oSIST prEN IEC 62631-2-3:2023

SLOVENSKI STANDARD
oSIST prEN IEC 62631-2-3:2023
01-april-2023
Dielektrične in uporovne lastnosti trdnih izolacijskih materialov - 2-3. del:
Določanje relativne permitivnosti in faktorja dielektričnih izgub (metode AC) -
Metoda kontaktne elektrode za izolacijske folije
Dielectric and resistive properties of solid insulating materials - Part 2-3: Determination of
relative permittivity and dielectric dissipation factor (AC methods) - Contact electrode
method for insulating films
Ta slovenski standard je istoveten z: prEN IEC 62631-2-3:2023
ICS:
17.220.99 Drugi standardi v zvezi z Other standards related to
elektriko in magnetizmom electricity and magnetism
29.035.01 Izolacijski materiali na Insulating materials in
splošno general
oSIST prEN IEC 62631-2-3:2023 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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oSIST prEN IEC 62631-2-3:2023

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oSIST prEN IEC 62631-2-3:2023

112/603/CDV

COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 62631-2-3 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2023-02-03 2023-04-28
SUPERSEDES DOCUMENTS:
112/580/CD, 112/601/CC

TC 112 : EVALUATION AND QUALIFICATION OF ELECTRICAL INSULATING MATERIALS AND SYSTEMS
IEC
SECRETARIAT: SECRETARY:
Germany Mr Bernd Komanschek
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:

TC 15
Other TC/SCs are requested to indicate their interest, if
any, in this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
The attention of IEC National Committees, members of
CENELEC, is drawn to the fact that this Committee Draft
for Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
CENELEC online voting system.

This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of
• any relevant patent rights of which they are aware and to provide supporting documentation,
• any relevant “in some countries” clauses to be included should this proposal proceed. Recipients are
reminded that the enquiry stage is the final stage for submitting "in some countries" clauses. See
AC/22/2007.

TITLE:
Dielectric and resistive properties of solid insulating materials - Part 2-3: Determination of
relative permittivity and dielectric dissipation factor (AC methods) - Contact electrode method
for insulating films

PROPOSED STABILITY DATE: 2027

NOTE FROM TC/SC OFFICERS:


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1 CONTENTS
2
3 FOREWORD . 3
4 INTRODUCTION . 5
5 1 Scope . 6
6 2 Normative references . 6
7 3 Terms definitions and abbreviated terms . 6
8 4 Principle of method . 8
9 5 The electrodes. 9
10 6 Samples . 11
11 7 Measuring voltage . 11
12 8 The conditions for measuring environment. 11
13 9 The measurement of thickness for films . 12
14 10 Procedure of measurement . 12
15 11 Report . 12
16 12 Repeatability, reproducibility and replicability . 13
17 Annex A (informative)  Correction method of measured permittivity and dielectric
18 dissipation factor for the sample with scabrous surface . 14
19 A.1 General . 14
20 A.2 Physical model. 14
21 A.3 The relationship between the measured permittivity and the real permittivity . 15
22 A.4 The relationship between the measured dielectric dissipation factor and the
23 real dielectric dissipation factor . 21
24 A.5 The method of correction for the sample with scabrous surface . 26
25 Annex B (informative) Suggestions for the manufacture of electrodes . 27
26 B.1 General . 27
27 B.2 Materials . 27
28 B.3 Manufacture of electrodes . 27
29 B.4 The evaluation methods on the flatness and the roughness . 27
30 Bibliography . 28
31
32 Figure 1 – The diagram of the system with three electrodes D1: the diameter of the
33 measuring electrode M D2: the inner diameter of the guarded electrode G D3: the
34 outer diameter of the guarded electrode G D4: the diameter of the high voltage
35 electrode H. . 10
36 Figure A.1 – The schematic diagram of the profile including scabrous surfaces of
37 sample and polish flat electrodes, with the density thickness and apparent thickness
38 (mechanical thickness) . 14
39 Figure A.2 – Physical model for scabrous surfaces of sample and polished flat
40 electrodes, d0 is the thickness of equivalent gap . 14
41 Figure A.3 – Equivalent circuit with the sample, the gap and the electrodes . 15
42 Figure A.4 – The relationship among the measured permittivity, the real permittivity,
43 the void ratio and the contact ratio . 21
44 Figure A.5 –The relationship among the measured dielectric dissipation factor, the real
45 dielectric dissipation factor, the void ratio and the contact ratio . 26
46

