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ASTM E1162-06

(Practice)

Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)

Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)

SIGNIFICANCE AND USE
This practice is used for reporting the experimental conditions as specified in Section 6 in the “Methods” or “Experimental” sections of other publications (subject to editorial restrictions).
The report would include specific conditions for each data set, particularly, if any parameters are changed for different sputter depth profile data sets in a publication. For example, footnotes of tables or figure captions would be used to specify differing conditions.
SCOPE
1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).
1.2 Limitations This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded.
This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Historical
Publication Date
31-Oct-2006
ICS
71.040.50 - Physicochemical methods of analysis
Technical Committee
E42 - Surface Analysis
Drafting Committee
E42.06 - SIMS
Current Stage
Ref Project

Relations

Replaces
ASTM E1162-87(2001) - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
Effective Date
01-Nov-2006
Replaced By
ASTM E1162-11 - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
Effective Date
01-Nov-2011

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ASTM E1162-06 - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)ASTM E1162-06 - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
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ASTM E1162-06 - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
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NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: E1162 – 06
Standard Practice for
Reporting Sputter Depth Profile Data in Secondary Ion Mass
1
Spectrometry (SIMS)
This standard is issued under the fixed designation E1162; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 5. Significance and Use
1.1 This practice covers the information needed to describe 5.1 This practice is used for reporting the experimental
andreportinstrumentation,specimenparameters,experimental conditions as specified in Section 6 in the “Methods” or
conditions, and data reduction procedures. SIMS sputter depth “Experimental” sections of other publications (subject to
profiles can be obtained using a wide variety of primary beam editorial restrictions).
excitation conditions, mass analysis, data acquisition, and 5.2 The report would include specific conditions for each
2
processing techniques (1-4). data set, particularly, if any parameters are changed for
1.2 Limitations—This practice is limited to conventional different sputter depth profile data sets in a publication. For
sputterdepthprofilesinwhichinformationisaveragedoverthe example, footnotes of tables or figure captions would be used
analyzed area in the plane of the specimen. Ion microprobe or to specify differing conditions.
microscope techniques permitting lateral spatial resolution of
6. Information to Be Reported
secondary ions within the analyzed area, for example, image
6.1 Instrumentation:
depth profiling, are excluded.
1.3 This standard does not purport to address all of the 6.1.1 IfastandardcommercialSIMSsystemisused,specify
the manufacturer and instrument model number and type of
safety concerns, if any, associated with its use. It is the
responsibility of the user of this standard to establish appro- analyzer, such as, magnetic sector, quadrupole, time-of-flight,
and so forth. Specify, the model numbers and manufacturer of
priate safety and health practices and determine the applica-
bility of regulatory limitations prior to use. any accessory or auxiliary equipment relevant to the depth
profiling study (for example, special specimen stage, primary
2. Referenced Documents
mass filter, primary ion source, electron flood gun, vacuum
3
2.1 ASTM Standards: pumps, data acquisition system, and source of software, etc.).
E673 Terminology Relating to Surface Analysis 6.1.2 If a nonstandard commercial SIMS system is used,
specify the manufacturer and model numbers of components
3. Terminology
(for example, primary ion source, mass analyzer, data system,
3.1 For definitions of terms used in this practice, see and accessory equipment).
Terminology E673.
6.2 Specimen:
6.2.1 Describe the specimen as completely as possible. For
4. Summary of Practice
example, specify its bulk composition, preanalysis history,
4.1 Experimental conditions and variables that affect SIMS
physical dimensions. If the specimen contains dopants, for
sputter depth profiles (1-4) and tabulated raw data (where
example, semiconductors, report the dopant type and concen-
feasible) are reported to facilitate comparisons to other labo-
tration. For multicomponent specimens, state the degree of
ratories or specimens, and to results of other analytical tech-
specimen homogeneity. Describe any known contaminants.
niques.
6.2.2 State the method of mounting and positioning the
specimen for analysis. Specify any physical treatment of the
1 specimenmountedintheSIMSanalysischamber(forexample,
This practice is under the jurisdiction of ASTM Committee E42 on Surface
heated, cooled, electron bombarded, and so forth). Note the
Analysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.
Current edition approved Nov. 1, 2006. Published November 2006. Originally
specimen potential relative to ground. Describe the method of
approved in 1987. Last previous edition approved in 2001 as E1162–87(2001).
specimen charge compensation used (if any), for example,
DOI: 10.1520/E1162-06.
2
conductive coatings or grid, electron flooding, etc.
The boldface numbers in parentheses refer to the references at the end of this
standard. 6.3 Experimental Conditions:
3
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
6.3.1 Primary Ion Source—Give the following parameters
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
whenever possible: Composition (if mass filtered, give the
Standards volume information, refer to the standard’s Document Summary page on
16 −
specific ion and isotope, for example, O ); angle of incidence
the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 1
...

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1.1 This practice describes methods for determining the specimen area contributing to the detected signal in Auger electron spectrometers and some types of X-ray photoelectron spectrometers (spectrometer analysis area) when this area is defined by the electron collection lens and aperture system of the electron energy analyzer. The practice is applicable only to those X-ray photoelectron spectrometers in which the specimen area excited by the incident X-ray beam is larger than the specimen area viewed by the analyzer, in which the photoelectrons travel in a field-free region from the specimen to the analyzer entrance. Some of the methods described here require an auxiliary electron gun mounted to produce an electron beam of variable energy on the specimen (“electron-gun method”). Other experiments require a sample with a sharp edge, such as a wafer covered with a uniform clean layer (for example, gold (Au) or silver (Ag)) and cleaved to obtain a long side (“sharp-edge method”).  
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Standard Practice for Pulse Counting System Dead Time Determination by Measuring Isotopic Ratios with SIMS

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5.1 Electron multipliers are commonly used in pulse-counting mode to detect ions from magnetic sector mass spectrometers. The electronics used to amplify, detect and count pulses from the electron multipliers always have a characteristic time interval after the detection of a pulse, during which no other pulses can be counted. This characteristic time interval is known as the “dead time.” The dead time has the effect of reducing the measured count rate compared with the “true” count rate.  
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SCOPE
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