IEC 60747-14-2:2000

INTERNATIONAL IEC
STANDARD
60747-14-2
First edition
2000-11
Semiconductor devices –
Part 14-2:
Semiconductor sensors – Hall elements
Dispositifs à semiconducteurs –
Partie 14-2:
Capteurs à semiconducteurs – Eléments à effet de Hall
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INTERNATIONAL IEC
STANDARD
60747-14-2
First edition
2000-11
Semiconductor devices –
Part 14-2:
Semiconductor sensors – Hall elements
Dispositifs à semiconducteurs –
Partie 14-2:
Capteurs à semiconducteurs – Eléments à effet de Hall
 IEC 2000  Copyright - all rights reserved
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– 2 – 60747-14-2  IEC:2000(E)
CONTENTS
Page
FOREWORD . 3
INTRODUCTION .4
Clause
1 General. 5
1.1 Scope . 5
1.2 Normative references. 5
1.3 Definitions. 5
1.4 Symbols. 6
2 Essential ratings and characteristics. 7
2.1 General. 7
2.2 Ratings (limiting values) . 8
2.3 Characteristics . 8
3 Measuring methods. 9
3.1 General. 9
3.2 Output Hall voltage (V ) . 9
H
3.3 Offset voltage (V ) . 11
o
3.4 Input resistance (R ) . 12
in
3.5 Output resistance (R ) . 13
out
3.6 Temperature coefficient of output Hall voltage (α ). 13
V
H
3.7 Temperature coefficient of input resistance (α ). 14
Rin
60747-14-2  IEC:2000(E) – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 14-2: Semiconductor sensors – Hall elements
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization
for Standardization (ISO) in accordance with conditions determined by agreement between the two
organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-14-2 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/158/FDIS 47E/171/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
The committee has decided that the contents of this publication will remain unchanged until 2005.
At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.

– 4 – 60747-14-2  IEC:2000(E)
INTRODUCTION
This part of IEC 60747 should be read in conjunction with IEC 60747-1. It provides basic
information on semiconductor
– terminology;
– letter symbols;
– essential ratings and characteristics;
– measuring methods;
– acceptance and reliability.
60747-14-2  IEC:2000(E) – 5 –
SEMICONDUCTOR DEVICES –
Part 14-2: Semiconductor sensors – Hall elements
1 General
1.1 Scope
This part of IEC 60747 provides standards for packaged semiconductor Hall elements which
utilize the Hall effect.
1.2 Normative references
The following normative documents contain provisions which, through reference in this text,
constitute provisions of this part of IEC 60747. For dated references, subsequent amendments
to, or revisions of, any of these publications do not apply. However, parties to agreements
based on this part of IEC 60747 are encouraged to investigate the possibility of applying the
most recent editions of the normative documents indicated below. For undated references, the
latest edition of the normative document referred to applies. Members of ISO and IEC maintain
registers of currently valid International Standards.
IEC 60747-1:1983, Semiconductor devices – Discrete devices and integrated circuits – Part 1:
General
IEC 61340-5-1:1998, Electrostatics – Part 5-1: Protection of electronic devices from electro-
static phenomena – General requirements
1.3 Definitions
For the purpose of this International Standard, the following definitions apply.
1.3.1
semiconductor Hall element
semiconductor device that generates the voltage upon application of a magnetic field with
magnetic flux density, being proportional to the control voltage (see below) and the magnetic
flux density
1.3.2
Hall mobility
electron mobility measured with the usage of the Hall effect
1.3.3
control current
current to be applied continuously to the input terminals of the device when the output
terminals are not connected to external circuit
1.3.4
control voltage
voltage to be applied continuously to the input terminals of the device when the output
terminals are not connected to external circuit

– 6 – 60747-14-2  IEC:2000(E)
1.3.5
offset voltage (or residual voltage)
voltage to be derived between the output terminals when a specified current or voltage is
applied to the input terminals of the device without magnetic field
1.3.6
output Hall voltage
the difference between the voltage, which is derived across the output terminals when a
specified current or voltage is applied to the input terminals of the device in a specified
magnetic field, and the offset voltage
1.3.7
residual ratio
the ratio of the offset voltage to the output Hall voltage
1.3.8
input resistance
resistance between the input terminals of the device when the output terminals are not
connected to external circuit
1.3.9
output resistance
resistance between the output terminals of the device when the input terminals are not
connected to external circuit
1.3.10
temperature coefficient of output Hall voltage
relative change in output Hall voltage referred to the change in temperature
1.3.11
temperature coefficient of input resistance
relative change in input resistance referred to the change in temperature
1.4 Symbols
1.4.1 Clauses 2,3 and 4 of IEC 60747-1, chapter V, apply.
For the field of packaged Hall elements, the following additional special subscripts are
recommended:
c control
o offset
HHall
in input
out output
60747-14-2  IEC:2000(E) – 7 –
Table 1 – Letter symbols
Name and designation Letter symbol Remarks
Hall mobility μ
H
Control current I
c
Control voltage V
c
Offset voltage or residual voltage V
o
Output Hall voltage V
H
Residual ratio V /V
o H
Input resistance R
in
Output resistance R
out
Temperature coefficient
of output Hall voltage α
VH
Temperature coefficient
of input resistance α
Rin
1.4.2 Terminals
The terminal numbers and their designation for packaged Hall elements are shown in figure 1
and table 2. The designation of the terminals is listed below. The (+) and (−) signs of the output
terminals assume that the magnetic line of force passes through from the top to the bottom of
the Hall element.
Table 2 – Terminal numbers
Terminal number Voltage/current
1V (+) or I (+)
c c
2V (+)
H
V (−) or I (−)
c c
V (−)
H
2 Essential ratings and characteristics
2.1 General
2.1.1 Element materials
Useful materials for Hall elements are semiconductor materials like GaAs, InSb, InAs, Si, etc.
Ratings of Hall elements depend on the element materials.
2.1.2 Handling precautions
Due to a rather thin layer of semiconductor sensing region, the devices may be irreversibly
damaged if an excessive voltage is allowed to build up, for example due to contact with
electrostatically charged persons, leakage currents from soldering irons, etc.
When handling the devices, the handling precautions given in IEC 60747-1, chapter IX,
clause 1, shall therefore be observed.

– 8 – 60747-14-2  IEC:2000(E)
2.2 Ratings (limiting values)
2.2.1 Temperatures
2.2.1.1 Minimum and maximum storage temperatures (T )
stg
2.2.1.2 Minimum and maximum operating temperatures (T )
opr
2.2.2 Bias
2.2.2.1 Maximum control current (I )
cmax
2.2.2.2 Maximum control voltage (V )
cmax
2.2.3 Derating curve
2.2.3.1 Control current derating curve
Maximum control current at each temperature shall be stated or be depicted in the form of a
figure.
2.2.3.2 Control voltage derating curve
Maximum control voltage at each temperature shall be stated or be depicted in the form of a
figure.
2.3 Characteristics
Characteristics are to be given at 25 °C, except where otherwise stated; other temperatures
should be taken from the list in IEC 60747-1, chapter VI, clause 5.
2.3.1 Unloaded electrical characteristics
2.3.1.1 Output Hall voltage (V )
H
Maximum and minimum values, at a specified magnetic flux density and control voltage or
current, at an operating temperature of 25 °C.
2.3.1.2 Input resistance (R )
in
Maximum and minimum values, at a specified voltage or current without any magnetic flux
density, at an operating temperature of 25 °C.
2.3.1.3 Output resistance (R )
out
Ma
...