SIST EN 60747-5-5:2011

SLOVENSKI STANDARD
01-april-2011
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Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices -
Photocouplers (IEC 60747-5-5:2007)
Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 5-5: Optoelektronische
Bauelemente - Optokoppler (IEC 60747-5-5:2007)
Dispositifs à semiconducteurs - Dispositifs discrets - Partie 5-5: Dispositifs
optoélectroniques - Photocoupleurs (CEI 60747-5-5:2007)
Ta slovenski standard je istoveten z: EN 60747-5-5:2011
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.260 Optoelektronika, laserska Optoelectronics. Laser
oprema equipment
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD
EN 60747-5-5
NORME EUROPÉENNE
February 2011
EUROPÄISCHE NORM
ICS 31.080.01; 31.260
English version
Semiconductor devices -
Discrete devices -
Part 5-5: Optoelectronic devices -
Photocouplers
(IEC 60747-5-5:2007)
Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Dispositifs discrets - Einzel-Halbleiterbauelemente -
Partie 5-5: Dispositifs optoélectroniques - Teil 5-5: Optoelektronische Bauelemente -
Photocoupleurs Optokoppler
(CEI 60747-5-5:2007) (IEC 60747-5-5:2007)

This European Standard was approved by CENELEC on 2011-01-02. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels

© 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60747-5-5:2011 E
Foreword
The text of document 47E/332/FDIS, future edition 1 of IEC 60747-5-5, prepared by SC 47E, Discrete
semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC
parallel vote and was approved by CENELEC as EN 60747-5-5 on 2011-01-02.
This EN 60747-5-5:2011 replaces the clauses for photocouplers (or optocouplers) described in
EN 60747-5-1, EN 60747-5-2 and EN 60747-5-3, including their amendments.
The contents for phototransistors and photothyristors in EN 60747-5-1, EN 60747-5-2 and EN 60747-5-3,
including their amendments, will be considered obsolete as of the effective date of publication of this
standard.
NOTE Photocouplers that are certified to the previous version of the photocoupler standard, namely EN 60747-5-1/2/3, should
be considered in compliance with the requirements and provisions of EN 60747-5-5.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2012-01-02
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2014-01-02
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60747-5-5:2007 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 60270:2000 NOTE  Harmonized as EN 60270:2001 (not modified).
IEC 60747-5-1:1997 NOTE  Harmonized as EN 60747-5-1:2001 (not modified).
IEC 60747-5-2:1997 NOTE  Harmonized as EN 60747-5-2:2001 (not modified).
IEC 60747-5-3:1997 NOTE  Harmonized as EN 60747-5-3:2001 (not modified).
__________
- 3 - EN 60747-5-5:2011
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year

IEC 60065 (mod) 2001 Audio, video and similar electronic EN 60065 2002
apparatus - Safety requirements + corr. August 2007
+ A11 2008
1)
IEC 60068-1 1988 Environmental testing - EN 60068-1 1994
Part 1: General and guidance
IEC 60068-2-1 2007 Environmental testing - EN 60068-2-1 2007
Part 2-1: Tests - Test A: Cold

IEC 60068-2-2 2007 Environmental testing - EN 60068-2-2 2007
Part 2-2: Tests - Test B: Dry heat

IEC 60068-2-6 2007 Environmental testing - EN 60068-2-6 2008
Part 2-6: Tests - Test Fc: Vibration
(sinusoidal)
2) 3)
IEC 60068-2-14 1984 Environmental testing - EN 60068-2-14 1999
Part 2: Tests - Test N: Change of temperature

IEC 60068-2-17 1994 Environmental testing - EN 60068-2-17 1994
Part 2: Tests - Test Q: Sealing

IEC 60068-2-27 2008 Environmental testing - EN 60068-2-27 2009
Part 2-27: Tests - Test Ea and guidance:
Shock
IEC 60068-2-30 2005 Environmental testing - EN 60068-2-30 2005
Part 2-30: Tests - Test Db: Damp heat, cyclic
(12 h + 12 h cycle)
IEC 60068-2-58 2004 Environmental testing - EN 60068-2-58 2004
Part 2-58: Tests - + corr. December 2004
Test Td: Test methods for solderability,
resistance to dissolution of metallization and
to soldering heat of surface mounting devices
(SMD)
IEC 60068-2-78 2001 Environmental testing - EN 60068-2-78 2001
Part 2-78: Tests - Test Cab: Damp heat,
steady state
1)
EN 60068-1 includes A1 to IEC 60068-1 + corr. October 1988.
2)
EN 60068-2-14 includes A1 to IEC 60068-2-14.
3)
EN 60068-2-14 is superseded by EN 60068-2-14:2009, which is based on IEC 60068-2-14:2009.

