ISO 22493:2014

INTERNATIONAL ISO
STANDARD 22493
Second edition
2014-04-15
Microbeam analysis — Scanning
electron microscopy — Vocabulary
Analyse par microfaisceaux — Microscopie électronique à balayage
— Vocabulaire
Reference number
©
ISO 2014
© ISO 2014
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ii © ISO 2014 – All rights reserved

Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Abbreviated terms . 1
3 Terms and definitions used in the physical basis of SEM . 1
4 Terms and definitions used in SEM instrumentation . 5
5 Terms and definitions used in SEM image formation and processing .12
6 Terms and definitions used in SEM image interpretation and analysis .16
7 Terms and definitions used in the measurement and calibration of SEM image
magnification and resolution .18
Bibliography .20
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
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electrotechnical standardization.
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The committee responsible for this document is ISO/TC 202, Microbeam analysis, Subcommittee SC 1,
Terminology.
This second edition cancels and replaces the first edition (ISO 22493:2008), of which it constitutes a
minor revision.
iv © ISO 2014 – All rights reserved

Introduction
The scanning electron microscopy (SEM) technique is used to observe and characterize the surface
morphology and structure of solid materials, such as metal alloys, ceramics, glasses, minerals, polymers,
powders, etc., on a spatial scale of micrometer down to nanometer laterally. In addition, three-dimensional
structure can be generated by using a combination of focused ion beam and scanning-electron-based
analysis techniques. The SEM technique is based on the physical mechanism of electron optics, electron
scattering and secondary electron emission.
As a major sub-field of microbeam analysis (MBA), the SEM technique is widely applied in diverse sectors
(high-tech industries, basic industries, metallurgy and geology, biology and medicine, environmental
protection, trade, etc.) and has a strong business base that needs standardization.
Standardizing the terminology of a technical field is one of the basic prerequisites for development of
standards on other aspects of that field.
This International Standard is relevant to the need for an SEM terminology that contains consistent
definitions of terms as they are used in the practice of scanning electron microscopy by the international
scientific and engineering communities that employ the technique. This International Standard is the
second one developed in a package of standards on electron probe microanalysis (EPMA), scanning
electron microscopy (SEM), analytical electron microscopy (AEM), energy-dispersive X-ray spectroscopy
(EDS), etc., developed or to be developed by Technical Committee ISO/TC 202, Microbeam analysis,
Subcommittee SC 1, Terminology, to cover the complete field of MBA.
INTERNATIONAL STANDARD ISO 22493:2014(E)
Microbeam analysis — Scanning electron microscopy —
Vocabulary
1 Scope
This International Standard defines terms used in the practice of scanning electron microscopy (SEM).
It covers both general and specific concepts, classified according to their hierarchy in a systematic order,
with those terms that have already been defined in ISO 23833 also included, where appropriate.
This International Standard is applicable to all standardization documents relevant to the practice of
SEM. In addition, some clauses of this International Standard are applicable to documents relevant to
related fields (e.g. EPMA, AEM, EDS) for the definition of terms which are relevant to such fields.
2 Abbreviated terms
AEM analytical electron microscope/microscopy
BSE (BE) backscattered electron
CPSEM controlled pressure scanning electron microscope/microscopy
CRT cathode ray tube
EBIC electron beam induced current
EBSD electron backscatter/backscattering diffraction
EDS energy-dispersive spectrometer/spectrometry
EPMA electron probe microanalyser/analysis
ESEM environmental scanning electron microscope/microscopy
FWHM full width at half maximum
SE secondary electron
SEM scanning electron microscope/microscopy
VPSEM variable-pressure scanning electron microscope/microscopy
3 Terms and definitions used in the physical basis of SEM
3.1
electron optics
science that deals with the passage of electrons through electrostatic and/or electromagnetic fields
3.1.1
electron source
device that generates electrons necessary for forming an electron beam in the electron optical system
3.1.1.1
energy spread
diversity of energy of electrons
3.1.1.2
effective source size
effective dimension of the electron source
3.1.2
electron emission
ejection of electrons from the surface of a material under given excitation conditions
3.1.2.1
field emission
electron emission caused by the strong electric field on and near the surface of a material
3.1.2.1.1
cold field emission
field emission in which the emission process relies purely on the high-strength electrostatic field in a
high-vacuum environment with the cathode operating at ambient temperature
3.1.2.1.2
thermal field emission
Schottky emission
field emission in which the emission process relies on both the elevated temperature of the cathode tip
and an applied electric field of high voltage in a high-vacuum environment
3.1.2.2
thermionic emission
electron emission that relies on the use of high temperature to enable electrons in the cathode to
overcome the work function energy barrier and escape into the vacuum
3.1.3
electron lens
basic component of an electron optical system, using an electrostatic and/or electromagnetic field to
change the trajectories of the electrons passing through it
3.1.3.1
electrostatic lens
electron lens employing an electrostatic field formed by a specific configuration of electrodes
3.1.3.2
electromagnetic lens
electron lens employing an electromagnetic field formed by a specific configuration of electromagnetic
coil (or permanent magnet) and pole piece
3.1.4
focusing
aiming the electrons onto a particular point using an electron lens
3.1.5
demagnification
numerical value by which the diameter of the electron beam exiting a lens is reduced in comparison to
the diameter of the electron beam entering the lens
3.2
electron scattering
electron deflection and/or its kinetic energy loss as a result of collision(s) with target atom(s) or
electron(s)
3.2.1
elastic scattering
electron scattering in which energy and momentum are conserved in the collision system
2 © ISO 2014 – All rights reserved

