Photovoltaic cells - Part 4: Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells

IEC TS 63202-4:2022 describes procedures for measuring the light and elevated temperature induced degradation (LETID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight. The requirements for measuring initial light induced degradation (LID) of crystalline silicon PV cells are covered by IEC 63202-1, where LID degradation risk of PV cells under moderate temperature and initial durations within termination criteria of 20 kWh·m-2 are evaluated. The procedures described in this document are to evaluate the degradation behaviour of PV cells under elevated temperature and longer duration of light irradiation. The procedures described in this document can be used to detect the LETID risks of PV cells [2],[3] and to judge the effectiveness of LETID mitigation measures, e.g. quick test for production monitoring, thus helping improve the energy yield of PV modules.

General Information

Status
Published
Publication Date
27-Jun-2022
Drafting Committee
WG 8 - TC 82/WG 8
Current Stage
PPUB - Publication issued
Start Date
28-Jun-2022
Completion Date
25-Jul-2022

Overview

IEC TS 63202-4:2022 is an international technical specification developed by the International Electrotechnical Commission (IEC) that addresses the measurement of light and elevated temperature induced degradation (LETID) in crystalline silicon photovoltaic (PV) cells. This standard outlines detailed procedures to evaluate the degradation behavior of PV cells under simulated sunlight at elevated temperatures over extended light exposure periods. LETID is a critical factor influencing the long-term performance and energy yield of PV modules.

This document complements IEC 63202-1, which focuses on initial light-induced degradation (LID) at moderate temperatures and shorter durations. In contrast, IEC TS 63202-4 extends these evaluations to higher temperatures and longer-term exposure, offering a comprehensive method to assess LETID risks and the effectiveness of mitigation strategies. The standard is essential for PV cell manufacturers aiming to ensure product reliability and optimize energy output.

Key Topics

  • Measurement Procedures: Defines the methodology for testing LETID by exposing crystalline silicon PV cells to controlled irradiance (approximately 1000 W·m⁻²) and elevated temperature (~75 °C) in a simulated sunlight environment.
  • Degradation Evaluation: Describes how to measure maximum power (Pmax), open-circuit voltage (VOC), and short-circuit current (ISC) before, during, and after light soaking to quantify degradation through cumulative irradiation doses.
  • Test Equipment Requirements:
    • Light soaking apparatus with precise temperature control and irradiance monitoring (IEC 60904 series referenced).
    • Solar simulators compliant with IEC 60904-9 standards, capable of steady-state and reliable irradiance levels.
    • Electroluminescence (EL) imaging systems to detect cell damage or abnormalities during repeated handling.
  • Sampling Protocols: Recommends testing a minimum of 20 randomly selected PV cells from a production batch, stored under controlled conditions to avoid pre-test contamination or unintended degradation.
  • Data Analysis & Reporting: Provides formulas to calculate degradation ratios in power and voltage, enabling manufacturers to build degradation profiles over time and significant light exposure doses (up to 168 kWh·m⁻²).
  • LETID Risk Identification: The measurement process helps identify cells prone to LETID and evaluates mitigation strategies, contributing directly to improved module energy yield.

Applications

  • PV Cell Manufacturing: Manufacturers can apply this standard to screen production batches, identifying cells susceptible to LETID and improving product quality through early detection.
  • Quality Control & Production Monitoring: The quick test procedures support inline production checks, enabling timely interventions and optimizing PV cell performance stability.
  • Energy Yield Enhancement: By accurately measuring degradation under realistic, elevated temperature conditions, stakeholders can better predict module performance in the field and adopt effective LETID mitigation methods.
  • Research & Development: Researchers developing new crystalline silicon PV technologies can use IEC TS 63202-4 to evaluate degradation mechanisms, benchmark materials, and improve cell designs.
  • Module Reliability Testing: The procedures serve to verify that cells integrated into PV modules meet durability expectations concerning LETID under operational stresses.

Related Standards

  • IEC 63202-1: Measurement of initial light induced degradation (LID) of crystalline silicon photovoltaic cells, focusing on moderate temperatures and short-term irradiance exposure.
  • IEC 60904 Series: Covers measurement techniques and requirements for photovoltaic devices:
    • IEC 60904-1: Measurement of current-voltage (I-V) characteristics.
    • IEC 60904-2: Requirements for photovoltaic reference devices.
    • IEC 60904-9: Classification of solar simulator characteristics.
  • IEC TS 63202-2: Electroluminescence imaging of crystalline silicon solar cells-used in conjunction for defect detection during degradation testing.
  • IEC TS 63342: Light and elevated temperature induced degradation (LETID) test for crystalline silicon PV modules-describes methods for module-level degradation detection under elevated temperature and illumination conditions.
  • IEC TS 61836: Solar photovoltaic energy systems-provides key terms, definitions, and symbols relevant to PV technology.

