SIST EN 62276:2017

SLOVENSKI STANDARD
SIST EN 62276:2017
01-februar-2017
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SIST EN 62276:2013
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Single crystal wafers for surface acoustic wave (SAW) device applications -
Specifications and measuring methods (IEC 62276:2016)
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren (IEC 62276:2016)
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure (IEC 62276:2016)
Ta slovenski standard je istoveten z: EN 62276:2016
ICS:
31.140 3LH]RHOHNWULþQHQDSUDYH Piezoelectric devices
SIST EN 62276:2017 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62276:2017

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SIST EN 62276:2017


EUROPEAN STANDARD EN 62276

NORME EUROPÉENNE

EUROPÄISCHE NORM
December 2016
ICS 31.140 Supersedes EN 62276:2013
English Version
Single crystal wafers for surface acoustic wave (SAW) device
applications - Specifications and measuring methods
(IEC 62276:2016)
Tranches monocristallines pour applications utilisant des Einkristall-Wafer für Oberflächenwellen-(OFW-
dispositifs à ondes acoustiques de surface (OAS) - )Bauelemente - Festlegungen und Messverfahren
Spécifications et méthodes de mesure (IEC 62276:2016)
(IEC 62276:2016)
This European Standard was approved by CENELEC on 2016-11-28. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN 62276:2016 E

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SIST EN 62276:2017
EN 62276:2016
European foreword
The text of document 49/1144/CDV, future edition 3 of IEC 62276, prepared by IEC/TC 49
“Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control,
selection and detection” was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN 62276:2016.

The following dates are fixed:
• latest date by which the document has to be (dop) 2017-08-28
implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2019-11-28
• latest date by which the national
standards conflicting with the
document have to be withdrawn

This document supersedes EN 62276:2013.

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.

Endorsement notice
The text of the International Standard IEC 62276:2016 was approved by CENELEC as a European
Standard without any modification.
IEC 61019-1 NOTE Harmonized as EN 61019-1.
IEC 61019-2 NOTE Harmonized as EN 61019-2.
IEC 61019-3 NOTE Harmonized as EN 61019-3.
ISO 4287:1997 NOTE Harmonized as EN ISO 4287:1998.

2

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SIST EN 62276:2017
EN 62276:2016

Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant

EN/HD applies.

NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year
IEC 60758 2016 Synthetic Quartz Crystal - Specifications EN 60758 2016
and guidelines for use
ISO 2859-1 1989 Sampling procedures for inspection by - -
attributes; part_1: sampling plans indexed
by acceptable quality level (AQL) for lot-by-
lot inspection

3

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SIST EN 62276:2017

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SIST EN 62276:2017



IEC 62276

®


Edition 3.0 2016-10




INTERNATIONAL



STANDARD



















Single crystal wafers for surface acoustic wave (SAW) device applications –

Specifications and measuring methods



























INTERNATIONAL

ELECTROTECHNICAL


COMMISSION





ICS 31.140 ISBN 978-2-8322-3691-8



  Warning! Make sure that you obtained this publication from an authorized distributor.