Publication Year Title EN/HD Year

IEC 60112 2003 Method for the determination of the proof EN 60112 2003
and the comparative tracking indices of solid
insulating materials
IEC 60216-1 2001 Electrical insulating materials - Properties of EN 60216-1 2001
thermal endurance -
Part 1: Ageing procedures and evaluation of
test results
IEC 60216-2 2005 Electrical insulating materials - Thermal EN 60216-2 2005
endurance properties -
Part 2: Determination of thermal endurance
properties of electrical insulating materials -
Choice of test criteria
IEC 60664-1 2007 Insulation coordination for equipment within EN 60664-1 2007
low-voltage systems -
Part 1: Principles, requirements and tests

IEC 60672-2 1999 Ceramic and glass insulating materials - EN 60672-2 2000
Part 2: Methods of test
IEC 60695-11-5 2004 Fire hazard testing - EN 60695-11-5 2005
Part 11-5: Test flames - Needle-flame test
method - Apparatus, confirmatory test
arrangement and guidance
IEC 60747-5-5
Edition 1.0 2007-09
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 5-5: Optoelectronic devices – Photocouplers

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 5-5: Dispositifs optoélectroniques – Photocoupleurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
XA
CODE PRIX
ICS 31.080.01; 31.260 ISBN 2-8318-8643-0

– 2 – 60747-5-5 © IEC:2007
CONTENTS
FOREWORD.6

1 Scope.8
2 Normative references .8
3 Photocoupler .9
3.1 Semiconductor material.9
3.2 Details of outline and encapsulation .9
3.2.1 IEC and/or national reference number of the outline drawing .9
3.2.2 Method of encapsulation: glass/metal/plastic/other .9
3.2.3 Terminal identification and indication of any connection between a
terminal and the case .9
3.3 Type of photocouplers .9
3.3.1 DC input photocoupler .9
3.3.2 AC input photocoupler .9
3.3.3 Phototransistor photocoupler .9
3.3.4 Photodarlington photocoupler .9
3.3.5 Photothyristor photocoupler.9
3.3.6 Phototriac photocoupler.10
3.3.7 IC photocoupler .10
3.3.8 FET photocoupler .10
3.3.9 Photodiode photocoupler .10
3.3.10 IC input photocoupler .10
3.3.11 Solid state opto relay.10
4 Terms related to ratings and characteristics for photocouplers .10
4.1 Current transfer ratio .10
4.1.1 Static value of the (forward) current transfer ratio h .10
F(ctr)
4.1.2 Small-signal short-circuit (forward) current transfer ratio h .10
f(ctr)
4.2 Cut-off frequency f .10
co
4.3 Input-to-output capacitance C .10
IO
4.4 Isolation resistance R .10
IO
4.5 Isolation voltage .10
4.5.1 DC isolation voltage V .11
IO
4.5.2 Repetitive peak isolation voltage V .11
IORM
4.5.3 Surge isolation voltage V .11
IOSM
4.6 Terms related to photocouplers with phototriac output and/or solid state
opto-relay with triac output .11
4.6.1 Repetitive peak voltage .11
4.6.2 Repetitive peak off-state voltage V .11
DRM
4.6.3 Repetitive peak reverse voltage V .11
RRM
4.6.4 RMS on-state current I .11
T(RMS)
4.6.5 Peak off-state current I .11
DRM
4.6.6 Peak on-state voltage V .11
TM
4.6.7 DC off-state current I .11
BD
4.6.8 DC on-state voltage V .11
T
4.6.9 Holding current I .11
H
4.6.10 Critical rate of rise of off-state voltage dV/dt .11

