ISO/DTR 23247-100

ISO/TC 184/SC 4/WG 15
Secretariat: ANSI
Date: 2024-10-242025-01-28
Automation systems and integration — Digital twin framework
for manufacturing — —
Part 100:
Use case on management of semiconductor ingot growth process

DTR stage
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iii
ISO #####-#:####(X/DTR 23247-100:(en)
Contents
Foreword . v
Introduction . vi
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Overview . 2
5 Operational sequences . 5
5.1 Process flow . 5
5.2 Phase 1: Select and preparation . 6
5.3 Phase 2: Melting and dopant addition . 7
5.4 Phase 3: Seeding and crystal growth . 7
5.5 Phase 4: Ingot pulling and initial testing . 8
5.6 Phase 5: Documenting . 8
6 Mapping to the framework . 9
6.1 Overview . 9
6.2 Implementation using the framework . 10
6.3 Mapping of the process digital twin to the digital twin entity . 13
6.4 Mapping of ingot growth equipment digital twin to digital twin entity . 15
6.5 Mapping of ingot digital twin to digital twin entity . 17
7 Conclusion . 20
Bibliography . 21

© ISO #### 2025 – All rights reserved
iv
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out through
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The procedures used to develop this document and those intended for its further maintenance are described
in the ISO/IEC Directives, Part 1. In particular, the different approval criteria needed for the different types of
ISO documents should be noted. This document was drafted in accordance with the editorial rules of the
ISO/IEC Directives, Part 2 (see www.iso.org/directives).
ISO draws attention to the possibility that the implementation of this document may involve the use of (a)
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This document was prepared by Technical Committee ISO/TC 184, Automation systems and integration,
Subcommittee SC 4, Industrial data.
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Introduction
The semiconductor ingot growing process is an important step in the production of semiconductor wafers,
which are used to manufacture electronic components such as integrated circuits and solar cells.
Despite advancements in automated ingot growth equipment, the conventional ingot growth process
continues to face challenges due to the degree of human intervention required, it often relies on operators'
experience and know-how. This dependence can lead to issues such as inaccurate quality, inconsistent
machine setup, unstable temperature maintenance, and inconsistent melting.
A digital twin for the ingot growth process can effectively address these issues by simulating and optimizing
the entire process in a virtual environment and reducing reliance on manual intervention.
Using a digital twin for monitoring and controlling the ingot growth process offers several advantages as
follows:
— Real-time monitoring: a digital twin allows continuous and real-time monitoring of the ingot growth
process. It provides detailed insights into key parameters such as temperature, growth rate, crystal
quality, and dopant concentration. This enables operators to detect deviations or anomalies early on and
take necessary corrective actions promptly.
— Process optimization: by analysing the data collected for the digital twin, it becomes possible to optimize
the ingot growth process. Patterns and trends can be identified, allowing for adjustments in various
parameters to improve yield, reduce defects, and enhance the overall quality of the ingots and resulting
wafers.
— Predictive maintenance: a digital twin can help predict maintenance requirements for the equipment used
in the ingot growth process. By monitoring equipment performance and analysing historical data, the
digital twin can help identify potential issues or deterioration in advance, enabling proactive maintenance
and minimizing unplanned downtime.
— Training and simulation: a digital twin can be used for training operators and engineers. It provides a
virtual environment where individuals can practice and simulate different scenarios without the need for
actual physical equipment. This helps in enhancing operational skills, testing new strategies, and
improving decision-making capabilities.
By leveraging the advantages of a digital twin, semiconductor manufacturers can gain deeper insights into the
ingot growth process, optimize production parameters, enhance quality control, and improve overall
productivity and efficiency.
© ISO #### 2025 – All rights reserved
vi
Automation systems and integration — Digital twin framework for
manufacturing — —
Part 100:
Use case on management of semiconductor ingot growth process
1 Scope
This document describes a digital twin for monitoring and controlling the semiconductor ingot growth
process. The use case is analysed and designed using the ISO 23247, “Digital twin framework for
manufacturing”. series. The result is a systematic view of the use case implementation and a high-level design
of the digital twins, which can be directly implemented using the readily available tools and languages,
including those supported by the relevant standards.
2 Normative references
There are no normative references in this document.
The following documents are referred to in the text in such a way that some or all of their content constitutes
requirements of this document. For dated references, only the edition cited applies. For undated references,
the latest edition of the referenced document (including any amendments) applies.
ISO 23247-1, Automation systems and integration — Digital twin framework for manufacturing — Part 1:
Overview and general principles
3 Terms and definitions
For the purposes of this document, the terms and definitions given in ISO 23247-1 and the following apply.
ISO and IEC maintain terminology databases for use in standardization at the following addresses:
— ISO Online browsing platform: available at https://www.iso.org/obp
— IEC Electropedia: available at https://www.electropedia.org/
3.1 3.1
ingot
large, single crystal of semiconductor material, typically silicon, that serves as the starting material for the
production of semiconductor wafers
Note 1 to entry: The ingot is grown through a process called ingot growth, where high-purity silicon is melted and then
slowly solidified to form a large cylindrical crystal. This crystal is typically several inches in diameter and can be several
feet long, depending on the intended use and requirements.
Note 2 to entry: The ingot is the primary raw material from which individual semiconductor wafers are cut. These wafers
undergo further processing steps to fabricate electronic components such as integrated circuits (ICs) or solar cells. The
quality and characteristics of the ingot, including its crystalline structure and impurity levels, play a crucial role in
determining the performance and reliability of the resulting semiconductor devices.
3.2 3.2
ingot growth process
crystal growth process
step in semiconductor manufacturing where high-purity silicon is melted to grow a crystal
ISO #####-#:####(X/DTR 23247-100:(en)
Note 1 to entry: In this process, a small single crystal called a “seed crystal” is carefully placed on molten silicon, and as
the seed crystal is slowly withdrawn, silicon atoms from the molten phase arrange themselves in an ordered lattice
structure, forming a larger crystal.
Note 2 to entry: The growth is controlled by parameters such as temperature and pulling rate, resulting in the uniform
and high-quality growth of the silicon crystal. The grown crystal is then used to produce semiconductor wafers.
4 Overview
The semiconductor ingot growth process is an important step in semiconductor wafer production. Figure 1
presents the conventional procedures of the ingot growth process.

Key
A melting of polysilicon, doping

Deleted Cells
B introduction of the seed crystal

Deleted Cells
C beginning of the crystal growth

D crystal pulling
E formed crystal with a residue of melted silicon

Figure 1 — Ingot growth process
The conventional procedures of the ingot growth process are as follows:
© ISO #### 2025 – All rights reserved
1. Material selection: High-purity silicon is chosen as the starting material due to its desirable
semiconductor properties. The silicon is typically sourced in the form of polysilicon or as
metallurgical-grade silicon.
2. Preparation of the crystal growth equipment: The equipment used for crystal growth, such as a
furnace, is cleaned and prepared before the ingot growth process begins.
3. Melting: The silicon is melted in a high-temperature furnace, usually by using a radiofrequency (RF)
induction heating system. The crucible used for melting is often made of quartz or graphite, which
can with
...