® Registered trademark of the International Electrotechnical Commission

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CONTENTS
FOREWORD . 5
INTRODUCTION . 7
1 Scope . 8
2 Normative references . 8
3 Terms and definitions . 8
3.1 Single crystals for SAW wafer . 8
3.2 Terms and definitions related to LN and LT crystals . 9
3.3 Terms and definitions related to all crystals . 9
3.4 Flatness . 10
3.5 Definitions of appearance defects . 12
3.6 Other terms and definitions . 13
4 Requirements . 14
4.1 Material specification . 14
4.1.1 Synthetic quartz crystal . 14
4.1.2 LN . 15
4.1.3 LT . 15
4.1.4 LBO, LGS . 15
4.2 Wafer specifications . 15
4.2.1 General . 15
4.2.2 Diameters and tolerances . 15
4.2.3 Thickness and tolerance . 15
4.2.4 Orientation flat . 15
4.2.5 Secondary flat . 16
4.2.6 Back surface roughness . 16
4.2.7 Warp . 16
4.2.8 TV5 or TTV . 16
4.2.9 Front (propagation) surface finish . 17
4.2.10 Front surface defects . 17
4.2.11 Surface orientation tolerance . 18
4.2.12 Inclusions . 18
4.2.13 Etch channel number and position of seed for quartz wafer . 18
4.2.14 Bevel . 18
4.2.15 Curie temperature and tolerance. 18
4.2.16 Lattice constant . 18
4.2.17 Bulk resistivity (conductivity) for reduced LN and LT . 19
5 Sampling plan . 19
5.1 General . 19
5.2 Sampling. 19
5.3 Sampling frequency . 19
5.4 Inspection of whole population . 19
6 Test methods . 19
6.1 Diameter . 19
6.2 Thickness . 20
6.3 Dimension of OF . 20
6.4 Orientation of OF . 20
6.5 TV5 . 20

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IEC 62276:2016  IEC 2016 – 3 –
6.6 Warp . 20
6.7 TTV . 20
6.8 Front surface defects . 20
6.9 Inclusions . 20
6.10 Back surface roughness . 20
6.11 Orientation . 20
6.12 Curie temperature . 20
6.13 Lattice constant . 20
6.14 Bulk resistivity . 21
7 Identification, labelling, packaging, delivery condition . 21
7.1 Packaging . 21
7.2 Labelling and identification . 21
7.3 Delivery condition . 21
8 Measurement of Curie temperature . 21
8.1 General . 21
8.2 DTA method . 21
8.3 Dielectric constant method . 22
9 Measurement of lattice constant (Bond method) . 23
10 Measurement of face angle by X-ray. 24
10.1 Measurement principle . 24
10.2 Measurement method . 25
10.3 Measuring surface orientation of wafer. 25
10.4 Measuring OF flat orientation . 25
10.5 Typical wafer orientations and reference planes. 25
11 Measurement of bulk resistivity . 26
11.1 Resistance measurement of a wafer . 26
11.2 Electrode . 27
11.3 Bulk resistivity . 27
12 Visual inspections – Front surface inspection method . 27
Annex A (normative) Expression using Euler angle description for piezoelectric single
crystals . 29
A.1 Wafer orientation using Euler angle description . 29
Annex B (informative) Manufacturing process for SAW wafers . 32
B.1 Crystal growth methods . 32
B.1.1 Czochralski growth method . 32
B.1.2 Vertical Bridgman method . 34
B.2 Standard mechanical wafer manufacturing . 35
B.2.1 Process flow-chart . 35
B.2.2 Cutting both ends and cylindrical grinding . 36
B.2.3 Marking orientation . 37
B.2.4 Slicing . 37
B.2.5 Double-sided lapping . 37
B.2.6 Bevelling (edge rounding) . 37
B.2.7 Mirror polishing . 37
Bibliography . 38

Figure 1 – Wafer sketch and measurement points for TV5 determination . 10
Figure 2 – Schematic diagram of TTV . 11

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Figure 3 – Schematic diagram of warp . 11
Figure 4 – Schematic diagram of Sori . 11
Figure 5 – Example of site distribution for LTV measurement . 12
Figure 6 – LTV value of each site . 12
Figure 7 – Schematic of a DTA system . 22
Figure 8 – Schematic of a dielectric constant measurement system . 22
Figure 9 – The Bond method . 24
Figure 10 – Measurement method by X-ray . 24
Figure 11 – Relationship between cut angle and lattice planes . 25
Figure 12 – Measuring circuit . 26
Figure 13 – Resistance measuring equipment . 26
Figure 14 – Shape of electrode . 27
Figure A.1 – Definition of Euler angles to rotate coordinate system (X, Y, Z) onto
( x , x , x ) . 29
1 2 3
Figure A.2 – SAW wafer coordinate system . 30
Figure A.3 – Relationship between the crystal axes, Euler angles, and SAW orientation
for some wafer orientations . 31
Figure B.1 – Czochralski crystal growth method . 32
Figure B.2 – Example of non-uniformity in crystals grown from different starting melt
compositions . 34
Figure B.3 – Schematic of a Vertical Bridgman furnace and example of temperature
distribution . 35
Figure B.4 – Process flow-chart . 36

