ASTM E1162-11(2019)
(Practice)Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
SIGNIFICANCE AND USE
5.1 This practice is used for reporting the experimental conditions as specified in Section 6 in the “Methods” or “Experimental” sections of other publications (subject to editorial restrictions).
5.2 The report would include specific conditions for each data set, particularly, if any parameters are changed for different sputter depth profile data sets in a publication. For example, footnotes of tables or figure captions would be used to specify differing conditions.
SCOPE
1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).2
1.2 Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded.
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.
1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
General Information
- Status
- Published
- Publication Date
- 31-Oct-2019
- Technical Committee
- E42 - Surface Analysis
- Drafting Committee
- E42.06 - SIMS
Relations
- Effective Date
- 01-Nov-2019
- Effective Date
- 01-Dec-2003
- Effective Date
- 10-Dec-2002
- Effective Date
- 10-Nov-2001
- Effective Date
- 10-Nov-2001
Overview
ASTM E1162-11(2019): Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS) provides comprehensive guidelines for documenting and sharing sputter depth profile results obtained using SIMS. Developed by ASTM International, this standard ensures consistent reporting of experimental conditions, instrument parameters, and data analysis techniques. Adhering to this practice enables accurate interpretation, reliable comparison, and effective reproducibility of SIMS depth profiling data across academic, industrial, and research settings. The standard is recognized internationally, aligning with WTO principles for global harmonization.
Key Topics
This standard outlines essential elements to report in any SIMS sputter depth profiling study:
Instrumentation Details
- Manufacturer, model, and type of SIMS system and analyzer (e.g., magnetic sector, time-of-flight)
- Accessories relevant to the experiment (e.g., specimen stage, ion source, vacuum pumps)
- Specifics for nonstandard components or custom setups
Specimen Information
- Full description including composition, pre-analysis history, physical dimensions, dopants, and contaminants
- Mounting, positioning, and any preparatory treatments such as heating, cooling, or charge compensation
Experimental Conditions
- Primary ion source settings: composition, energy, current, incident angle, beam diameter, raster rate
- Mass spectrometer parameters: analyzed area, collection angle, energy bandpass, mass resolution, alignment
- Details on beam pulsing, charge compensation, and use of reactive gases or vacuum conditions
Data Measurement and Quantification
- Detector type, time constant or pulse pair resolution, and correction for saturated detectors
- Data reduction procedures for quantifying elemental concentrations and calibrating depth scales
- Use of reference materials, sensitivity factors, and reporting of analytical precision
Results Display and Reporting
- Clear axes labels for depth profiles, including ion intensity and sputtering time or fluence
- Indication of any parameter changes during analysis in figure captions or table footnotes
Applications
The practical value of ASTM E1162-11(2019) lies in its ability to:
- Enhance Data Comparability: By standardizing how SIMS sputter depth profiles are reported, results from different laboratories or publications can be more directly compared and validated.
- Improve Scientific Reproducibility: Detailed reporting allows other researchers or quality assurance teams to accurately replicate experimental conditions and verify findings.
- Support Quality Control in Industry: Materials characterization, impurity profiling, and process monitoring in semiconductor manufacturing and advanced materials rely on rigorous SIMS data documentation.
- Facilitate Method Development: Developers of new analytical techniques can benchmark or improve methods based on clearly presented SIMS data following this standard.
Related Standards
Several related ASTM standards and documents support or complement ASTM E1162-11(2019):
- ASTM E673 - Terminology Relating to Surface Analysis (for consistency in definitions)
- International Surface Analysis Standards - For practices on calibration, quality control, and other analytical techniques
- WTO TBT Principles - Ensuring international recognition and regulatory alignment
Researchers, analysts, and quality professionals using SIMS for sputter depth profiling should implement ASTM E1162-11(2019) to ensure precise, complete, and credible communication of their experimental data. For more information, visit ASTM International.
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Frequently Asked Questions
ASTM E1162-11(2019) is a standard published by ASTM International. Its full title is "Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)". This standard covers: SIGNIFICANCE AND USE 5.1 This practice is used for reporting the experimental conditions as specified in Section 6 in the “Methods” or “Experimental” sections of other publications (subject to editorial restrictions). 5.2 The report would include specific conditions for each data set, particularly, if any parameters are changed for different sputter depth profile data sets in a publication. For example, footnotes of tables or figure captions would be used to specify differing conditions. SCOPE 1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).2 1.2 Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded. 1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
SIGNIFICANCE AND USE 5.1 This practice is used for reporting the experimental conditions as specified in Section 6 in the “Methods” or “Experimental” sections of other publications (subject to editorial restrictions). 5.2 The report would include specific conditions for each data set, particularly, if any parameters are changed for different sputter depth profile data sets in a publication. For example, footnotes of tables or figure captions would be used to specify differing conditions. SCOPE 1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).2 1.2 Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded. 1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
ASTM E1162-11(2019) is classified under the following ICS (International Classification for Standards) categories: 71.040.50 - Physicochemical methods of analysis. The ICS classification helps identify the subject area and facilitates finding related standards.
ASTM E1162-11(2019) has the following relationships with other standards: It is inter standard links to ASTM E1162-11, ASTM E673-03, ASTM E673-02a, ASTM E673-01, ASTM E673-98E1. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.
ASTM E1162-11(2019) is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.
