IEC TS 62804-1:2025

IEC TS 62804-1 ®
Edition 2.0 2025-06
TECHNICAL
SPECIFICATION
Photovoltaic (PV) modules – Test methods for the detection of potential-induced
degradation –
Part 1: Crystalline silicon
ICS 27.160  ISBN 978-2-8327-0455-4

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– 2 – IEC TS 62804-1:2025 © IEC 2025
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 7
4 Samples . 7
5 Test procedures . 9
5.1 General . 9
5.2 Test for PID-shunting . 9
5.2.1 General. 9
5.2.2 Pre-stress tests . 10
5.2.3 Voltage stress test procedures . 11
5.2.4 Post-stress tests . 15
5.3 Test for PID-polarization . 16
5.3.1 General. 16
5.3.2 Pre-stress tests . 17
5.3.3 Voltage stress with irradiation test procedures . 18
5.3.4 Post-stress tests . 22
5.4 Test for PID-polarization recovery . 23
5.4.1 General. 23
5.4.2 Apparatus . 23
5.4.3 Severities . 23
5.4.4 Procedure . 24
6 Test report . 25
Annex A (informative) Benefit of electroluminescence imaging in PID testing . 27
Bibliography . 28

Figure 1 – PID test flow . 10
Figure 2 – Example test time-temperature-humidity-voltage profile for application of
stress in an environmental chamber . 14
Figure 3 – Test time-temperature-voltage profile for stress method performed in 25 °C
ambient . 15
Figure 4 – Test flow for evaluation of PID-polarization of both faces of a PV module in
both polarities . 17
Figure 5 – Example of module preparation and connection scheme for PID-polarization
testing on a framed module, illustrated here for testing on the module top face . 21
Figure 6 – Test time-temperature-voltage-irradiance profile for application of stress for
testing under irradiation . 22
Figure 7 – PID recovery test flow . 24
Figure 8 – Example test time-temperature-irradiance profile for recovery . 25
Figure A.1 – Set of three electroluminescence images of a PV module showing the
development of different contact scenarios with the glass during PID testing . 27

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
PHOTOVOLTAIC (PV) MODULES –
TEST METHODS FOR THE DETECTION
OF POTENTIAL-INDUCED DEGRADATION –

Part 1: Crystalline silicon
FOREWORD
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IEC TS 62804-1 has been prepared by IEC technical committee 82: Solar photovoltaic energy
systems. It is a Technical Specification.
This second edition cancels and replaces the first edition published in 2015. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) A procedure specifically for measuring PID-polarization was added.
b) A procedure specifically for measuring the extent of recovery of PID-polarization was added.

– 4 – IEC TS 62804-1:2025 © IEC 2025
The text of this Technical Specification is based on the following documents:
Draft Report on voting
82/2366/DTS 82/2424/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 62804 series, published under the general title Photovoltaic (PV)
modules – Test methods for the detection of potential-induced degradation, can be found on
the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn, or
• revised.
INTRODUCTION
This part of IEC TS 62804 is for testing and measuring the resistance of crystalline silicon
photovoltaic (PV) modules to stresses that cause potential-induced degradation (PID). The
applied stresses, mainly system voltage, manifest in different degradation mechanisms
depending on the module technology. A series of Technical Specifications is therefore
developed to establish tests for measuring PID in different photovoltaic module technologies.
IEC TS 62804-1 defines test methods for measuring PID in crystalline silicon PV modules.
IEC TS 62804-1-1 defines test methods for measuring PID delamination in crystalline silicon
PV modules.
IEC TS 62804-2 defines test methods for measuring PID in thin-film PV modules.
Additional Technical Specifications in the series may be introduced in the future for emerging
module technologies or related degradation modes.
Voltage potential that exists between the active circuit and the grounded module surfaces can
lead to module degradation by multiple mechanisms including ionic transport in the encapsulant,
superstrate, or substrate, hot carriers in the cell, redistribution of charges that degrade the
active layer of the cell or its surfaces, failure of adhesion at interfaces, and corrosion of module
components. These degradation mechanisms in crystalline silicon photovoltaic modules caused
by voltage stress and promoted by high temperature and humidity include potential-induced
degradation, polarization, electrolytic corrosion, and electrochemical corrosion. They are most
active in wet or damp environments,
...