IEC 60444-6:2013
(Main)Measurement of quartz crystal unit parameters - Part 6: Measurement of drive level dependence (DLD)
Measurement of quartz crystal unit parameters - Part 6: Measurement of drive level dependence (DLD)
IEC 60444-6:2013 applies to the measurements of drive level dependence (DLD) of quartz crystal units. Two test methods and one referential method are described. This edition includes the following significant technical changes with respect to the previous edition:
a) DLD measurement with oscillation circuit had the traditional method to detect the DLD abnormal modes at present time. Therefore, this method made the transition to the Annex B.
b) High reliability crystal unit is needed to use for various applications at the present day, in order to upgrade the inspection capabilities for DLD abnormal modes, the multi-level reference measurement method was introduced into this specification.
Mesure des paramètres des résonateurs à quartz - Partie 6: Mesure de la dépendance du niveau d'excitation (DNE)
La CEI 60444-6:2013 s'applique aux mesures de la dépendance du niveau d'excitation (DNE) des résonateurs à quartz. Deux méthodes d'essai et une méthode de référence sont décrites. Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente:
a) La mesure de DNE avec le circuit oscillation utilisait la méthode traditionnelle de détection des modes anormaux DNE au temps présent. Donc, cette méthode fait la transition avec l'Annexe B.
b) La grande fiabilité de l'unité de cristal utilisé est nécessaire pour diverses applications actuelles, pour permettre de mettre à jour les capacités d'inspection des modes anormaux des DNE, la méthode de mesure de référence de multi-niveaux a été présentée dans cette spécification.
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Standards Content (Sample)
IEC 60444-6 ®
Edition 2.0 2013-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Measurement of quartz crystal unit parameters –
Part 6: Measurement of drive level dependence (DLD)
Mesure des paramètres des résonateurs à quartz –
Partie 6: Mesure de la dépendance du niveau d'excitation (DNE)
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IEC 60444-6 ®
Edition 2.0 2013-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Measurement of quartz crystal unit parameters –
Part 6: Measurement of drive level dependence (DLD)
Mesure des paramètres des résonateurs à quartz –
Partie 6: Mesure de la dépendance du niveau d'excitation (DNE)
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX R
ICS 31.140 ISBN 978-2-83220-876-2
– 2 – 60444-6 IEC:2013
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 DLD effects . 6
3.1 Reversible changes in frequency and resistance . 6
3.2 Irreversible changes in frequency and resistance . 6
3.3 Causes of DLD effects . 7
4 Drive levels for DLD measurement . 7
5 Test methods. 8
5.1 Method A (Fast standard measurement method) . 8
5.1.1 Testing at two drive levels . 8
5.1.2 Testing according to specification . 8
5.2 Method B (Multi-level reference measurement method) . 9
Annex A (normative) Relationship between electrical drive level and mechanical
displacement of quartz crystal units . 11
Annex B (normative) Method C: DLD measurement with oscillation circuit . 14
Bibliography . 19
Figure 1 – Maximum tolerable resistance ratio γ for the drive level dependence as a
function of the resistances R or R . 9
r2 r3
Figure B.1 – Insertion of a quartz crystal unit in an oscillator . 14
Figure B.2 – Crystal unit loss resistance as a function of dissipated power . 15
Figure B.3 – Behaviour of the R of a quartz crystal units . 16
r
Figure B.4 – Block diagram of circuit system . 16
Figure B.5 – Installed −R in scanned drive level range . 17
osc
Figure B.6 – Drive level behavior of a quartz crystal unit if −R = 70 Ω is used as
osc
test limit in the “Annex B” test . 17
Figure B.7 – Principal schematic diagram of the go/no-go test circuit . 18
60444-6 IEC:2013 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
MEASUREMENT OF QUARTZ CRYSTAL UNIT PARAMETERS –
Part 6: Measurement of drive level dependence (DLD)
FOREWORD
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International Standard IEC 60444-6 has been prepared by lEC technical committee 49:
Piezoelectric, dielectric and electrostatic devices and associated materials for frequency
control, selection and detection.
This second edition cancels and replaces the first edition published in 1995. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) DLD measurement with oscillation circuit had the traditional method to detect the DLD
abnormal modes at present time. Therefore, this method made the transition to the
Annex B.
b) High reliability crystal unit is needed to use for various applications at the present day, in
order to upgrade the inspection capabilities for DLD abnormal modes, the multi-level
reference measurement method was introduced into this specification.
– 4 – 60444-6 IEC:2013
The text of this standard is based on the following documents:
CDV Report on voting
49/1004/CDV 49/1038/RVC
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60444 series, published under the general title Measurement of
quartz crystal unit parameters, can be found on the IEC website.
60444-6 IEC:2013 – 5 –
INTRODUCTION
The drive level (expressed as power/voltage across or current through the crystal unit) forces
the resonator to produce mechanical oscillations by way of piezoelectric effect. In this process,
the acceleration work is converted to kinetic and elastic energy and the power loss to heat.
The latter conversion is due to the inner and outer friction of the quartz resonator.
The frictional losses depend on the velocity of the vibrating masses and increase when the
oscillation is no longer linear or when critical velocities, elongations or strains, excursions or
accelerations are attained in the quartz resonator or at its surfaces and mounting points (see
Annex A). This causes changes in resistance and frequency, as well as further changes due
to the temperature dependence of these parameters.
At “high” drive levels (e.g. above 1 mW or 1 mA for AT-cut crystal units) changes are
observed by all crystal units and these al
...
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