60747-5-5 © IEC:2007 – 3 –
4.6.11 Trigger input current I .12
FT
4.7 Common mode transient immunity CMTI .12
5 Terms for photocoupler providing protection against electrical shock.12
5.1 Safety ratings of a photocoupler for reinforced isolation .12
5.2 Electrical safety requirements of a photocoupler for reinforced isolation.12
5.2.1 Partial discharge p .12
d
5.2.2 Apparent charge q , q .12
pd
5.2.3 Threshold apparent charge q , q .12
pd(TH) TH
5.2.4 Test voltages for the partial-discharge test of a photocoupler .12
5.2.5 Test voltage V , V .12
pd(t) t
5.2.6 Partial discharge test voltage V .13
pd(t)
5.2.7 Initial test voltage V , V .13
pd(ini) ini
5.2.8 Apparent charge measuring voltage V , V .13
pd(m) m
5.2.9 Partial-discharge inception voltage V , V .13
pd(i) i
5.2.10 Partial-discharge extinction voltage V , V .13
pd(e) e
5.2.11 Time intervals of the test voltage .13
5.3 Isolation voltages and isolation test voltages for photocouplers providing
protection against electrical shock.16
5.3.1 Rated isolation voltage .16
5.4 Limiting values (absolute maximum system) over the operating temperature
range, unless otherwise stated .16
5.4.1 Minimum and maximum storage temperatures T .16
stg
5.4.2 Minimum and maximum ambient or reference-point operating
temperatures T or T .16
amb ref
5.4.3 Maximum soldering temperature T .16
sld
5.4.4 Maximum continuous (direct) reverse input voltage V .16
R
5.4.5 Maximum collector-emitter voltage, with the base open-circuited
V .16
CEO
5.4.6 Maximum collector-base voltage, where an external base connection is
present, with the emitter open-circuited V .16
CBO
5.4.7 Maximum emitter-base voltage, where an external base connection is
present, with the collector open-circuited V .16
EBO
5.4.8 Maximum emitter-collector voltage, where no external base connection
is present V .16
ECO
5.4.9 Maximum continuous (direct) or repetitive peak isolation voltage V
IO
or V .16
IORM
5.4.10 Where appropriate, maximum surge isolation voltage V .16
IOSM
5.4.11 Maximum continuous collector current I .17
C
5.4.12 Maximum continuous forward input current I at an ambient or
F
reference-point temperature of 25 °C and derating curve or derating
factor.17
5.4.13 Maximum peak forward input current I at an ambient or
FM
reference-point temperature of 25 °C and under specified pulse
conditions.17
5.4.14 Maximum power dissipation P of the output transistor at an ambient
trn
or reference-point temperature of 25 °C and a derating curve or
derating factor .17
5.4.15 Maximum total power dissipation of the package P at an ambient or
tot
reference-point temperature of 25 °C and derating curve or derating
factor.17

– 4 – 60747-5-5 © IEC:2007
6 Electrical characteristics.17
6.1 Phototransistor output photocoupler .17
6.2 Phototriac output photocoupler or solid state opto-relay .19
7 Photocouplers providing protection against electrical shock.19
7.1 Type.19
7.2 Ratings (have to be mentioned in a special section in the manufacturer’s data
sheet).19
7.2.1 Safety ratings .19
7.2.2 Functional ratings.19
7.2.3 Rated isolation voltages .19
7.3 Electrical safety requirements .20
7.4 Electrical, environmental and/or endurance test information (supplementary
information) .20
8 Measuring methods for photocouplers .27
8.1 Current transfer ratio h .27
F(ctr)
8.2 Input-to-output capacitance C .28
IO
8.3 Isolation resistance between input and output R .29
IO
8.4 Isolation test.30
8.5 Partial discharges of photocouplers.31
8.6 Collector-emitter saturation voltage V of a photocoupler .34
CE(sat)
8.6.1 Collector-emitter saturation voltage (d.c. method).34
8.6.2 Collector-emitter saturation voltage (pulse method) .35
8.7 Switching times t t of a photocoupler .36
on, off
8.8 Peak off-state current I .37
DRM
8.9 Peak on-state voltage V .39
TM
8.10 DC off-state current I .41
BD
8.11 DC on-state voltage V .42
T
8.12 Holding current I .43
H
8.13 Critical rate of rise of off-state voltage dV/dt.43
8.14 Trigger input current I .46
FT
8.15 Measuring methods of common mode transient immunity (CMTI) for
photocoupler .47
9 Testing methods of electrical rating for phototriac coupler .49
9.1 Repetitive peak off-state voltage V .49
DRM
9.2 DC off-state voltage V .50
BD
Annex A (normative) Input/output safety test .51

Bibliography.52

Figure 1a – Time intervals for method a).14
Figure 1b – Time intervals for method b).15
Figure 1 – Time intervals of the test voltage.15
Figure 2 – Test voltage .17
Figure 3 – Measurement circuit.27
Figure 4 – Measurement circuit for input to output capacitance.29
Figure 5 – Measurement circuit for isolation resistance.29

