized principles on standard- 3.2.4 characterization, n—testing to determine the effect of
ization established in the Decision on Principles for the dose, dose-rate, bias, temperature, etc. on the radiation induced
Development of International Standards, Guides and Recom- degradation of a part.
mendations issued by the World Trade Organization Technical
3.2.5 delayed reaction rate effect (DRRE), n—a time and
Barriers to Trade (TBT) Committee.
temperature dependent effect where the rate of degradation for
a second irradiation is much greater than the rate of degrada-
2. Referenced Documents
tion for the first irradiation after a delay time that is dependent
2.1 ASTM Standards:
on the temperature of the part during the time between the two
E170 Terminology Relating to Radiation Measurements and
irradiations.
Dosimetry
3.2.6 enhanced low dose rate sensitivity (ELDRS), n—used
E666 Practice for Calculating Absorbed Dose From Gamma
to refer to a bipolar part that shows enhanced (greater)
or X Radiation
radiation induced damage for a fixed dose at dose rates below
E668 Practice for Application of Thermoluminescence-
about 50 rd(SiO )/s compared to damage at the same dose for
Dosimetry (TLD) Systems for Determining Absorbed
dose rates of >50 rd(SiO )/s. The enhancement may be a result
Dose in Radiation-Hardness Testing of Electronic Devices
of true dose rate effects or time dependent effects, or both.
E1249 Practice for Minimizing Dosimetry Errors in Radia-
3.2.7 gray, n—the gray (Gy) symbol, is the SI unit of
tion Hardness Testing of Silicon Electronic Devices Using
absorbed dose, defined as 1 Gy = 1 J/kg (1 Gy = 100 rd).
Co-60 Sources
E1250 Test Method for Application of Ionization Chambers
3.2.8 in-flux tests, n—measurements made in-situ while the
to Assess the Low Energy Gamma Component of
test device is in the radiation field.
Cobalt-60 Irradiators Used in Radiation-Hardness Testing
3.2.9 in-situ tests, n—electrical measurements made on
of Silicon Electronic Devices
devices during, or before-and-after, irradiation while they
F996 Test Method for Separating an Ionizing Radiation-
remain in the irradiation location.
Induced MOSFET Threshold Voltage Shift Into Compo-
3.2.10 in-source tests, n—an in-flux test.
nents Due to Oxide Trapped Holes and Interface States
Using the Subthreshold Current–Voltage Characteristics
3.2.11 ionizing radiation effects, n—the changes in the
F1467 Guide for Use of an X-Ray Tester (≈10 keV Photons) electrical parameters of a microelectronic device resulting from
in Ionizing Radiation Effects Testing of Semiconductor
radiation-induced trapped charge.
Devices and Microcircuits
3.2.11.1 Discussion—Ionizing radiation effects are some-
ISO/ASTM 51275 Practice for Use of a Radiochromic Film
times referred to as“ total dose effects.”
Dosimetry System
3.2.11.2 Discussion—In this guide, doses and dose rates are
2.2 Military Specifications:
specified in rd(SiO ) as contrasted with the use of rd(Si) in
MIL-STD-883 , Method 1019, Ionizing Radiation (Total other related standards. The reason is that for ionizing radiation
Dose) Test Method
effects in silicon based microelectronic components, it is the
MIL-STD-750 , Method 1019, Steady-State Total Dose Ir- energy deposited in the SiO gate, field, and spacer oxides that
radiation Procedure
is responsible for the radiation-induced degradation effects. For
MIL-HDBK-814 Ionizing Dose and Neutron Hardness As- high energy irradiation, for example, Co photons, the differ-
surance Guidelines for Microcircuits and Semiconductor
ence between dose deposited in Si and SiO typically is
Devices negligible. For X-ray irradiation, approximately 10 keV photon
energy, the energy deposited in Si under some circumstances
3. Terminology
may be approximately 1.8 times the energy deposited in SiO .
For additional details, see Guide F1467.
3.1 For terms relating to radiation measurements and
dosimetry, see Terminology E170.
3.2.12 not in-flux test, n—electrical measurements made on
devices at any time other than during irradiation.
