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SIST EN 150007:2002

(Main)

Blank Detail Specification: Case-rated bipolar transistors for high frequency amplification

Blank Detail Specification: Case-rated bipolar transistors for high frequency amplification

D114/033: Withdrawn

Vordruck für Bauartspezifikation: Auf Gehäusetemperatur bezogene Transistoren für HF-Verstärkung

Spécification particulière cadre: Transistors bipolaires à température ambiante spécifiée, pour amplification de haute fréquence

Blank detail specification: Case-rated bipolar transistors for high frequency amplification

General Information

Status
Withdrawn
Publication Date
31-Aug-2002
Withdrawal Date
20-Oct-2009
ICS
31.080.30 - Transistors
Technical Committee
I11 - Imaginarni 11
Current Stage
9900 - Withdrawal (Adopted Project)
Start Date
19-Oct-2009
Due Date
11-Nov-2009
Completion Date
21-Oct-2009
Ref Project
EN 150007:1991 - Blank Detail Specification: Case-rated bipolar transistors for high frequency amplification

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2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Blank detail specification: Case-rated bipolar transistors for high frequency amplificationVordruck für Bauartspezifikation: Auf Gehäusetemperatur bezogene Transistoren für HF-VerstärkungSpécification particulière cadre: Transistors bipolaires à température ambiante spécifiée, pour amplification de haute fréquenceBlank Detail Specification: Case-rated bipolar transistors for h
...

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