EN 62047-17:2015

SLOVENSKI STANDARD
01-september-2015
Polprevodniški elementi - Mikroelektromehanski elementi - 17. del: Izboklinska
preskusna metoda za merjenje mehanskih lastnosti tankih plasti
Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method
for measuring mechanical properties of thin films
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 17: Wölbungs-
Prüfverfahren zur Bestimmung mechanischer Eigenschaften dünner Schichten
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 17: Méthode
d'essai de renflement pour la mesure des propriétés mécaniques des couches minces
Ta slovenski standard je istoveten z: EN 62047-17:2015
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN 62047-17

NORME EUROPÉENNE
EUROPÄISCHE NORM
July 2015
ICS 31.080.99
English Version
Semiconductor devices - Micro-electromechanical devices - Part
17: Bulge test method for measuring mechanical properties of
thin films
(IEC 62047-17:2015)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Partie 17: Méthode d'essai de Mikrosystemtechnik - Teil 17: Wölbungs-Prüfverfahren zur
renflement pour la mesure des propriétés mécaniques des Bestimmung mechanischer Eigenschaften dünner
couches minces Schichten
(IEC 62047-17:2015) (IEC 62047-17:2015)
This European Standard was approved by CENELEC on 2015-04-09. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2015 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 62047-17:2015 E
European foreword
The text of document 47F/210/FDIS, future edition 1 of IEC 62047-17, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-17:2015.

The following dates are fixed:
(dop) 2016-01-10
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2018-04-09
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62047-17:2015 was approved by CENELEC as a European
Standard without any modification.
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant

EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year

IEC 62047-2 2006 Semiconductor devices - Micro- EN 62047-2 2006
electromechanical devices -- Part 2: Tensile
testing method of thin film materials

IEC 62047-17 ®
Edition 1.0 2015-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 17: Bulge test method for measuring mechanical properties of thin films

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 17: Méthode d'essai de renflement pour la mesure des propriétés

mécaniques des couches minces
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-2295-9

– 2 – IEC 62047-17:2015 © IEC 2015
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms, definitions and symbols. 6
3.1 Terms and definitions . 6
3.2 Symbols . 7
4 Principle of bulge test . 7
5 Test apparatus and environment . 8
5.1 General . 8
5.2 Apparatus . 9
5.2.1 Pressuring device . 9
5.2.2 Bulge (pressure) chamber. 9
5.2.3 Height measurement units . 9
5.3 Test environment . 10
6 Specimen . 10
6.1 General . 10
6.2 Shape and dimension of specimen . 10
6.3 Measurement of test piece dimension . 10
7 Test procedure and analysis . 11
7.1 Test procedure . 11
7.2 Data analysis . 12
8 Test report . 13
Annex A (informative) Determination of mechanical properties . 14
A.1 General . 14
A.2 Determination of mechanical properties using stress-strain curve . 14
A.3 Determination of mechanical properties using analysis of load-deflection . 16
Annex B (informative) Deformation measurement techniques . 19
B.1 General . 19
B.2 Laser interferometry technique . 19
B.3 Capacitance type measurement . 19
Annex C (informative) Example of test piece fabrication: MEMS process . 25
C.1 Test piece fabrication . 25
C.2 Measurement of shape of specimen . 26
Bibliography . 27

Figure 1 – Typical example of bulge specimen . 7
Figure 2 – Membrane window bulged by pressure . 8
Figure 3 – Typical example of bulge test apparatus . 8
Figure 4 – Bulge membrane window shapes . 10
Figure 5 – Example of typical pressure-height curve obtained from bulge test . 12
Figure A.1 – Determination of biaxial modulus in the stress-strain curve obtained from
bulge test . 18
Figure B.1 – Typical example of laser interferometer configuration . 21

IEC 62047-17:2015 © IEC 2015 – 3 –
Figure B.2 – Typical fringe patterns obtained from laser Michelson interferometry and
ESPI system . 22
Figure B.3 – Typical example of the measurement system using a photo detector . 23
Figure B.4 – Schematic of capacitance bulge tester . 23
Figure B.5 – Typical example of relationship between bulge height and capacitance
change . 24
Figure C.1 – Example of fabrication procedure for bulge test piece . 25

Table 1 – Symbols and designations of a specimen . 7
Table A.1 – Examples of various expressions of parameters, C and C (ν), for thin
1 2
square films . 17
Table A.2 – Examples of various expressions of parameters, C and C (ν), for thin
1 2
spherical films . 17

– 4 – IEC 62047-17:2015 © IEC 2015
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 17: Bulge test method for measuring
mechanical properties of thin films

FOREWORD
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