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47 INTERNATIONAL ELECTROTECHNICAL COMMISSION
48 ____________
49 DIELECTRIC AND RESISTIVE PROPERTIES OF SOLID INSULATING
50 MATERIALS -
51 Part 2-3: Determination of relative permittivity and dielectric dissipation
52 factor (AC methods) - Contact electrode method for insulating films
53
54
55 FOREWORD
56 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
57 all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
58 co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
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60 Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
61 preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
62 may participate in this preparatory work. International, governmental and non-governmental organizations liaising
63 with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
64 Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
65 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
66 consensus of opinion on the relevant subjects since each technical committee has representation from all
67 interested IEC National Committees.
68 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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82 expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
83 Publications.
84 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
85 indispensable for the correct application of this publication.
86 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
87 rights. IEC shall not be held responsible for identifying any or all such patent rights.
88 International Standard IEC 62631-2-3 has been prepared by IEC technical committee 112:
89 Evaluation and qualification of electrical insulating materials and systems.
90 The text of this International Standard is based on the following documents:
FDIS Report on voting
112/XX/FDIS 112/XX/RVD
91
92 Full information on the voting for the approval of this International Standard can be found in the
93 report on voting indicated in the above table.
94 This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

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95 The committee has decided that the contents of this document will remain unchanged until the
96 stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
97 the specific document. At this date, the document will be
98 • reconfirmed,
99 • withdrawn,
100 • replaced by a revised edition, or
101 • amended.
102
103 The National Committees are requested to note that for this document the stability date
104 is 2027.
105 THIS TEXT IS INCLUDED FOR THE INFORMATION OF THE NATIONAL COMMITTEES AND WILL BE DELETED
106 AT THE PUBLICATION STAGE.
107

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108 INTRODUCTION
109 Measuring the relative permittivity and the dielectric dissipation factor (tan δ) of insulating
110 polymer film with very thin thickness (about 10-100 μm) without any additional layer is important
111 for insulation applications. Now, there is lack of suitable technology and standard for a single
112 layer polymer film with very thin thickness. Using multilayer polymer films with 20-50 layers it
113 can be feasible to get the average value of the relative permittivity and dielectric dissipation
114 factor of insulating polymer film, but the effect of airgap inside may not be ignored. With
115 metalized electrodes on the surface of polymer film, it is possible to get acceptable results of
116 the relative permittivity and dielectric dissipation factor of insulating polymer film in research
117 laboratory. In this standard, the measuring technology and the test method are provided for
118 relative permittivity and dielectric dissipation factor of insulating polymer film with very thin
119 thickness without any additional layer or metallization on the sample, under technical frequency.
120

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121 DIELECTRIC AND RESISTIVE PROPERTIES OF SOLID INSULATING
122 MATERIALS –
123
124 Part 2-3: Determination of relative permittivity and dielectric dissipation
125 factor (AC methods) - Contact electrode method for insulating films
126
127 1 Scope
128 This International Standard of IEC 62631-2-3 specifies the measuring technology and the test
129 method for relative permittivity and dielectric dissipation factor of insulating polymer film with
130 very thin thickness without any additional layer and metallization on the sample surface. The
131 adaptive thickness range is about from 10 to 100 μm. The proposed frequency is the power
132 frequency (50 or 60 Hz), and it is also suitable in the technical frequency range from 1 Hz to
133 1 MHz.
134 2 Normative references
135 IEC 60050-212:2010, International Electrotechnical Vocabulary — Part 212: Electrical
136 insulating solids, liquids, and gases
137 IEC 62631-2-1:2018, Dielectric and resistive properties of solid insulating materials - Part 2-1:
138 Relative permittivity and dissipation factor-Technical frequency （0.1 Hz to 10 MHz) – AC
139 methods
140 ISO 4593:1993, Plastics — Film and sheeting — Determination of thickness by mechanical
141 scanning
142 IEC 60674-2:2019, Specification for plastic films for electrical purposes — Part 2: Methods of
143 test
144 ISO 14644-1:2015, Cleanrooms and associated controlled environments — Part 1:
145 Classification of air cleanliness by particle concentration
146 ISO 21920-2:2021, Geometrical product specifications (GPS) — Surface texture: Profile — Part
147 2: Terms, definitions and surface texture parameters
148 ISO 25178-2:2012, Geometrical product specifications (GPS) — Surface texture: Areal — Part
149 2: Terms, definitions and surface texture parameters
150 ISO 3534-1:2006, Statistics — Vocabulary and symbols —Part 1: General statistical terms and
151 terms used in probability
152 ISO 3434-2:2006, Statistics — Vocabulary and symbols —Part 2: Applied statistics
153 ISO 3534-3:2013, Statistics — Vocabulary and symbols —Part 3: Design of experiments
154 3 Terms definitions and abbreviated terms
155 3.1 Terms and definitions
156
157 3.1.1 thin insulating film
158 an insulating polymer film without any additional layer, with 10 to 100 μm uniform thickness,
159 planar, even and smooth.

