Photovoltaic cells - Part 4: Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells

IEC TS 63202-4:2022 describes procedures for measuring the light and elevated temperature induced degradation (LETID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight. The requirements for measuring initial light induced degradation (LID) of crystalline silicon PV cells are covered by IEC 63202-1, where LID degradation risk of PV cells under moderate temperature and initial durations within termination criteria of 20 kWh·m-2 are evaluated. The procedures described in this document are to evaluate the degradation behaviour of PV cells under elevated temperature and longer duration of light irradiation. The procedures described in this document can be used to detect the LETID risks of PV cells [2],[3] and to judge the effectiveness of LETID mitigation measures, e.g. quick test for production monitoring, thus helping improve the energy yield of PV modules.

General Information

Status
Published
Publication Date
27-Jun-2022
Drafting Committee
Current Stage
PPUB - Publication issued
Start Date
25-Jul-2022
Completion Date
28-Jun-2022
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IEC TS 63202-4 ®
Edition 1.0 2022-06
TECHNICAL
SPECIFICATION
colour
inside
Photovoltaic cells –
Part 4: Measurement of light and elevated temperature induced degradation of
crystalline silicon photovoltaic cells
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IEC TS 63202-4 ®
Edition 1.0 2022-06
TECHNICAL
SPECIFICATION
colour
inside
Photovoltaic cells –
Part 4: Measurement of light and elevated temperature induced degradation of

crystalline silicon photovoltaic cells

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 27.160 ISBN 978-2-8322-3924-7

– 2 – IEC TS 63202-4:2022 © IEC 2022
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 6
4 Apparatus . 6
5 Sampling . 6
6 Measurement . 7
7 Report . 8
Annex A (informative) LETID behaviour . 9
Bibliography . 10

Figure A.1 – Dependence of ΔP on cumulative irradiation dose . 9
max
Table A.1 – Summary of the LETID behaviours for the curves in Figure A.1 . 9

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
PHOTOVOLTAIC CELLS –
Part 4: Measurement of light and elevated temperature induced
degradation of crystalline silicon photovoltaic cells

FOREWORD
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IEC TS 63202-4 has been prepared by IEC technical committee 82: Solar photovoltaic energy
systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
82/1994/DTS 82/2043/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.

– 4 – IEC TS 63202-4:2022 © IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at https://www.iec.ch/members_experts/refdocs. The main document types developed by IEC
are described in greater detail at https://www.iec.ch/standardsdev/publications.
A list of all parts in the IEC 63202 series, published under the general title Photovoltaic cells,
can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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contents. Users should therefore print this document using a colour printer.

PHOTOVOLTAIC CELLS –
Part 4: Measurement of light and elevated temperature induced
degradation of crystalline silicon photovoltaic cells

1 Scope
This part of IEC 63202 describes procedures for measuring the light and elevated temperature
induced degradation (LETID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight.
The requirements for measuring initial light induced degradation (LID) of crystalline silicon PV
cells are covered by IEC 63202-1, where LID degradation risk of PV cells under moderate
-2
temperature and initial durations within termination criteria of 20 kWh·m are evaluated.
Energy yield of PV modules is significantly affected by the inherent LETID performance of the
PV cells, which are used in it. This LETID performance includes LID and other degradation
mechanisms. The procedures described in this document are to evaluate the degradation
behaviour of PV cells under elevated temperature and longer duration of light irradiation. The
degradation rate, maximum degradation ratio and possible regeneration are determined by
comparing the cell maximum power, Pmax, at Standard Test Conditions (STC) during the light
irradiation process with respect to the initial P . A P degradation profile with respect to
max max
cumulative irradiation is presented, which helps cell manufacturer to judge whether the cells
are prone to LETID before being assembled into modules.
Different from some other standards which separate boron-oxygen induced LID from LETID or
are limited to charge carrier injection induced degradation [1] , the overall degradation under
light irradiation at elevated temperature is included in the procedures described in this
document. The overall degradation, determined using this procedure, is more relevant to
various degradation mechanisms under field condition and gives a better evaluation of LETID
-2
risk. For cells with strong initial degradation within around 20 kWh·m , the procedures to
measure initial light induced degradation (LID) in IEC 63202-1 can be applied. Compared with
module LETID detection method described in IEC TS 63342, higher injection level under open-
circuit condition is used to shorten the test duration, while the temperature is identical.
The procedures described in this document can be used to detect the LETID risks of PV cells
[2],[3] and to judge the effectiveness of LETID mitigation measures, e.g. quick test for
production monitoring, thus helping improve the energy yield of PV modules.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60904-1, Photovoltaic devices – Part 1: Measurement of photovoltaic current-voltage
characteristics
IEC 60904-2, Photovoltaic devices – Part 2: Requirements for photovoltaic reference devices
___________
Numbers in square brackets refer to the Bibliography.

– 6 – IEC TS 63202-4:2022 © IEC 2022
IEC 60904-9, Photovoltaic devices – Part 9: Classification of solar simulator characteristics
IEC TS 61836, Solar photovoltaic energy systems – Terms, definitions and symbols
IEC 63202-1:2019, Photovoltaic cells – Part 1: Measurement of light-induced degradation of
crystalline silicon photovoltaic cells
IEC TS 63202-2:2021, Photovoltaic cells – Part 2: Electroluminescence imaging of crystalline
silicon solar cells
IEC TS 63342, Light and elevated temperature induced degradation (LETID) test for c-Si
Photovoltaic (PV) modules: Detection
3 Terms and definitions
For the purposes of this document, the terms and definitions in IEC TS 61836 and IEC 63202-1
apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
4 Apparatus
The following apparatus are required to perform the LETID test defined in this document.
a) A light soaking apparatus with temperature controller that meets following requirements:
1) one or more irradiance sensors (meeting the requirements of IEC 60904-2) to monitor
the cumulative irradiance;
2) the means to mount test cells co-planar with the irradiance sensors;
o
3) the capability to control cell temperature in the range of (75 ± 2) C during the light
-2
irradiation with an irradiance of (1 000 ± 50) W·m ;
4) relative humidity ≤ 50 %;
5) internal air shall
...

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