ISO 22415:2019

INTERNATIONAL ISO
STANDARD 22415
First edition
2019-05
Surface chemical analysis —
Secondary ion mass spectrometry
— Method for determining yield
volume in argon cluster sputter depth
profiling of organic materials
Analyse chimique des surfaces — Spectrométrie de masse des ions
secondaires — Méthode de détermination du rendement volumique
dans le cadre du profilage en profondeur de matériaux organiques
par pulvérisation d'argon en grappe
Reference number
©
ISO 2019
© ISO 2019
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ii © ISO 2019 – All rights reserved

Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Symbols (and abbreviated terms) . 1
5 Requirements . 3
5.1 Test samples . 3
5.2 Sputtering ion source . 3
5.3 Analysis conditions . 4
6 Data Acquisition . 5
6.1 Analysis. 5
6.2 Minimum data requirements . 6
6.3 Data quality . 6
7 Calculation of sputtering yield volume . 6
7.1 Introduction . 6
7.2 Determination of sputtering yield volume for a single layer profile . 7
7.2.1 Introduction . 7
7.2.2 First interface position . 7
7.2.3 Interface position between two materials . 7
7.2.4 Sputtering time. 7
7.2.5 Calculation of sputtering yield volume using a single layer thickness . 8
7.3 Determination of sputtering yield volume from profiles of layers of more than one
thickness . 9
7.3.1 Introduction . 9
7.3.2 First interface . 9
7.3.3 Interface between two materials . 9
7.3.4 Areic dose of ions used for sputtering . .10
7.3.5 Calculation of sputtering yield volume using more than one-layer thickness .11
8 Reporting of sputtering yield volume .11
8.1 Required information .11
Annex A (informative) Sputtered area and sputtering beam width.13
Annex B (informative) Examples of depth profile data .18
Annex C (informative) Estimation of sputtering yield volumes for argon clusters .28
Bibliography .30
Foreword
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This document was prepared by Technical Committee ISO/TC 201, Surface chemical analysis,
Subcommittee SC 6, Secondary ion mass spectrometry.
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iv © ISO 2019 – All rights reserved

Introduction
In many technological and biological samples, it is necessary to understand the distribution of organic
chemical species as a function of depth and to combine this with laterally resolved surface chemistry
to provide three-dimensional representations. Secondary ion mass spectrometry is a method capable
of determining depth distribution combined with lateral information. Argon cluster ion beams can
provide sputter depth profiles through most organic materials without causing significant damage and
molecular species may be detected and located by mass spectrometry. This approach can provide depth
resolutions better than 10 nm and depth profiles which extend over many micrometres in thickness. In
order to reconstruct a depth profile or three-dimensional image, it is important to establish the depth
scale in the depth profiling experiment. For this purpose, the sputtering yield volume is required.
The sputtering yield volume defines the ratio between the areic dose of sputtering ions and the
sputtered depth. Knowledge of the sputtering yield volume enables the depth of features of interest to be
determined from the sputtering ion current, the sputtered area and the sputtering time. The sputtering
yield volume depends upon the specific experimental conditions such as the sample temperature, the
material being sputtered, the cluster source identity, kinetic energy and angle of incidence. However, the
prediction of sputtering yield volumes for a particular material is possible using measurements made
from the same material under different experimental conditions. Therefore, reliable measurements of
sputtering yield volumes are required for accurate measurement of depth, to provide comparability
between laboratories and to enable analysts to implement and use sputtering yield volumes reported
by others.
This document provides methods to measure sputtering yield volumes of organic test materials using
argon cluster ions. The test materials should consist of thin films of known thicknesses between 50 nm
and 1 000 nm. The format of the test materials, the measurement of sputtering ion dose, sputtered depth
and reporting requirements for sputtering yield volumes are described. Annex A provides informative
definitions of sputtered area and sputtering beam width and an example of their measurement. Annex B
provides informative examples of typical depth profiles and an example calculation of sputtering yield
volume. Annex C provides informative methods to estimate sputtering yield volumes under different
sputtering conditions.
INTERNATIONAL STANDARD ISO 22415:2019(E)
Surface chemical analysis — Secondary ion mass
spectrometry — Method for determining yield volume in
argon cluster sputter depth profiling of organic materials
1 Scope
This document specifies a method for measuring and reporting argon cluster sputtering yield volumes
of a specific organic material. The method requires one or more test samples of the specified material
as a thin, uniform film of known thickness between 50 and 1 000 nanometres on a flat substrate
which has a different chemical composition to the specified material. This document is applicable to
test samples in which the specified material layer has homogeneous composition in depth and is not
applicable if the depth distribution of compounds in the specified material is inhomogeneous. This
document is applicable to instruments in which the sputtering ion beam irradiates the sample using a
raster to ensure a constant ion dose over the analysis area.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments) applies.
ISO 18115-1:2013, Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in
spectroscopy
3 Terms and definitions
For the purposes of this document, the terms and definitions given in ISO 18115-1:2013 apply.
ISO and IEC maintain terminological databases for use in standardization at the following addresses:
— ISO Online browsing platform: available at https: //www .iso .org/obp
— IEC Electropedia: available at http: //www .electropedia .org/
4 Symbols (and abbreviated terms)
a number of secondary ions used to determine Y
b number of layers of different thicknesses used to determine Y
A area of the raster pattern of the sputtering beam on the
...