IEC 61435:2013

IEC 61435 ®
Edition 2.0 2013-08
INTERNATIONAL
STANDARD
Nuclear instrumentation – High-purity germanium crystals for radiation
detectors – Measurement methods of basic characteristics

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IEC 61435 ®
Edition 2.0 2013-08
INTERNATIONAL
STANDARD
Nuclear instrumentation – High-purity germanium crystals for radiation

detectors – Measurement methods of basic characteristics

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
PRICE CODE
V
ICS 27.120 ISBN 978-2-8322-1033-8

– 2 – 61435 © IEC:2013(E)
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope and object . 7
2 Normative references . 7
3 Terms, definitions, symbols and abbreviations . 7
3.1 Terms and definitions . 7
3.2 Symbols and abbreviations . 9
3.2.1 Symbols . 9
3.2.2 Abbreviations . 10
3.3 Quantities and units . 10
4 Measurement of net electrically-active impurity concentrations . 10
4.1 Sample preparation for Van der Pauw measurements. 10
4.1.1 General . 10
4.1.2 Equipment . 11
4.1.3 Dimensions and provisions for contacts . 11
4.1.4 Etching . 12
Measurements of (N – N ) . 13
4.2
A D
4.2.1 General . 13
4.2.2 Equipment . 13
4.2.3 Measurements of resistivity . 14
4.2.4 Measurements of Hall coefficient . 14
4.2.5 Calculation of (N – N ) from resistivity . 15
A D
4.2.6 Calculation of drift mobility from a Van der Pauw measurement . 15
4.2.7 Computation of (N – N ) from R . 16
A D H
4.2.8 Spatial dependence of (N – N ) . 17
A D
4.2.9 Axial variations in (N – N ) . 18
A D
5 Deep level transient spectroscopy for the determination of impurity-centre
concentration . 18
5.1 General . 18
5.2 Equipment for DLTS method . 18
5.3 Sample selection and preparation for DLTS . 19
5.4 Measurements for the determination of impurity-centre concentration. 19
5.4.1 General . 19
5.4.2 DLTS signal as a function of temperature . 21
5.4.3 Calculation of (N – N ) . 21
A D
5.4.4 Corrections for equivalent circuit effects . 21
5.4.5 Corrections for high trap concentrations and for voltage pulse height . 23
ΔV
c
5.4.6 technique for measuring N . 23
T
V
p
5.5 Majority-carrier deep levels in p-type HPGe . 24
5.6 Majority-carrier deep levels in n-type HPGe . 25
5.7 Report . 26
6 Crystallographic properties . 26
6.1 General . 26
6.2 Crystallographic orientation . 26
6.3 Sample preparation . 26

61435 © IEC:2013(E) – 3 –
6.3.1 General . 26
6.3.2 Preferential etching . 26
6.3.3 Etching methods . 27
6.3.4 Etch-pit density . 27
6.3.5 Lineage . 27
6.3.6 Mosaic . 27
6.4 Report . 27
Annex A (informative) The Hall factor for n-type and p-type HPGe . 28
 
R R
АВ,СD AB,CD
 
Annex B (informative) Function f versus . 30
 
R R
BC,DA BC,DA
 
Bibliography . 31

Figure 1 – Samples . 12
Figure 2 – Examples of sample shapes . 18
Figure 3 – DLTS waveforms and gate timing . 20
ΔV
c
Figure 4 – waveforms . 24
V
p
Figure A.1 – Hall factor for n-type HPGe . 28
Figure A.2 – Hall factor for p-type HPGe . 29
 R  R
AB,CD
АВ,СD
 
Figure B.1 – Function f versus [21] . 30
 
R R
BC,DA BC,DA
 
Table 1 – Majority-carrier deep levels in p-type HPGe . 25

– 4 – 61435 © IEC:2013(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NUCLEAR INSTRUMENTATION –
HIGH-PURITY GERMANIUM CRYSTALS FOR RADIATION DETECTORS –
MEASUREMENT METHODS OF BASIC CHARACTERISTICS

FOREWORD
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International Standard IEC 61435 has been prepared by IEC technical committee 45: Nuclear
instrumentation.
This second edition cancels and replaces the first edition published in 1996 and constitutes a
technical revision.
The main technical changes with regard to the previous edition are as follows:
– Review the existing requirements.
– Update the terminology and definitions.
The text of this standard is based on the following documents:
FDIS Report on voting
45/754/FDIS 45/760/RVD
61435 © IEC:2013(E) – 5 –
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with th
...