IEC TS 62607-6-28:2025

IEC TS 62607-6-28 ®
Edition 1.0 2025-09
TECHNICAL
SPECIFICATION
Nanomanufacturing - Key control characteristics -
Part 6-28: Graphene-related products - Number of layers for graphene films on a
substrate: Raman spectroscopy
ICS 07.120  ISBN 978-2-8327-0740-1

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CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms, definitions and abbreviated terms . 6
3.1 General terms . 7
3.2 Key control characteristics measured according to this standard. 8
3.3 Terms related to the measurement method . 9
3.4 Abbreviated terms. 10
4 Method A . 11
4.1 General . 11
4.1.1 Measurement principle . 11
4.1.2 Sample preparation method . 12
4.1.3 Description of measurement equipment and apparatus . 12
4.1.4 Ambient conditions during measurement . 12
4.2 Measurement procedure . 13
4.2.1 Calibration of measurement equipment . 13
4.2.2 Detailed description of the measurement procedure . 13
4.3 Data analysis and interpretation of results . 13
5 Method B . 14
5.1 General . 14
5.1.1 Measurement principle . 14
5.1.2 Sample preparation method . 15
5.1.3 Description of measurement equipment . 15
5.1.4 Ambient conditions during measurement . 15
5.2 Measurement procedure . 15
5.2.1 Calibration of measurement equipment . 15
5.2.2 Detailed description of the measurement procedure . 16
5.3 Data analysis and interpretation of results . 16
6 Test report . 17
6.1 Cover sheet . 17
6.2 Measurement information . 17
6.3 Sample information . 17
6.4 Test results . 17
Annex A (informative) Comparison of Method A and Method B . 18
Annex B (informative) Spectral characteristics of a typical Raman peak . 19
Annex C (informative) Calculation of I (Si) and I (Si) . 20
G 0
C.1 Optical interference model for the Raman intensity from the multi-layered
structures . 20
C.2 Calculation of I (Si) . 22
G
C.3 Calculation of I (Si) . 24
Annex D (informative) Theoretical values of I (Si)/I (Si) in Method B excited by
G 0
532 nm . 25
Annex E (informative) Test report . 26
Annex F (informative) Application example . 27
F.1 Application example 1 . 27
F.2 Application example 2 . 28
Bibliography . 31

Figure 1 – The schematic crystal structures . 8
Figure 2 – Raman spectra of G and 2D-peak of 1LG to 5LG and HOPG . 12
Figure 3 – Schematic diagram of I (Si)and I (Si) on SiO /Si substrate . 14
G 0 2
Figure 4 – The relationship of I (Si)/I (Si) and N (1 to 10) under 532 nm excitation . 15
G 0
Figure B.1 – Schematic diagram of the spectral characteristics of a typical Raman
peak. 19
Figure C.1 – Multiple reflection and optical interference in the multilayer structures. . 20

Table 1 – I (Si)/I (Si) of N (1 to 10) under 532 nm laser with = 90nm, NA = 0,50 . 16
h
G 0
SiO
Table A.1 – Comparison of Method A and Method B . 18
Table D.1 – Theoretical values of I (Si)/I (Si) in Method B excited by 532 nm . 25
G 0
Table E.1 – Test report . 26
Table F.1 – Test report by Method A. 27
Table F.2 – Test report by Method B. 29

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Nanomanufacturing -
Key control characteristics -
Part 6-28: Graphene-related products -
Number of layers for graphene films on a substrate: Raman spectroscopy

FOREWORD
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IEC TS 62607-6-28 has been prepared by IEC technical committee 113: Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/897/DTS 113/923/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 62607 series, published under the general title Nanomanufacturing
– Key control characteristics, can be found on the IEC website.
The committee has decided that the contents of this document w
...