EN 62373:2006

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EUROPEAN STANDARD
EN 62373
NORME EUROPÉENNE
August 2006
EUROPÄISCHE NORM
ICS 31.080
English version
Bias-temperature stability test for
metal-oxide, semiconductor, field-effect transistors
(MOSFET)
(IEC 62373:2006)
Essai de stabilité de température en Stabilitätsprüfung unter
polarisation pour transistors à effet de Temperatur-Spannungs-Beanspruchung
champ métal-oxyde-semiconducteur für Feldeffekttransistoren mit
(MOSFET) Metalloxid-Halbleiter (MOSFET)
(CEI 62373:2006) (IEC 62373:2006)

This European Standard was approved by CENELEC on 2006-08-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62373:2006 E
Foreword
The text of document 47/1862/FDIS, future edition 1 of IEC 62373, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62373 on 2006-08-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2007-05-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-08-01
__________
Endorsement notice
The text of the International Standard IEC 62373:2006 was approved by CENELEC as a European
Standard without any modification.
__________
NORME CEI
INTERNATIONALE
IEC
INTERNATIONAL
Première édition
STANDARD
First edition
2006-07
Essai de stabilité de température en polarisation
pour transistors à effet de champ métal-oxyde-
semiconducteur (MOSFET)
Bias-temperature stability test for metal-oxide,
semiconductor, field-effect transistors (MOSFET)

 IEC 2006 Droits de reproduction réservés  Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
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For price, see current catalogue

62373  IEC:2006 – 3 –
CONTENTS
FOREWORD.5
INTRODUCTION.9

1 Scope.11
2 Terms and definitions .11
3 Test equipment.15
3.1 Equipment.15
3.2 Requirement for handling .15
4 Test sample.17
4.1 Sample.17
4.2 Packaging .17
4.3 ESD protection circuit.17
5 Procedure .19
5.1 Initial measurement and read point measurement.19
5.2 Test.19
5.3 Notes for field MOSFET .21
5.4 Judgment .23

Annex A (informative) Wafer level reliability test (WLR test).25

Bibliography.27

Figure 1 – V -I curve to explain V .13
GS DS th-ex
Figure 2 – Connection between MOSFET electrodes and external terminals .17
Figure 3 – Example of ESD protection circuit .19
Figure 4 – MOSFET BT test circuit (Nch) .21

62373  IEC:2006 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE,
SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
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patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62373 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1862/FDIS 47/1875/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

62373  IEC:2006 – 7 –
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
62373  IEC:2006 – 9 –
INTRODUCTION
Under the stress of high temperature, and when high gate-source voltage is applied over a
long period of time, MOSFET degrades; saturation current decreases and the absolute value
of threshold voltage increases.
Known causes of degradation include mobile ion contamination, charge damage and the
creation of interface traps at SiO /Si interface or fixed charge by the carrier flow into the oxide.
62373  IEC:2006 – 11 –
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE,
SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)

1 Scope
This International Standard provides a test procedure for a bias-temperature (BT) stability test
of metal-oxide semiconductor, field-effect transistors (MOSFET).
2 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
2.1
constant current threshold voltage
V
th-ci
gate-source voltage at which drain current is equal to 0,1 µA/µm times gate width in micron
with the drain-source voltage in linear region or in the typical value of recommended operating
condition
NOTE This definition is expressed by the following equation as
V =V (1)
th−ci GS
where, V is the gate-source voltage
GS
under the following condition:
(2)
I = 0,1 µA/µm × W
DS
where I is the drain-source current and W is the gate width in microns
DS
and the drain voltage is in linear region or in the typical value of recommended operating condition. Linear region
means V = 0,05,….0,1 V (approximately).
DS
2.2
extrapolated threshold voltage
V
th-ext
gate-source voltage which is the extrapolated value in the (linear) I -(linear)V curve, from
DS GS
the point where the slope of the I -V curve becomes maximum with the maximum slope to
DS GS
the point of I = 0 in the condition of drain-source voltage in linear region or in the typical
DS
value of recommended operating condition
NOTE Figure 1 shows the gate-source voltage (V )–drain-source current (I ) curve.
GS DS
At about V = 0,3 V, the slope of I -V becomes maximum. The dotted line is the extrapolated line whose slope
GS DS GS
is the same maximum value as the I -V curve.
DS GS
The value where the extrapolated line crosses the line of I = 0 (X-axis) is V .
DS th-ext
62373  IEC:2006 – 13 –
4,00E–03
3,50E–03
3,00E–03
2,50E–03
2,00E–03
1,50E–03
1,00E–03
5,00E–04
0,00E+0
0 0,5 1 1,5 2
V
th-ex
V
GS
IEC  1181/06
Figure 1 – V -I curve to explain V
GS DS th-ex
2.3
saturated drain current
I
DS, sat
drain current on condition that both drain-source voltage and gate-source voltage are equal to
typical supply voltage of recommended operating condition
2.4
linear drain current
I
D, lin
drain current on condition that drain-source voltage ranges from 0,05 V to 0,1 V and gate-
source voltage is equal to typical supply voltage of recommended operating condition
2.5
drain leakage current
I
D, leak
drain current on condition that drain-source voltage is equal to typical supply voltage of
recommended operating condition and gate-source voltage is zero
NOTE If the sub-threshold current is no
...