ASTM F1192-11

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of the standard as published by ASTM is to be considered the official document.
Designation:F1192–00 (Reapproved 2006) Designation:F1192–11
Standard Guide for the
Measurement of Single Event Phenomena (SEP) Induced by
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Heavy Ion Irradiation of Semiconductor Devices
This standard is issued under the fixed designation F1192; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
This standard has been approved for use by agencies of the Department of Defense.
1. Scope
1.1 This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single
event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z$ 2. This description specifically
excludes the effects of neutrons, protons, and other lighter particles that may induce SEP via another mechanism. SEP includes
any manifestation of upset induced by a single ion strike, including soft errors (one or more simultaneous reversible bit flips), hard
errors (irreversible bit flips), latchup (permanent(persistent high conducting state), transients induced in combinatorial devices
which may introduce a soft error in nearby circuits, power field effect transistor (FET) burn-out and gate rupture. This test may
be considered to be destructive because it often involves the removal of device lids prior to irradiation. Bit flips are usually
associated with digital devices and latchup is usually confined to bulk complementary metal oxide semiconductor, (CMOS)
devices, but heavy ion induced SEP is also observed in combinatorial logic programmable read only memory, (PROMs), and
certain linear devices that may respond to a heavy ion induced charge transient. Power transistors may be tested by the procedure
called out in Method 1080 of MIL STD 750.
1.2 The procedures described here can be used to simulate and predict SEP arising from the natural space environment,
including galactic cosmic rays, planetary trapped ions, and solar flares. The techniques do not, however, simulate heavy ion beam
effects proposed for military programs. The end product of the test is a plot of the SEP cross section (the number of upsets per
unit fluence) as a function of ion LET (linear energy transfer,transfer or ionization deposited along the ion’s path through the
semiconductor). This data can be combined with the system’s heavy ion environment to estimate a system upset rate.
1.3 Although protons can cause SEP, they are not included in this guide. A separate guide addressing proton induced SEP is
being considered.
1.4 The values stated in International System of Units (SI) SI units are to be regarded as standard. No other units of
measurement are included in this guide. standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
limitations prior to use.
2. Referenced Documents
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2.1 Military Standard:
750 Method 1080
3. Terminology
3.1 Definitions of Terms Specific to This Standard:
3.1.1 DUT—device under test.
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3.1.2 fluence—the flux integrated over time, expressed as ions/cm .
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3.1.3 flux—the number of ions/s passing through a one cm area perpendicular to the beam (ions/cm -s).
3.1.4 LET—the linear energy transfer, also known as the stopping power dE/dx, is the amount of energy deposited per unit
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length along the path of the incident ion, typically normalized by the target density and expressed as MeV-cm /mg.
3.1.4.1 Discussion—LET values are obtained by dividing the energy per unit track length by the density of the irradiated
medium. Since the energy lost along the track generates electron-hole pairs, one can also express LETas charge deposited per unit
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This guide is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation
Effects.
Current edition approved JulyOct. 1, 2006.2011. Published July 2006.October 2011. Originally approved in 1988. Last previous edition approved in 20002006 as
F1192–00.F1192–00(2006). DOI: 10.1520/F1192-00R06.10.1520/F1192-11.
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