3.2.13 overtest, n—a factor that is applied to the specifica-
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
tion dose to determine the test dose level that the samples must
Standards volume information, refer to the standard’s Document Summary page on
pass to be acceptable at the specification level. An overtest
the ASTM website.
factor of 1.5 means that the parts must be tested at 1.5 times the
Available from the Standardization Documents Order Desk, Building 4, Section
D, 700 Robbins Ave., Philadelphia, PA 19111–5094. specification dose.
F1892 − 12 (2018)
3.2.14 parameter delta design margin (PDDM), n—a design (a) Radiation Source—The type of radiation source ( Co,
margin that is applied to the radiation induced change in an X-ray, etc.) that is to be used.
electrical parameter.
NOTE 1—The ionizing dose response of many device types has been
3.2.14.1 Discussion—For example, for a PDDM of 3 the
shown to depend on the type of ionizing radiation to which the device is
change in a parameter at a specified dose from the pre-
subjected. The selection of a suitable radiation source for use in such a test
irradiation value is multiplied by three and added to the must be based on the understanding that the gamma or electron radiation
source will induce a device response that then should be correlated to the
pre-irradiation value to see if the sample exceeds the post-
response anticipated in the device application.
irradiation parameter limit. For example, if the pre-irradiation
(b) Dose Rate Range—The range of dose rates within
value of I is 30 nA and the post-irradiation value at 20
b
which the radiation exposures must take place (see 6.4).
krd(SiO ) is 70 nA (change in I is 40 nA), then for a PDDM
2 b
NOTE 2—The response of many devices has been shown to be highly
of 3 the post-irradiation value would be 150 nA (30 nA + 3 X
dependent on the rate at which the dose is accumulated. There must be a
40 nA). If the allowable post-irradiation limit is 100 nA the part
demonstrated correlation between the response of the device under the
would fail.
selected test conditions and the rate at which the device would be expected
to accumulate dose in its intended application.
3.2.15 qualification, n—testing to determine the adequacy
(c) Operating Conditions—The test circuit, electrical bi-
of a part to meet the requirements of a specific application.
ases to be applied, and the electrical operating sequence, if
3.2.16 rad, n—the rad symbol, rd, is a commonly used unit
applicable, for the part during irradiation (see 6.3). This
for absorbed dose, defined in terms of the SI unit of absorbed
includes the use of in-flux or not in-flux testing.
dose as 1 rd = 0.01 Gy.
(d) Electrical Parameters—The measurements that are to
3.2.17 remote tests, n—electrical measurements made on
be made on the test devices before, during (if appropriate), and
devices that are removed physically from the irradiation after (if appropriate) irradiation.
location for the measurements.
(e) Time Sequence—The exposure time, the elapsed time
between exposure and post-exposure measurements, and the
3.2.18 time dependent effects (TDE), n—the time dependent
time between irradiations (see 6.5).
growth and annealing of ionizing radiation induced trapped
(f) Irradiation Levels—The dose(s) to which the test device
charge and interface states and the resulting transistor or IC
is to be exposed between measurements (see Practice E666).
parameter changes caused by these effects.
(g) Dosimetry—The dosimetry technique (TLDs,
3.2.18.1 Discussion—Similar effects also take place during
calorimeters, diodes, etc.) to be used. This depends to some
irradiation. Because of the complexity of time dependent
extent on the radiation source selection.
effects, alternative, but not inconsistent, definitions may prove
(h) Temperature—Exposure, measurement, and storage
useful. Two of these are: the complex of time-dependent
temperature ranges (see 6.5 and 6.6).
processes that alter trapped oxide change (ΔN ) and interface
ot
(i) Experimental Configuration—The physical arrange-
trap density (ΔN ) in an MOS or bipolar structure during and
it
ment of the radiation source, test unit, radiation shielding, and
after irradiation; and, the effects of these processes upon device
any other mechanical or electrical elements of the test.
or circuit characteristics or performance, or both.
(j) Accelerated Annealing Testing for MOS—The acceler-
3.2.19 true dose rate effect, n—a response that occurs during
ated annealing tests called for in 8.2.2.3 (a) through (e) should
low dose rate irradiation that cannot be reproduced with a high
be performed for hardness assurance testing of any device that
dose rate irradiation followed by an equivalent time anneal.
contains MOS elements by design. Further requirements and
exceptions to such accelerated annealing testing may be made
4. Summary of Guide
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