By adhering to IEC TS 63202-4:2022, stakeholders across the photovoltaic industry can implement robust, internationally harmonized methods for LETID measurement, supporting enhanced PV cell reliability, consistent energy production, and accelerated innovation in solar technologies.

Technical specification

IEC TS 63202-4:2022 - Photovoltaic cells - Part 4: Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells

English language
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Frequently Asked Questions

IEC TS 63202-4:2022 is a technical specification published by the International Electrotechnical Commission (IEC). Its full title is "Photovoltaic cells - Part 4: Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells". This standard covers: IEC TS 63202-4:2022 describes procedures for measuring the light and elevated temperature induced degradation (LETID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight. The requirements for measuring initial light induced degradation (LID) of crystalline silicon PV cells are covered by IEC 63202-1, where LID degradation risk of PV cells under moderate temperature and initial durations within termination criteria of 20 kWh·m-2 are evaluated. The procedures described in this document are to evaluate the degradation behaviour of PV cells under elevated temperature and longer duration of light irradiation. The procedures described in this document can be used to detect the LETID risks of PV cells [2],[3] and to judge the effectiveness of LETID mitigation measures, e.g. quick test for production monitoring, thus helping improve the energy yield of PV modules.

IEC TS 63202-4:2022 describes procedures for measuring the light and elevated temperature induced degradation (LETID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight. The requirements for measuring initial light induced degradation (LID) of crystalline silicon PV cells are covered by IEC 63202-1, where LID degradation risk of PV cells under moderate temperature and initial durations within termination criteria of 20 kWh·m-2 are evaluated. The procedures described in this document are to evaluate the degradation behaviour of PV cells under elevated temperature and longer duration of light irradiation. The procedures described in this document can be used to detect the LETID risks of PV cells [2],[3] and to judge the effectiveness of LETID mitigation measures, e.g. quick test for production monitoring, thus helping improve the energy yield of PV modules.

IEC TS 63202-4:2022 is classified under the following ICS (International Classification for Standards) categories: 27.160 - Solar energy engineering. The ICS classification helps identify the subject area and facilitates finding related standards.

You can purchase IEC TS 63202-4:2022 directly from iTeh Standards. The document is available in PDF format and is delivered instantly after payment. Add the standard to your cart and complete the secure checkout process. iTeh Standards is an authorized distributor of IEC standards.

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IEC TS 63202-4 ®
Edition 1.0 2022-06
TECHNICAL
SPECIFICATION
colour
inside
Photovoltaic cells –
Part 4: Measurement of light and elevated temperature induced degradation of
crystalline silicon photovoltaic cells
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IEC TS 63202-4 ®
Edition 1.0 2022-06
TECHNICAL
SPECIFICATION
colour
inside
Photovoltaic cells –
Part 4: Measurement of light and elevated temperature induced degradation of

crystalline silicon photovoltaic cells

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 27.160 ISBN 978-2-8322-3924-7

– 2 – IEC TS 63202-4:2022 © IEC 2022
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 6
4 Apparatus . 6
5 Sampling . 6
6 Measurement . 7
7 Report . 8
Annex A (informative) LETID behaviour . 9
Bibliography . 10

Figure A.1 – Dependence of ΔP on cumulative irradiation dose . 9
max
Table A.1 – Summary of the LETID behaviours for the curves in Figure A.1 . 9

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
PHOTOVOLTAIC CELLS –
Part 4: Measurement of light and elevated temperature induced
degradation of crystalline silicon photovoltaic cells

FOREWORD
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IEC TS 63202-4 has been prepared by IEC technical committee 82: Solar photovoltaic energy
systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
82/1994/DTS 82/2043/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.

– 4 – IEC TS 63202-4:2022 © IEC 2022
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A list of all parts in the IEC 63202 series, published under the general title Photovoltaic cells,
can be found on the IEC website.
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PHOTOVOLTAIC CELLS –
Part 4: Measurement of light and elevated temperature induced
degradation of crystalline silicon photovoltaic cells

1 Scope
This part of IEC 63202 describes procedures for measuring the light and elevated temperature
induced degradation (LETID) of crystalline silicon photovoltaic (PV) cells in simulated sunlight.
The requirements for measuring initial light induced degradation (LID) of crystalline silicon PV
cells are covered by IEC 63202-1, where LID degradation risk of PV cells under moderate
-2
temperature and initial durations within termination criteria of 20 kWh·m are evaluated.
Energy yield of PV modules is significantly affected by the inherent LETID performance of the
PV cells, which are used in it. This LETID performance includes LID and other degradation
mechanisms. The procedures described in this document are to evaluate the degradation
behaviour of PV cells under elevated temperature and longer duration of light irradiation. The
degradation rate, maximum degradation ratio and possible regeneration are determined by
comparing the cell maximum power, Pmax, at Standard Test Conditions (STC) during the light
irradiation process with respect to the initial P . A P degradation profile with respect to
max max
cumul
...

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