Table 1 – Description of wafer orientations . 14
Table 2 – Roughness, warp, TV5 and TTV specification limits . 17
Table 3 – Maximum number of etch channels in seed position . 18
Table 4 – Crystal planes to determine surface and OF orientations . 25
Table 5 – Electrode size . 27
Table A.1 – Selected SAW substrate orientations and corresponding Euler angles . 30

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SIST EN 62276:2017
IEC 62276:2016  IEC 2016 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SINGLE CRYSTAL WAFERS FOR SURFACE
ACOUSTIC WAVE (SAW) DEVICE APPLICATIONS –
SPECIFICATIONS AND MEASURING METHODS

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62276 has been prepared by IEC technical committee 49:
Piezoelectric, dielectric and electrostatic devices and associated materials for frequency
control, selection and detection.
This third edition cancels and replaces the second edition of IEC 62276 published in 2012. It
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
– Corrections of Euler angle indications in Table 1 and axis directions in Figure 3.
– Definition of “twin“ is not explained clearly enough in 3.3.3. Therefore it is revised by a
more detailed definition.
– Etch channels maximum number at quartz wafer of seed which do not pass through from
surface to back surface are classified for three grades in 4.2.13 a). Users use seed
portions of quartz wafers for devices. They request quartz wafers with less etch channels

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in seeds to reduce defects of devices. The classification of etch channels in seed may
prompt a rise in quartz wafer quality.
The text of this standard is based on the following documents:
CDV Report on voting
49/1144/CDV 49/1170/RVC

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC website under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.

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SIST EN 62276:2017
IEC 62276:2016  IEC 2016 – 7 –
INTRODUCTION
A variety of piezoelectric materials are used for surface acoustic wave (SAW) filter and
resonator applications. Prior to an IEC meeting in 1996 in Rotterdam, wafer specifications
were typically negotiated between users and suppliers. During this meeting, a proposal was
announced to address wafer standardization. This standard has been prepared in order to
provide industry standard technical specifications for manufacturing piezoelectric single
crystal wafers to be used in surface acoustic wave devices.

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– 8 – IEC 62276:2016  IEC 2016
SINGLE CRYSTAL WAFERS FOR SURFACE
ACOUSTIC WAVE (SAW) DEVICE APPLICATIONS –
SPECIFICATIONS AND MEASURING METHODS



1 Scope
This document applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium
tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal
wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW)
filters and resonators.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
IEC 60758:2016, Synthetic quartz crystal – Specifications and guidelines for use
ISO 2859-1: 1999, Sampling procedures for inspection by attributes – Part 1: Sampling
schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1 Single crystals for SAW wafer
3.1.1
as-grown synthetic quartz crystal
right-handed or left-handed single crystal quartz grown hydrothermally
Note 1 to entry: The term “as-grown” indicates a state prior to mechanical fabrication.
Note 2 to entry: See IEC 60758 for further information concerning crystalline quartz.
3.1.2
lithium niobate
LN
single crystals approximately described by chemical formula LiNbO , grown by Czochralski
3
(crystal pulling from melt) or other growing methods
3.1.3
lithium tantalate
LT
single crystals approximately described by chemical formula LiTaO , grown by Czochralski
3
(crystal pulling from melt) or other growing methods

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IEC 62276:2016  IEC 2016 – 9 –
3.1.4
lithium tetraborate
LBO
single crystals described by the chemical formula to Li B O , grown by Czochralski (crystal
2 4 7
pulling from melt), vertical Bridgman, or other growing methods
3.1.5
lanthanum gallium silicate
LGS
single crystals described by the chemical formula to La Ga SiO , grown by Czochralski
3 5 14
(crystal pulling
...