60747-5-5 © IEC:2007 – 5 –
Figure 6 – Test circuit for withstanding isolation voltage .30
Figure 7 – Partial discharge test circuit .31
Figure 8 – Complete test arrangement connections for calibration .32
Figure 9 – DC measurement circuit.34
Figure 10 – Pulse measurement circuit .35
Figure 11 – Switching time measurement circuit .36
Figure 12 – Switching times .37
Figure 13 – Measurement circuit for peak off-state current.38
Figure 14 – Waveforms of the peak off-state voltage and current.39
Figure 15 – Measurement circuit for peak on-state voltage .40
Figure 16 – Waveforms of the peak on-state voltage and current .41
Figure 17 – Measurement circuit for d.c. off-state current .41
Figure 18 – Measurement circuit for d.c. on-state voltage .42
Figure 19 – Measurement circuit for holding current.43
Figure 20 – Measurement circuit for critical rate of rise of off-state voltage .44
Figure 21 – Exponential waveform of the off-voltage (V ).45
D
Figure 22 –Linear pulse form of the off-voltage (V ) .45
D
Figure 23 – Measurement circuit for the trigger input current .46
Figure 24 – Output terminal voltage versus input forward current.46
Figure 25 – Common mode transient immunity (CMTI) measurement circuit for
photocoupler.47
Figure 26 – Typical waveforms of the common mode pulse (V ) and optocoupler
CM
output (V ).49
O
Figure A.1 – Circuit diagram .51

Table 1 – Datasheet characteristics .20
Table 2 – Tests and test sequence for photocoupler providing protection against
electrical shock.26
Table 3 – Test conditions.27

– 6 – 60747-5-5 © IEC:2007
INTERNATIONAL ELECTROTECHNICAL COMMISSION
______________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 5-5: Optoelectronic devices –
Photocouplers
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in
addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any equipment
declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses
arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-5-5 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This standard replaces the clauses for photocouplers (or optocouplers) described in
IEC 60747-5-1, IEC 60747-5-2 and IEC 60747-5-3, including their amendments.
The contents for phototransistors and photothyristors in IEC 60747-5-1, IEC 60747-5-2 and
IEC 60747-5-3, including their amendments, will be considered obsolete as of the effective date
of publication of this standard.
NOTE Photocouplers that are certified to the previous version of the photocoupler standard, namely
IEC 60747-5-1/2/3, are to be considered in compliance with the requirements and provisions of IEC 60747-5-5.

60747-5-5 © IEC:2007 – 7 –
The text of this standard is based on the following documents:
FDIS Report on voting
47E/332/FDIS 47E/340/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of the parts in the IEC 60747 series, under the general title Semiconductor devices –
Discrete devices, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until the
maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
– 8 – 60747-5-5 © IEC:2007
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 5-5: Optoelectronic devices –
Photocouplers
1 Scope
This part of IEC 60747 gives the terminology, essential ratings, characteristics, safety tests as
well as the measuring methods for photocouplers (or optocouplers).
NOTE The word “optocoupler” can also be used instead of “photocoupler”.
2 Normative references
The following referenced documents are indispensable for the application of this document. For
dated references, only the edition cited applies. For undated references, the latest edition of the
referenced document (including any amendments) applies.
IEC 60065:2001, Audio, video and similar electronic apparatus – Safety requirements
IEC 60068-1:1988, Environmental testing – Part 1: General and guidance
IEC 60068-2-1:2007, Environmental testing – Part 2: Tests – Tests A: Cold
IEC 60068-2-2:2007, Environmental testing – Part 2: Tests – Tests B: Dry heat
IEC 60068-2-78:2001, Environmental testing – Part 2-78: Tests – Test Cab: Damp heat, steady
state
IEC 60068-2-6:⎯, Environmental testing – Part 2: Tests – Test Fc: Vibration (sinusoidal)
IEC 60068-2-14:1984, Environmental testing – Part 2: Tests – Test N: Change of temperature
IEC 60068-2-17:1994, Basic environmental testing procedures – Part 2: Tests – Test Q: Sealing
IEC 60068-2-27:⎯, Environmental testing – Part 2-27: Tests – Test Ea and guidance: Shock
and bump
IEC 60068-2-30:2005, Environmental testing – Part 2-30: Tests – Test Db: Damp heat, cyclic
(12 h + 12 h cycle)
IEC 60068-2-58:2005, Environmental testing – Part 2-58: Tests – Test Td: Test methods for
solderability, resistance to dissolution of metallization and to soldering heat of surface mounting
devices (SMD)
IEC 60112:2003, Method for the determination of the proof and the comparative tracking indices
of solid insulating materials
___________
To be published (replacing the sixth edition)
To be published (replacing the third edition)

