EN 62276:2005

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EUROPEAN STANDARD EN 62276
NORME EUROPÉENNE
EUROPÄISCHE NORM December 2005

ICS 31.140
English version
Single crystal wafers
for surface acoustic wave (SAW) device appplications -
Specifications and measuring methods
(IEC 62276:2005)
Tranches monocristallines pour Einkristall-Wafer für Oberflächenwellen-
applications utilisant des dispositifs (OFW-)Bauelemente -
à ondes acoustiques de surface - Festlegungen und Messverfahren
Spécifications et méthodes de mesure (IEC 62276:2005)
(CEI 62276:2005)
This European Standard was approved by CENELEC on 2005-11-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in two official versions (English, German). A version in any other language
made by translation under the responsibility of a CENELEC member into its own language and notified to the
Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden,
Switzerland and United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2005 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.

Ref. No. EN 62276:2005 E
Foreword
The text of document 49/720/FDIS, future edition 1 of IEC 62276, prepared by IEC TC 49,
Piezoelectric and dielectric devices for frequency control and selection, was submitted to the
IEC-CENELEC parallel vote and was approved by CENELEC as EN 62276 on 2005-11-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2006-08-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2008-11-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62276:2005 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards
indicated:
IEC 60862-1 NOTE Harmonized as EN 60862-1:2003 (not modified).
IEC 60862-2 NOTE Harmonized as EN 60862-2:2002 (not modified).
IEC 60862-3 NOTE Harmonized as EN 60862-3:2003 (not modified).
IEC 61019-1 NOTE Harmonized as EN 61019-1:2005 (not modified).
IEC 61019-2 NOTE Harmonized as EN 61019-2:2005 (not modified).
__________
- 3 - EN 62276:2005
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.
NOTE Where an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
1) 2)
IEC 60758 - Synthetic quartz crystal - Specifications EN 60758 2005
and guide to the use
1)
IEC 60410 - Sampling plans and procedures for - -
inspection by attributes
1) 2)
ISO 4287 - Geometrical Product Specifications (GPS) EN ISO 4287 1998
- Surface texture: Profile method - Terms,
definitions and surface texture
parameters
1)
Undated reference.
2)
Valid edition at date of issue.

INTERNATIONAL IEC
STANDARD 62276
First edition
2005-05
Single crystal wafers for surface acoustic
wave (SAW) device applications –
Specifications and measuring methods

 IEC 2005  Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale V
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
For price, see current catalogue

– 2 – 62276  IEC:2005(E)
CONTENTS
FOREWORD.4
INTRODUCTION.6
1 Scope.7
2 Normative references .7
3 Terms and definitions .7
4 Requirements .13
4.1 Material specification.13
4.2 Wafer specifications .13
5 Sampling .16
5.1 Sampling .16
5.2 Sampling frequency.17
5.3 Inspection of whole population .17
6 Test methods .17
6.1 Diameter .17
6.2 Thickness.17
6.3 Dimension of OF .17
6.4 Orientation of OF.17
6.5 TV5 .17
6.6 Warp .18
6.7 TTV.18
6.8 Front surface defects.18
6.9 Inclusions.18
6.10 Back surface roughness .18
6.11 Orientation .18
6.12 Curie temperature .18
6.13 Lattice constant.18
7 Identification, labelling, packaging, delivery condition.18
7.1 Packaging .18
7.2 Labelling and identification .18
7.3 Delivery condition.19
8 Measurement of Curie temperature .19
8.1 General .19
8.2 DTA method .19
8.3 Dielectric constant method .19
9 Measurement of lattice constant (Bond method) .20
10 Measurement of face angle by X-ray .21
10.1 Measurement principle .21
10.2 Measurement method.22
10.3 Measuring surface orientation of wafer .22
10.4 Measuring OF flat orientation .22
10.5 Typical wafer orientations and reference planes .23
11 Visual inspections .23
11.1 Front surface inspection method.23

62276  IEC:2005(E) – 3 –
Annex A (normative) Expression using Euler angle description for piezoelectric
single crystals.24
A.1 Wafer orientation using Euler angle description .24

Annex B (informative) Manufacturing process for SAW wafers .27
B.1 Crystal growth methods .27
B.2 Standard mechanical wafer manufacturing .31

Bibliography.33

Figure 1 – Wafer sketch and measurement points for TV5 determination .9
Figure 2 – Schematic diagram of TTV .10
Figure 3 – Schematic diagram of warp .10
Figure 4 – Example of site distribution for LTV measurement. All sites have their
centres within the FQA.11
Figure 5 – LTV is a positive number and is measured at each site .11
Figure 6 – Schematic of a DTA system .19
Figure 7 – Schematic of a dielectric constant measurement system .20
Figure 8 – The Bond method.21
Figure 9 – Measurement method by X-ray.22
Figure 10 – Relationship between cut angle and lattice face .22
Figure A.1 – Definition of Euler angles to rotate coordinate system (X,Y,Z)
onto (x , x , x ).24
1 2 3
Figure A.2 – SAW wafer coordinate system .25
Figure A.3 – Relationship between the crystal axes, Euler angles,
and SAW orientation for some wafer orientations.26
Figure B.1 – Czochralski crystal growth method.27
Figure B.2 – Example of non-uniformity in crystals grown from different starting melt
compositions.29
Figure B.3 – Schematic of a vertical Bridgman furnace and example of temperature
distribution.30

Table 1 – Description of wafer orientations .12
Table 2 – Roughness, warp, TV5 and TTV specification limits .15
Table 3 – Crystal planes to determine surface and OF orientations.23
Table A.1 – Selected SAW substrate orientations and corresponding Euler angles .25

– 4 – 62276  IEC:2005(E)
INTERNAT
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