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SIST

SIST EN 150012:2002

(Main)

Blank Detail Specification: Single gate field-effect transistors

Blank Detail Specification: Single gate field-effect transistors

D114/033: Withdrawn

Vordruck für Bauartspezifikation: Feldeffekt-Transistoren mit einer Gate-Elektrode

Spécification particulière cadre: Transistors à effet du champ à grille unique

Blank detail specification: Single gate field-effect transistors

General Information

Status
Withdrawn
Publication Date
31-Aug-2002
Withdrawal Date
20-Oct-2009
ICS
31.080.30 - Transistors
Technical Committee
I11 - Imaginarni 11
Current Stage
9900 - Withdrawal (Adopted Project)
Start Date
19-Oct-2009
Due Date
11-Nov-2009
Completion Date
21-Oct-2009
Ref Project
EN 150012:1991 - Blank Detail Specification: Single gate field-effect transistors

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2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Blank detail specification: Single gate field-effect transistorsVordruck für Bauartspezifikation: Feldeffekt-Transistoren mit einer Gate-ElektrodeSpécification particulière cadre: Transistors à effet du champ à grille uniqueBlank Detail Specification: Single gate field-effect transistors31.080.30TranzistorjiTransistorsICS:Ta slovenski standard je istoveten z:EN 150012:1991SIST EN 150012:2002en01-september-2002SIST EN 150012:2002SLOVENSKI
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SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



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