IEC TS 62607-6-33:2025

IEC TS 62607-6-33 ®
Edition 1.0 2025-10
TECHNICAL
SPECIFICATION
Nanomanufacturing - Key control characteristics -
Part 6-33: Graphene-related products - Defect density of graphene: electron
energy loss spectroscopy
ICS 07.120  ISBN 978-2-8327-0795-1

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CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Environmental condition . 10
5 Sample . 11
5.1 General . 11
5.2 Preparation of TEM sample for graphene grown by CVD method . 11
5.3 Sample storage . 12
6 Measurement principle . 12
6.1 General . 12
6.2 Data interpretation . 13
7 Measurement procedure . 14
7.1 General . 14
7.2 Detector . 14
7.3 Description of the measurement procedure . 15
7.3.1 Transmission electron microscope alignment . 15
7.3.2 Measurement . 15
7.4 Defect density determination . 16
7.5 Report of the results . 17
Annex A (informative) Format of the test report . 18
Annex B (informative) Sampling plan . 20
B.1 General . 20
B.2 Sampling plan depending on substrate (product type) geometry . 20
B.2.1 Circular substrates . 20
B.2.2 Square substrates . 21
B.2.3 Irregular shaped substrates . 22
B.3 Sampling plan depending on TEM grid geometry . 23
B.3.1 General . 23
B.3.2 300 mesh TEM grid . 24
Annex C (informative) Determination of boundary for graphene and defects . 25
Annex D (informative) Applications, worked examples: Defect density measurement of
graphene grown on Cu substrate by CVD . 29
Bibliography . 33

Figure 1 – Preparation of TEM sample for graphene grown by CVD method. 12
Figure 2 – Electron energy loss spectra of pristine (top) and defective (bottom) graphene . 13
Figure 3 – Schematic diagram of defect density measurements by EELS . 14
Figure 4 – Schematic diagram of π*/σ* amplitude ratio calculation by spectral image . 16
Figure B.1 – Schematic of sample plan for circular substrates (in accordance with
IEC TS 62607-6-11:2022) . 21
Figure B.2 – Schematic of sample plan for square substrates (in accordance with
IEC TS 62607-6-11:2022) . 22
Figure B.3 – Example sampling plan for irregular sample (in accordance with
IEC TS 62607-6-11:2022) . 23
Figure B.4 – Schematic of sample plan for 300 mesh TEM grid . 24
Figure C.1 – π*/σ* amplitude map defined as a number or image . 27
Figure C.2 – Comparison of spectral backgrounds of graphene, defects, and boundary
values (π*/σ* amplitude) in the high-loss energy region . 28
Figure D.1 – Preparation of TEM specimens of CVD-grown graphene by direct transfer . 29
Figure D.2 – Measurement of defect density of graphene by STEM-EELS . 30

Table A.1 – Product identification (in accordance with the relevant blank detail
specification) . 18
Table A.2 – General material description (in accordance with the relevant blank detail
specification) . 18
Table A.3 – Measurement related information . 19
Table B.1 – Sampling plan for circular substrates (in accordance with
IEC TS 62607-6-11:2022) . 21
Table B.2 – Sampling plan for square sample (in accordance with IEC TS 62607-6-
11:2022) . 22
Table B.3 – Sampling plan for 300 mesh TEM grid . 24
Table D.1 – Product identification . 31
Table D.2 – General material description . 31
Table D.3 – Measurement related information . 31

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Nanomanufacturing - Key control characteristics -
Part 6-33: Graphene-related products - Defect density of graphene: electron
energy loss spectroscopy
FOREWORD
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IEC TS 62607-6-33 has been prepared by IEC technical committee 113: Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/913/DTS 113/932/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in the
above table.
The language used for the development of this Technical Specification is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available at
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