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ASTM F613-93

(Test Method)

Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)

Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)

SCOPE
1.1 This test method covers measurement of the diameter of silicon wafers up to 205 mm in diameter. Other semiconductor materials with a circular shape can also be measured.  
1.2 This test method is independent of surface finish and may be performed on edge-contoured specimens.  
1.3 This test method is to be carried out at a temperature of 23 + 5°C.  
1.4 This test method was developed for use with silicon wafers with standard diameters as given in SEMI Specifications M1, and may be used for wafers of other diameter or materials within the specified limit, provided suitable gage blocks are available and standard flat configurations are used.  
1.5 This test method is intended for use as a referee method.  
1.6 Roundness is not measured by this method.  
1.7 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.  
1.8 For wafers of diameter 3 in. or smaller, the values stated in inch-pound units are to be regarded as standard; the values stated in acceptable metric units in parentheses are for information only. For wafers of diameter larger than 3 in., the values stated in acceptable metric units are to be regarded as standard whether or not they appear with parentheses; inch-pound units are for information only.

General Information

Status
Withdrawn
Publication Date
31-Dec-1992
Withdrawal Date
09-Jun-2001
ICS
77.040.01 - Testing of metals in general
Technical Committee
F01 - Electronics
Current Stage
Ref Project

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ASTM F613-93 - Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)ASTM F613-93 - Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)
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ASTM F613-93 - Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)
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Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or
withdrawn. Contact ASTM International (www.astm.org) for the latest information.
Designation: F 613 – 93
AMERICAN SOCIETY FOR TESTING AND MATERIALS
100 Barr Harbor Dr., West Conshohocken, PA 19428
Reprinted from the Annual Book of ASTM Standards. Copyright ASTM
Standard Test Method for
1
Measuring Diameter of Semiconductor Wafers
This standard is issued under the fixed designation F 613; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope Specifications M 1, Polished Monocrystalline Silicon Wa-
fers
1.1 This test method covers measurement of the diameter of
silicon wafers up to 205 mm in diameter. Other semiconductor
3. Terminology
materials with a circular shape can also be measured.
3.1 Definitions of Terms Specific to This Standard:
1.2 This test method is independent of surface finish and
3.1.1 diameter—of a semiconductor wafer, the linear di-
may be performed on edge-contoured specimens.
mension across the surface of a circular wafer that contains the
1.3 This test method is to be carried out at a temperature of
wafer center and excludes flats or other peripheral fiduciary
23 6 5°C.
geometries.
1.4 This test method was developed for use with silicon
3.1.2 indent—of a semiconductor wafer, an edge defect that
wafers with standard diameters as given in SEMI Specifica-
extends from the front surface to the back surface.
tions M1, and may be used for wafers of other diameter or
materials within the specified limit, provided suitable gage
4. Summary of Test Method
blocks are available and standard flat configurations are used.
4.1 A specimen wafer is placed in a fixture on the stage of
1.5 This test method is intended for use as a referee method.
an optical comparator.
1.6 Roundness is not measured by this method.
4.2 The specimen is moved through the illuminating beam
1.7 This standard does not purport to address all of the
in a manner so that first one specimen edge and then the
safety problems, if any, associated with its use. It is the
opposite edge are brought into coincidence with a reference
responsibility of the user of this standard to establish appro-
line; the stage translation required is measured by means of a
priate safety and health practices and determine the applica-
micrometer head assembly and gage blocks. Three such
bility of regulatory limitations prior to use.
diametral traverses are made along specific diameters.
1.8 For wafers of diameter 3 in. or smaller, the values stated
4.3 Mean diameter and diameter variation are calculated.
in inch-pound units are to be regarded as standard; the values
stated in acceptable metric units in parentheses are for infor- 5. Significance and Use
mation only. For wafers of diameter larger than 3 in., the values
5.1 The diameter of semiconductor wafers is an important
stated in acceptable metric units are to be regarded as standard
parameter in microelectronic fabrication, especially for pro-
whether or not they appear with parentheses; inch-pound units
cessing steps requiring wafer fixturing. Wafer diameter must
are for information only.
conform to the limits specified in SEMI Specifications M 1 or
other agreed upon limits, or the product that is otherwise
2. Referenced Documents
suitable may not fit correctly in process equipment.
5.2 This test method is suitable in principle for use as an
2.1 ASTM Standards:
2
E 1 Specification for ASTM Thermometers incoming quality acceptance test for generating data on diam-
3
eter variation. Frequently, incoming inspection tests are of a
2.2 Federal Standard:
pass-fail nature; however, in fail situations this test method
Fed. Std. No. GGG-G-15C Specification for Gage Blocks
provides supportive data for a final disposition.
and Accessories (Inch and Metric)
4
5.3 Wafers cut from a perfectly round crystal can have
2.3 SEMI Standard:
off-axis crystallographic orientation requirements which may
result in elliptically shaped wafers. This test method reports the
1
This test method is under the jurisdiction of ASTM Committee F-1 on range of three diameters for each wafer measured.
Electronics and is the direct responsibility of Subcommittee F01.06 on Silicon
Materials and Process Control.
6. Interferences
Current edition approved Aug. 15, 1993. Published October 1993. Originally
6.1 If a traverse from one edge of the specimen to the other
published as F 613 – 79. Last previous edition F 613 – 87.
2
Annual Book of ASTM Standards, Vol 14.03.
is intended to be a traverse along a true wafer diameter, but is
3
Available from Standardization Documents Order Desk, Bldg. 4 Section D, 700
in fact taken along a lesser chord or is interrupted by a flat,
Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS.
4
other fi
...

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SCOPE
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1.2.1 The alloying additions chromium, nickel, and molybdenum (if specified in alloy, as in type 316L),  
1.2.2 The minor elements and residuals manganese, silicon, copper, cobalt, and stabilizers such as titanium and columbium (niobium), if present,  
1.2.3 Carbon, sulfur and phosphorus,  
1.2.4 Nitrogen and oxygen gases,  
1.2.5 Any additional minor element additions that may be made as part of the melting and casting practice, such as aluminum and calcium,  
1.2.6 Available standard analytical and reporting techniques are described for these elements.  
1.3 Metallurgical characteristics to be analyzed and reported are inclusion contents, grain structure, mechanical properties, and intergranular corrosion susceptibility.  
1.4 Limitations:  
1.4.1 This guide is limited to corrosion resistant metal alloys of the general class stated in the Scope.  
1.4.2 The test methods cited in this guide are not intended to preclude the use of other generally accepted techniques of demonstrated equivalent or superior precision and bias.  
1.4.3 Inclusion of testing and analysis procedures for any given element or metallurgical characteristic in this guide is not to be construed as being a requirement for incorporation of that element or metallurgical characteristic into any specifications.  
1.5 The values stated in SI units are to be regarded as the standard. The inch-pound units given in parentheses are for information only.  
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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