60747-5-5 © IEC:2007 – 9 –
IEC 60216-1:2001, Electrical insulating materials – Properties of thermal endurance – Part 1:
Ageing procedures and evaluation of test results
IEC 60216-2:2005, Electrical insulating materials – Thermal endurance properties – Part 2:
Determination of thermal endurance properties of electrical insulating materials – Choice of test
criteria
IEC 60664-1:2007, Insulation coordination for equipment within low-voltage systems – Part 1:
Principles, requirements and tests
IEC 60672-2:1999, Ceramic and glass insulating materials – Part 2: Methods of test
IEC 60695-11-5:2004, Fire hazard testing – Part 11-5: Test flames – Needle-flame test method
– Apparatus, confirmatory test arrangement and guidance
3 Photocoupler
Optoelectronic device designed for the transfer of the electrical signals by utilizing optical
radiation to provide coupling with electrical isolation between the input and the output
NOTE Different types of photocouplers include ambient-rated or case-rated photocouplers, for signal-isolation
applications.
3.1 Semiconductor material
– Input diode: Gallium Arsenide, Gallium Aluminium Arsenide, etc.
– Output: Silicon, etc.
3.2 Details of outline and encapsulation
3.2.1 IEC and/or national reference number of the outline drawing
3.2.2 Method of encapsulation: glass/metal/plastic/other
3.2.3 Terminal identification and indication of any connection between a terminal and
the case
3.3 Type of photocouplers
3.3.1 DC input photocoupler
Photocoupler consisting at the input of a photoemitter to which d.c. current is applied
3.3.2 AC input photocoupler
Photocoupler consisting at the input of antiparallel photoemitters to which a.c. current is applied
3.3.3 Phototransistor photocoupler
Photocoupler whose photo sensitive element is a phototransister
NOTE Phototransistor is a transistor in which the current produced by the photoelectric effect in the neighbourhood of
the emitter-base junction acts as base current, which is amplified.
3.3.4 Photodarlington photocoupler
Photocoupler whose photo sensitive element is a Darlington phototransistor
NOTE A base terminal may or may not be provided.
3.3.5 Photothyristor photocoupler
Photocoupler whose photo sensitive element is a photothyristor
NOTE 1 Photothyrister is a thyrister that is designed to be triggered by optical radiation.
NOTE 2 Gate terminal may or may not be provided.

– 10 – 60747-5-5 © IEC:2007
3.3.6 Phototriac photocoupler
Photocoupler whose photo sensitive element is a phototriac.
NOTE A phototriac is a triac that is designed to be triggered by optical radiation.
3.3.7 IC photocoupler
Photocoupler whose photo-sensitive element is a photodiode/phototransistor and an integrated
circuit
3.3.8 FET photocoupler
Photocoupler with one or more field-effect transistors (FETs) in the output stage
NOTE A FET is activated by photo emitter by direct optical radiation.
3.3.9 Photodiode photocoupler
Photocoupler whose photosensitive element is a photodiode
3.3.10 IC input photocoupler
Photocoupler whose input element consists of an integrated circuit and an photoemitter.
3.3.11 Solid state opto relay
Photocoupler whose photo sensitive element is phototriac and output is triac.
4 Terms related to ratings and characteristics for photocouplers
4.1 Current transfer ratio
4.1.1 Static value of the (forward) current transfer ratio h
F(ctr)
The ratio of the d.c. output current to the d.c. input current, the output voltage being held
constant.
NOTE The abbreviation CTR (d.c.) is sometimes used instead of a symbol.
4.1.2 Small-signal short-circuit (forward) current transfer ratio h
f(ctr)
The ratio of the a.c. output current to the a.c. input current, the output being short-circuited to
a.c.
NOTE The abbreviation CTR (a.c.) is sometimes used instead of a symbol.
4.2 Cut-off frequency f
co
The frequency at which the modulus of the small-signal current transfer ratio has decreased to
1 2 of its low-frequency value.
4.3 Input-to-output capacitance C
IO
The total capacitance between all input terminals connected together and all output terminals
connected together.
4.4 Isolation resistance R
IO
The resistance between all input terminals connected together and all output terminals
connected together.
4.5 Isolation voltage
The voltage between any specified input terminal and any specified output terminal.

