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ASTM E1162-87(2001)

(Practice)

Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)

Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)

SCOPE
1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).
1.2 Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Historical
Publication Date
23-Apr-1987
ICS
71.040.50 - Physicochemical methods of analysis
Technical Committee
E42 - Surface Analysis
Drafting Committee
E42.06 - SIMS
Current Stage
Ref Project

Relations

Replaces
ASTM E1162-87(1996) - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
Effective Date
24-Apr-1987
Replaced By
ASTM E1162-06 - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
Effective Date
01-Nov-2006

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ASTM E1162-87(2001) - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)ASTM E1162-87(2001) - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
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ASTM E1162-87(2001) - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
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NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: E 1162 – 87 (Reapproved 2001)
Standard Practice for
Reporting Sputter Depth Profile Data in Secondary Ion Mass
Spectrometry (SIMS)
This standard is issued under the fixed designation E1162; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope 5. Significance and Use
1.1 This practice covers the information needed to describe 5.1 This practice is used for reporting the experimental
andreportinstrumentation,specimenparameters,experimental conditions as specified in Section 6 in the “Methods” or
conditions, and data reduction procedures. SIMS sputter depth “Experimental” sections of other publications (subject to
profiles can be obtained using a wide variety of primary beam editorial restrictions).
excitation conditions, mass analysis, data acquisition, and 5.2 The report would include specific conditions for each
processing techniques (1-4). data set, particularly, if any parameters are changed for
1.2 Limitations—This practice is limited to conventional different sputter depth profile data sets in a publication. For
sputterdepthprofilesinwhichinformationisaveragedoverthe example, footnotes of tables or figure captions would be used
analyzed area in the plane of the specimen. Ion microprobe or to specify differing conditions.
microscope techniques permitting lateral spatial resolution of
6. Information to Be Reported
secondary ions within the analyzed area, for example, image
6.1 Instrumentation:
depth profiling, are excluded.
1.3 This standard does not purport to address all of the 6.1.1 IfastandardcommercialSIMSsystemisused,specify
the manufacturer and instrument model number. Specify, the
safety concerns, if any, associated with its use. It is the
responsibility of the user of this standard to establish appro- modelnumbersandmanufacturerofanyaccessoryorauxiliary
equipment relevant to the depth profiling study (for example,
priate safety and health practices and determine the applica-
bility of regulatory limitations prior to use. specialspecimenstage,primarymassfilter,electron flood gun,
vacuum pumps, data acquisition system, and source of soft-
2. Referenced Documents
ware, etc.).
2.1 ASTM Standards: 6.1.2 If a nonstandard commercial SIMS system is used,
E673 Terminology Relating to Surface Analysis specify the manufacturer and model numbers of components
(for example, primary ion source, mass analyzer, data system,
3. Terminology
and accessory equipment).
3.1 For definitions of terms used in this practice, see
6.2 Specimen:
Terminology E673. 6.2.1 Describe the specimen as completely as possible. For
example, specify its bulk composition, preanalysis history,
4. Summary of Practice
physical dimensions. If the specimen contains dopants, for
4.1 Experimental conditions and variables that affect SIMS
example, semiconductors, report the dopant type and concen-
sputter depth profiles (1-4) and tabulated raw data (where
tration. For multicomponent specimens, state the degree of
feasible) are reported to facilitate comparisons to other labo-
specimen homogeneity.
ratories or specimens, and to results of other analytical tech-
6.2.2 State the method of mounting and positioning the
niques.
specimen for analysis. Specify any physical treatment of the
specimenmountedintheSIMSanalysischamber(forexample,
heated, cooled, electron bombarded, etc.). Note the specimen
This practice is under the jurisdiction of ASTM Committee E42 on Surface
potential relative to ground. Describe the method of specimen
Analysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.
Current edition approved April 24, 1987. Published June 1987.
charge compensation used (if any), for example, conductive
The boldface numbers in parentheses refer to the references at the end of this
coatings or grid, electron flooding, etc.
standard.
3 6.3 Experimental Conditions:
Annual Book of ASTM Standards, Vol 03.06.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
E 1162
6.3.1 Primary Ion Source—Give the following parameters analysis chamber with reactive gases (for example, oxygen) is
whenever possible: Composition (if mass filtered, give the used give the details of the procedure including the partial
16 −
specific ion and isotope, for example, O ); angle of incidence pressure of the reactive gas.
(relative to the surface normal); ion beam energy; current
6.4 Quantification by Data Reduction:
(including the method used for measurement, for example,
6.4.1 Concentrations—If any elemental concentrations are
Faraday cup); beam diameter (including the method used for
presented,stateclearlythemethodologyusedforquantification
measurement); size and shape of sputtered area; primary beam
(5 and 6). In addition, specify the nature of any external or
current density for a stationary beam (A/m ); beam raster size
internal standards used including methods for normalization in
and rate (if used); primary ion dose rate averaged over the
comparing ion intensities in standards to ion intensities in
sputtered area (ions/m ·s).
specimen depth profiles. Specify standards made by ion im-
6.3.2 Secondary Ion Mass Spectrometer—Give the follow-
plantation according to ion species, dose, energy, matrix, and
ing parameters whenever possible: analyzed area versus total
reference da
...

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Standard Practice for Pulse Counting System Dead Time Determination by Measuring Isotopic Ratios with SIMS

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5.1 Electron multipliers are commonly used in pulse-counting mode to detect ions from magnetic sector mass spectrometers. The electronics used to amplify, detect and count pulses from the electron multipliers always have a characteristic time interval after the detection of a pulse, during which no other pulses can be counted. This characteristic time interval is known as the “dead time.” The dead time has the effect of reducing the measured count rate compared with the “true” count rate.  
5.2 In order to measure count rates accurately over the entire dynamic range of a pulse counting detector, such as an electron multiplier, the dead time of the entire pulse counting system must be well known. Accurate count rate measurement forms the basis of isotopic ratio measurements as well as elemental abundance determinations.  
5.3 The procedure described herein has been successfully used to determine the dead time of counting systems on SIMS instruments.6 The accurate determination of the dead time by this method has been a key component of precision isotopic ratio measurements made by SIMS.
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1.1 This practice provides the Secondary Ion Mass Spectrometry (SIMS) analyst with a method for determining the dead time of the pulse-counting detection systems on the instrument. This practice also allows the analyst to determine whether the apparent dead time is independent of count rate.  
1.2 This practice is applicable to most types of mass spectrometers that have pulse-counting detectors.  
1.3 This practice does not describe methods for precise or accurate isotopic ratio measurements.  
1.4 This practice does not describe methods for the proper operation of pulse counting systems and detectors for mass spectrometry.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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