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160 3.1.2 AC bridge
161 an instrument to use balance method to measure the capacitance and loss of capacitor sample
162 under AC voltage, for example, a capacitor bridge.
163 Note 1 to entry: Usually, it works under power frequency with very high accuracy and with low applied
164 voltage.
165 Note 2 to entry: In some special case, it is also possible to work under technical frequency.
166 3.1.3 impendence material analyzer
167 an instrument to use AC current method to measure the capacitance and dielectric loss of a
168 capacitor.
169 Note 1 to entry: It works under a relatively low voltage and with large band range, but its accuracy is
170 usually relatively low.
171 Note 2 to entry: It uses five terminals to measure the device parameters so that it needs a suitable adaptor
172 for the three electrodes sample.
173 3.1.4 power frequency
174 the frequency used for power system, is usually at 50 Hz or 60 Hz.
175 3.1.5 technical frequency
176 the frequency for technical application, is usually from 1 Hz to 1 MHz.
177 3.1.6 measuring voltage
178 the voltage applied on the measuring sample during the measurement, should be lower than
179 the voltage induced by partial discharge.
180 3.1.7 apparent thickness (mechanical thickness)
181 the thickness of sample measured by a mechanical apparatus, which is equivalent to “bulking
182 thickness” in IEC 60674-2.
183 3.1.8 density thickness
184 the thickness of sample measured from the density of sample, which is equivalent to “gravimetric
185 thickness” in IEC 60674-2.
186 3.1.9 void ratio α
187 the percentage increase between the apparent thickness and the density thickness, which is
188 dependent on the surface roughness.
189 Note 1 to entry: For the sample with scabrous surface, the apparent thickness and the density
190 thickness are different.
191 Note 2 to entry: The void ratio α (%) is defined by the following formula:
dd−
xd
192 α ⋅ 100( %)    (1)
d
x
193 where,
194 d is the apparent thickness of sample in μm;
x
195 d is the density thickness of sample in μm.
d
=

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196 Note 3 to entry: The apparent thickness and the density thickness should be measured by using
197 the same sample in accordance with ISO 4593.
198 3.1.10 contact ratio η
199 the percentage ratio of contact area over the total area.
200 Note 1 to entry: For the sample with scabrous surface, it cannot make perfect contact with the
201 high flatness and low roughness surface of electrode.
202 Note 2 to entry: It is dependent on the sample surface roughness and is defined by the following
203 formula:
cont act ar ea
204     (2)
η ⋅ 100 %
( )
t ot al ar ea
205 where, η is the contact ratio in %.
206 3.1.11 surface roughness of sample R
a
207 is defined by the following formula according to ISO 21920-2:
l
e
1
208 R = zx dx     (3)
( )
a
∫
l
0
e
209 where
210 l is the evaluation length of the sample profile,
e
211 z(x) is the function that described the height of the assessed scale-limited profile,
212 R is the arithmetic mean height in μm of the sample profile, also called the surface roughness
a
213 of sample in this standard.
214 3.2 Abbreviated terms
215 AC - Alternating Current
216 α – void ratio
217 η - contact ratio
218 R - surface roughness of sample in μm
a
219 4 Principle of method
220 4.1 The principle of measurement

221 The complex capacitance of the dielectric sample with electrode can be obtained by using
C
x
222 an AC bridge or an impedance/material analyzer. For planar, even and smooth film sample, the


223 relationship between the complex permittivity ε and the complex capacitance C can be
x x
224 shown as follows,
=

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
εε S
0 x

225 C = ,    (4)
x
d
x
d ε
226 where, is the thickness of planar film sample, S is the area of electrode and is the
x 0
227 electric constant (also called permittivity of vacuum). Therefore, the complex permittivity of the
228 dielectric materials can be derived as,
d
x


229 ε = C .    (5)
x x
ε S
0
ε ′ ′′
230 The relationship of the complex permittivity with real part ε , imaginary part ε and
x
231 dielectric dissipation factor tanδ (also marked D ) can be shown as follows,
x
εε ′+ jε′′

x

′′
 ε
232 tanδ= ,    (6)

′
ε

′
εε=
x

233 where, the real part ε′is called relative permittivity ε , and the imaginary part ε′′ is called
x
234 dielectric loss index. By using an AC bridge, the dielectric dissipation factor tanδ and the real

C ε
235 part of complex capacitance C can be measured directly. The relative permittivity of
x x x
236 dielectric material can be obtained from
d
x
237     (7)
ε = C
x x
ε S
0
238 4.2 The edge effect of electrodes
239 Due to the limitation of mechanical manufacture, the gap between the measuring electrode and
240 the guard ring will be bigger than 0.5 mm. Generally, there is edge effect of electrodes in the
241 dielectr
...