60747-5-5 © IEC:2007 – 11 –
4.5.1 DC isolation voltage V
IO
The value of the constant isolation voltage
4.5.2 Repetitive peak isolation voltage V
IORM
The highest instantaneous value of the isolation voltage including all repetitive transient
voltages, but excluding all non-repetitive transient voltages.
NOTE A repetitive transient voltage is usually a function of the circuit. A non-repetitive transient voltage is usually due
to an external cause and it is assumed that its effect has completely disappeared before the next non-repetitive
voltage transient arrives.
4.5.3 Surge isolation voltage V
IOSM
The highest instantaneous value of an isolation voltage pulse of specified wave shape with short
time duration
4.6 Terms related to photocouplers with phototriac output and/or solid state opto-relay
with triac output
4.6.1 Repetitive peak voltage
4.6.2 Repetitive peak off-state voltage V
DRM
Maximum applicable repetitive peak forward voltage between anode and cathode in off-state
under specified gate conditions.
NOTE The repetitive voltage has a slew rate of less than the specified critical rate of rise of off-state voltage (dv/dt).
4.6.3 Repetitive peak reverse voltage V
RRM
Maximum applicable repetitive peak reverse voltage between anode and cathode in off-state
under specified gate conditions.
4.6.4 RMS on-state current I
T(RMS)
Maximum applicable root-mean-square forward current between anode and cathode in on-state
under specified gate conditions.
4.6.5 Peak off-state current I
DRM
Forward leakage current between the off-state output terminals under specified conditions
4.6.6 Peak on-state voltage V
TM
Peak forward voltage between on-state output terminals under specified conditions
4.6.7 DC off-state current I
BD
Forward leakage current between off-state output terminals under specified conditions
4.6.8 DC on-state voltage V
T
The d.c. forward voltage between on-state output terminals under specified conditions, when the
specified forward current is applied between on-state output terminals
4.6.9 Holding current I
H
The minimum on-state current in output to maintain the on-state under specified conditions
4.6.10 Critical rate of rise of off-state voltage dV/dt
The rate of rise of off-state voltage just before the transition from off-state to on-state under the
specified operating conditions

– 12 – 60747-5-5 © IEC:2007
4.6.11 Trigger input current I
FT
The minimum input forward current to switch from off-state to on-state in output under specified
conditions
4.7 Common mode transient immunity CMTI
The common mode transient immunity (CMTI), also sometimes referred to as the common mode
rejection (CMR) or the common mode rejection ratio (CMRR), is the maximum tolerable
rate-of-rise (or fall) of a common mode voltage (V ). The CMTI specification or the CMR or
CM
CMRR specification should include the amplitude of the common mode pulse (V ). This
CM
common mode pulse (V ) that is applied across the two grounds across the optocoupler should
CM
not exceed the maximum rated transient isolation voltage specification of the photocoupler as
defined by the V .
IOTM
5 Terms for photocoupler providing protection against electrical shock
This clause covers terms for a photocoupler after it has been subjected to operating conditions
(safety ratings) that exceed the specified ratings (limiting values) for normal operation.
5.1 Safety ratings of a photocoupler for reinforced isolation
Electrical, thermal, and mechanical operating conditions that exceed the specified ratings
(limiting values) for normal operation, and to which the specified safety requirements refer.
5.2 Electrical safety requirements of a photocoupler for reinforced isolation
Electrical requirements that have to be met and maintained after the photocoupler has been
subjected to specified safety ratings, to ensure protection against electrical shock.
NOTE The photocoupler may become permanently inoperative when safety ratings are applied.
5.2.1 Partial discharge p
d
Localized electrical discharge which occurs in the insulation between input and output terminals
of the photocoupler
5.2.2 Apparent charge q , q
pd
Electrical charge caused by a partial discharge in the photocoupler
5.2.3 Threshold apparent charge q , q
pd(TH) TH
A specified value of apparent charge that is as small as technically feasible and to which
measured values of the partial-discharge inception voltage or extinction voltage, respectively,
refer.
NOTE 1 A threshold apparent charge of 5 pC was found to be a practicable criterion for photocouplers. Otherwise it
should be defined on each individual device design. Smaller values are desirable but are not viable at this time.
NOTE 2 In actual tests, this criterion applies to the apparent charge pulse with the maximum value.
NOTE 3 The term specified discharge magnitude" (see 3.18.2 of IEC 60664-1) is synonymous with threshold
apparent charge.
5.2.4 Test voltages for the partial-discharge test of a photocoupler
See Figure 1a and Figure 1b. All voltages used are a.c. peak voltages.
5.2.5 Test voltage V , V
pd(t) t
The voltage applied during the test period between the input terminals (connected together) and
the output
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