Standards Content (Sample)
This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the
Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
Designation: E1162 −11 (Reapproved 2019)
Standard Practice for
Reporting Sputter Depth Profile Data in Secondary Ion Mass
Spectrometry (SIMS)
This standard is issued under the fixed designation E1162; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope E673TerminologyRelatingtoSurfaceAnalysis(Withdrawn
2012)
1.1 This practice covers the information needed to describe
andreportinstrumentation,specimenparameters,experimental
3. Terminology
conditions, and data reduction procedures. SIMS sputter depth
3.1 For definitions of terms used in this practice, see
profiles can be obtained using a wide variety of primary beam
Terminology E673.
excitation conditions, mass analysis, data acquisition, and
processing techniques (1-4).
4. Summary of Practice
1.2 Limitations—This practice is limited to conventional
4.1 Experimental conditions and variables that affect SIMS
sputterdepthprofilesinwhichinformationisaveragedoverthe
sputter depth profiles (1-4) and tabulated raw data (where
analyzed area in the plane of the specimen. Ion microprobe or
feasible) are reported to facilitate comparisons to other labo-
microscope techniques permitting lateral spatial resolution of
ratories or specimens, and to results of other analytical tech-
secondary ions within the analyzed area, for example, image
niques.
depth profiling, are excluded.
5. Significance and Use
1.3 The values stated in SI units are to be regarded as
standard. No other units of measurement are included in this
5.1 This practice is used for reporting the experimental
standard.
conditions as specified in Section 6 in the “Methods” or
“Experimental” sections of other publications (subject to
1.4 This standard does not purport to address all of the
editorial restrictions).
safety concerns, if any, associated with its use. It is the
responsibility of the user of this standard to establish appro-
5.2 The report would include specific conditions for each
priate safety, health, and environmental practices and deter-
data set, particularly, if any parameters are changed for
mine the applicability of regulatory limitations prior to use.
different sputter depth profile data sets in a publication. For
1.5 This international standard was developed in accor-
example, footnotes of tables or figure captions would be used
dance with internationally recognized principles on standard-
to specify differing conditions.
ization established in the Decision on Principles for the
Development of International Standards, Guides and Recom- 6. Information to Be Reported
mendations issued by the World Trade Organization Technical
6.1 Instrumentation:
Barriers to Trade (TBT) Committee.
6.1.1 IfastandardcommercialSIMSsystemisused,specify
the manufacturer and instrument model number and type of
2. Referenced Documents
analyzer, such as, magnetic sector, quadrupole, time-of-flight,
and so forth. Specify, the model numbers and manufacturer of
2.1 ASTM Standards:
any accessory or auxiliary equipment relevant to the depth
profiling study (for example, special specimen stage, primary
mass filter, primary ion source, electron flood gun, vacuum
This practice is under the jurisdiction of ASTM Committee E42 on Surface
pumps, data acquisition system, and source of software, etc.).
Analysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.
Current edition approved Nov. 1, 2019. Published November 2019. Originally 6.1.2 If a nonstandard commercial SIMS system is used,
approved in 1987. Last previous edition approved in 2011 as E1162–11. DOI:
specify the manufacturer and model numbers of components
10.1520/E1162-11R19.
(for example, primary ion source, mass analyzer, data system,
The boldface numbers in parentheses refer to the references at the end of this
and accessory equipment).
standard.
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
Standards volume information, refer to the standard’s Document Summary page on The last approved version of this historical standard is referenced on
the ASTM website. www.astm.org.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
E1162 − 11 (2019)
6.2 Specimen: used for each measurement of each ion of interest. For analog
detection, give the detector system time constant. For pulse
6.2.1 Describe the specimen as completely as possible. For
counting detection, give the pulse pair resolution including
example, specify its bulk composition, preanalysis history,
dead time corrections. For rapidly rastered primary beams,
physical dimensions. If the specimen contains dopants, for
correct intensities (counts/second) to instantaneous values by
example, semiconductors, report the dopant type and concen-
multiplying by the ratio of total sputtered area to the analyzed
tration. For multicomponent specimens, state the degree of
area (important procedure to help assess possible detector
specimen homogeneity. Describe any known contaminants.
saturation limitations (5)).
6.2.2 State the method of mounting and positioning the
specimen for analysis. Specify any physical treatment of the 6.3.4 Vacuum—Specify pressures in the primary column,
specimenmountedintheSIMSanalysischamber(forexample, specimen chamber and mass spectrometer prior to and during
heated, cooled, electron bombarded, and so forth). Note the sputterdepthprofiling,includingthetypeofvacuumpumping.
specimen potential relative to ground. Describe the method of Also give the composition of the residual gas, if available. If
specimen charge compensation used (if any), for example, flooding of the sample surface region or backfilling of the
conductive coatings or grid, electron flooding, etc. analysis chamber with reactive gases (for example, oxygen) is
used give the details of the procedure including the partial
6.3 Experimental Conditions:
pressure of the reactive gas.
6.3.1 Primary Ion Source—Give the following parameters
wheneverpossible:Compositionofbeam(ifmassfiltered,give 6.4 Quantification by Data Reduction:
16 −
the specific ion and isotope, for example, O ); angle of
6.4.1 Concentrations—If any elemental concentrations are
incidence (relative to the surface normal); ion beam energy;
presented,stateclearlythemethodologyusedforquantification
charge state and polarity; current (including the method used
(6 and 7). In addition, specify the details of any external or
for measurement, for example, Faraday cup); beam diameter
internal standards used including methods for normalization in
(including the method used for measurement); size and shape
comparing ion intensities in reference materials to ion
...




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