3.2.1.1
backscattering
electron scattering in which the incident electrons scatter backwards and out of the target after suffering
deflections
3.2.2
inelastic scattering
electron scattering in which energy and/or momentum are not conserved in the collision system
Note 1 to entry: For inelastic scattering, the electron trajectory is modified by a small angle, generally less than
0,01 rad.
3.2.3
scattering cross-section
hypothetical area normal to the incident radiation that would geometrically intercept the total amount
of radiation actually scattered by a scattering particle
Note 1 to entry: Scattering cross-section is usually expressed only as area (m ).
3.2.4
mean free path
mean distance between electron scattering events in any material
3.2.5
Bethe range
estimate of the total distance an electron can travel in any material (including vacuum and a target),
obtained by integrating the Bethe stopping power equation over the energy range from the incident
value to a low threshold value (e.g. 1 keV)
Note 1 to entry: This assumes that the electron loses energy continuously in the material rather than as occurs in
practice where energy is lost in discrete scattering events.
3.3
backscattered electron
BSE
electron ejected from the entrance surface of the specimen by the backscattering process
Note 1 to entry: By convention, an electron ejected with an energy greater than 50 eV may be considered as a
backscattered electron.
3.3.1
backscattering coefficient
BSE yield
η
ratio of the total number of backscattered electrons to the total number of incident electrons
3.3.2
BSE angular distribution
distribution of backscattered electrons as a function of their emitting angle relative to the specimen
surface normal
3.3.3
BSE atomic number dependence
variation of backscattering coefficient as a function of the atomic number of the specimen
3.3.4
BSE beam energy dependence
variation of backscattering coefficient with beam energy
3.3.5
BSE depth distribution
distribution describing the locations of the electrons at their maximum depth in the specimen before
subsequently being backscattered from the specimen surface
3.3.6
BSE energy distribution
distribution of backscattered electrons as a function of their emitting energy
3.3.7
BSE escape depth
maximum depth in a specimen from which a backscattered electron may emerge
3.3.8
BSE lateral spatial distribution
two-dimensional distribution of backscattered electrons escaping as a function of the distance from the
beam impact point to the lateral position of escape
3.4
secondary electron
electron emitted from a specimen as a result of bombardment by the primary electrons
Note 1 to entry: By convention, an electron with energy less than 50 eV is considered as a secondary electron.
3.4.1
SE yield
secondary electron coefficient
total number of secondary electrons per incident electron
3.4.2
SE angular distribution
distribution of secondary electrons as a function of their emitting angle relative to the surface normal
3.4.3
SE energy distribution
distribution of secondary electrons as a function of their emitting energy
3.4.4
SE escape depth
maximum depth under a surface from which secondary electrons are emitted
3.4.5
SE tilt dependence
effect on secondary electrons of the specimen tilt which accompanies a change in incident beam angle
3.4.6
SE (SE )
1 I
secondary electrons that are generated by the incident beam electrons within the specimen
3.4.7
SE (SE )
2 II
secondary electrons that are generated by the backscattered electrons within the specimen
3.4.8
SE (SE )
3 III
secondary electrons that are generated by the electrons backscattered from the specimen somewhere
remotely beyond the point of incidence
4 © ISO 2014 – All rights reserved

3.4.9
SE (SE )
4 IV
secondary electrons that are generated by the incident beam electrons with
...